A flexible memory with low-voltage and high-operation speed using an Al2O3/poly(α-methylstyrene) gate stack on a muscovite substrate

Flexible organic field effect transistors (OFETs) are a promising class of flexible nonvolatile memories. However, fabrication of flexible OFET devices that offer low-voltage and high-speed operation remains a challenge. Here, we report a flexible OFET memory unit based on a novel gate stack consist...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019-02, Vol.7 (7), p.1913-1918
Hauptverfasser:	He, Huixin, Waner He, Mai, Jiaying, Wang, Jiali, Zou, Zhengmiao, Wang, Dao, Feng, Jiajun, Zhang, Aihua, Fan, Zhen, Wu, Sujuan, Zeng, Min, Gao, Jinwei, Zhou, Guofu, Lu, Xubing, J-M, Liu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Bending machines Electric potential Endurance Field effect transistors Gold High speed Mechanical properties Mica Muscovite Semiconductor devices Substrates
Online-Zugang:	Volltext
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