Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for t...
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| Veröffentlicht in: | International journal of microwave and wireless technologies 2010-02, Vol.2 (1), p.115-120 |
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| container_title | International journal of microwave and wireless technologies |
| container_volume | 2 |
| creator | Kühn, Jutta Musser, Markus van Raay, Friedbert Kiefer, Rudolf Seelmann-Eggebert, Matthias Mikulla, Michael Quay, Rüdiger Rödle, Thomas Ambacher, Oliver |
| description | The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology. |
| doi_str_mv | 10.1017/S175907871000019X |
| format | Article |
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Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. 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| source | Cambridge University Press Journals Complete |
| title | Design and realization of GaN RF-devices and circuits from 1 to 30 GHz |
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