Subsolidus Phase Relations in the Ga2O3-In2O3-SnO2 System

Subsolidus phase relationships in the Ga2O3–In2O3–SnO2 system were studied by X‐ray diffraction over the temperature range 1250–1400°C. At 1250°C, several phases are stable in the ternary system, including Ga2O3(ss), In2O3(ss), SnO2, Ga3−xIn5+xSn2O16, and several intergrowth phases that can be expressed as Ga4−4xIn4xSnn−4O2n−2 where n is an integer. An In2O3–SnO2 phase and Ga4SnO8 form at 1375°C but are not stable at 1250°C. GaInO3 did not form over the temperature range 1000–1400°C.