Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy
Ion implantation has been widely used in various device fabrication applications, including that of optoelectronic components. Focused Ion Beam (FIB) is an especially versatile implantation method, since it can be used for well controlled doping with sub-micron spatial precision. Here, we report FIB...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2019-03, Vol.125 (3), p.1-6, Article 181 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Deshpande, Preeti Vilayurganapathy, Subramanian Bhat, K. N. Ghosh, Ambarish |
| description | Ion implantation has been widely used in various device fabrication applications, including that of optoelectronic components. Focused Ion Beam (FIB) is an especially versatile implantation method, since it can be used for well controlled doping with sub-micron spatial precision. Here, we report FIB induced gallium doping in micrometer-sized regions on shallow Silicon p-n junction devices and its effect on the device optoelectronic properties investigated through micro-spectroscopic measurements. The effect of varying dose levels has been quantified in terms of photo voltage, Raman spectroscopy, XPS and reflectance measurements to investigate the effect of radiation damage and surface amorphization. Based on these observations we report simultaneous occurrence of two scenarios, channeling of high-energy gallium ions beyond the junction depth, as well as formation of an amorphous silicon layer, which cumulatively degrade the optoelectronic properties of the diodes. |
| doi_str_mv | 10.1007/s00339-019-2467-2 |
| format | Article |
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The effect of varying dose levels has been quantified in terms of photo voltage, Raman spectroscopy, XPS and reflectance measurements to investigate the effect of radiation damage and surface amorphization. Based on these observations we report simultaneous occurrence of two scenarios, channeling of high-energy gallium ions beyond the junction depth, as well as formation of an amorphous silicon layer, which cumulatively degrade the optoelectronic properties of the diodes.</description><subject>Amorphization</subject><subject>Amorphous silicon</subject><subject>Applied physics</subject><subject>Channeling</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Diodes</subject><subject>Doping</subject><subject>Gallium</subject><subject>Ion beams</subject><subject>Ion implantation</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><subject>P-n junctions</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Properties (attributes)</subject><subject>Radiation damage</subject><subject>Radiation effects</subject><subject>Raman spectroscopy</subject><subject>Reflectance</subject><subject>Spectrum analysis</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>X ray photoelectron spectroscopy</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEQxYMoWKsfwFvAo0QzSTbrepOiVSh4qJ5Dmj8lpd2sSXrotzd1BU_OZZjhvZnHD6FroHdAaXufKeW8IxQ6woRsCTtBExCcESo5PUUT2omWPPBOnqOLnDe0lmBsguyy7O0BR4_n-haH3bDVfdElxB6HHi8DtiFalx-x896Zgus-DiW6bR1S7IPBQ4qDSyW4jPc59Gu8CyZFkocfRTZxOFyiM6-32V399in6fHn-mL2Sxfv8bfa0IIaDLAQabXRnrG0E8xYMA955aFaCmwY8QCO9ZA04t2ICtJc1km6E9ZKunG-d4FN0M96tmb72Lhe1ifvU15eKQdu1HWWUVRWMqhoz5-S8GlLY6XRQQNURphphqgpTHWGqo4eNnly1_dqlv8v_m74BWcd49Q</recordid><startdate>20190301</startdate><enddate>20190301</enddate><creator>Deshpande, Preeti</creator><creator>Vilayurganapathy, Subramanian</creator><creator>Bhat, K. 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| subjects | Amorphization Amorphous silicon Applied physics Channeling Characterization and Evaluation of Materials Condensed Matter Physics Diodes Doping Gallium Ion beams Ion implantation Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Optoelectronic devices P-n junctions Physics Physics and Astronomy Processes Properties (attributes) Radiation damage Radiation effects Raman spectroscopy Reflectance Spectrum analysis Surfaces and Interfaces Thin Films X ray photoelectron spectroscopy |
| title | Study of Ga+ implantation in Si diodes: effect on optoelectronic properties using micro-spectroscopy |
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