Preparation of Highly Oriented Aluminum Nitride Thin Films on Polycrystalline Substrates by Helicon Plasma Sputtering and Annealing

Highly c‐axis‐oriented aluminum nitride (AlN) thin films were prepared on polycrystalline Si3N4 and SiC substrates by helicon plasma sputtering. The difference in the substrate materials scarcely influenced the crystal structures of the films. The full width at half‐maximum (FWHM) of the X‐ray rocki...

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Veröffentlicht in:	Journal of the American Ceramic Society 2001-09, Vol.84 (9), p.1917-1920
Hauptverfasser:	Akiyama, Morito, Xu, Chao-Nan, Kodama, Masaya, Usui, Ichiro, Nonaka, Kazuhiro, Watanabe, Tadahiko
Format:	Artikel
Sprache:	eng
Schlagworte:	aluminum nitride annealing Cross-disciplinary physics: materials science rheology Deposition by sputtering Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy orientation Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications
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