Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy

Ion implantation has been widely used in various device fabrication applications, including that of optoelectronic components. Focused Ion Beam (FIB) is an especially versatile implantation method, since it can be used for well controlled doping with sub-micron spatial precision. Here, we report FIB...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2019-03, Vol.125 (3), p.1-6, Article 181
Hauptverfasser:	Deshpande, Preeti, Vilayurganapathy, Subramanian, Bhat, K. N., Ghosh, Ambarish
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphization Amorphous silicon Applied physics Channeling Characterization and Evaluation of Materials Condensed Matter Physics Diodes Doping Gallium Ion beams Ion implantation Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Optoelectronic devices P-n junctions Physics Physics and Astronomy Processes Properties (attributes) Radiation damage Radiation effects Raman spectroscopy Reflectance Spectrum analysis Surfaces and Interfaces Thin Films X ray photoelectron spectroscopy
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!