Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

We study the impact of the SiGe thickness in starting substrates composed of Si/Si0.25Ge0.75/SOI(100) structures for the Ge condensation process on the resulting Ge-on-insulator (GOI) film properties. We evaluate the physical properties of the GOI films using AFM and Raman spectroscopy. It is found...

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Veröffentlicht in:	Applied physics letters 2019-02, Vol.114 (6)
Hauptverfasser:	Jo, Kwang-Won, Kim, Wu-Kang, Takenaka, Mitsuru, Takagi, Shinichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Compressive properties Condensation Field effect transistors Germanium Hole mobility MOSFETs Physical properties Raman spectroscopy Semiconductor devices Silicon germanides Silicon substrates Strain distribution Strain relaxation Thick films Thickness
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