Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for t...

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Veröffentlicht in:	International journal of microwave and wireless technologies 2010-02, Vol.2 (1), p.115-120
Hauptverfasser:	Kühn, Jutta, Musser, Markus, van Raay, Friedbert, Kiefer, Rudolf, Seelmann-Eggebert, Matthias, Mikulla, Michael, Quay, Rüdiger, Rödle, Thomas, Ambacher, Oliver
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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