Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage
Determination of chip temperature is a key element in the lifetime estimation of power devices. There are several temperature sensitive electrical parameters for this purpose, which allow accurate measuring of the chip temperature on fully packaged devices. Among all these parameters, the forward vo...
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| Veröffentlicht in: | IEEE transactions on power electronics 2019-03, Vol.34 (3), p.2781-2793 |
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| container_title | IEEE transactions on power electronics |
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| creator | Zeng, Guang Cao, Haiyang Chen, Weinan Lutz, Josef |
| description | Determination of chip temperature is a key element in the lifetime estimation of power devices. There are several temperature sensitive electrical parameters for this purpose, which allow accurate measuring of the chip temperature on fully packaged devices. Among all these parameters, the forward voltage of a p-n junction is probably the most widely used parameter for temperature determination of a power semiconductor device. In metal-oxide-semiconductor (MOS) gated power semiconductor devices, gate threshold voltage is an alternative parameter with high temperature resolution. In this paper, the p-n-junction forward voltage and the gate threshold voltage of MOS-gated power devices were investigated. The difference between temperature measurements via the two methods was analyzed. |
| doi_str_mv | 10.1109/TPEL.2018.2842459 |
| format | Article |
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There are several temperature sensitive electrical parameters for this purpose, which allow accurate measuring of the chip temperature on fully packaged devices. Among all these parameters, the forward voltage of a p-n junction is probably the most widely used parameter for temperature determination of a power semiconductor device. In metal-oxide-semiconductor (MOS) gated power semiconductor devices, gate threshold voltage is an alternative parameter with high temperature resolution. In this paper, the p-n-junction forward voltage and the gate threshold voltage of MOS-gated power devices were investigated. The difference between temperature measurements via the two methods was analyzed.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2018.2842459</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Current measurement ; High temperature ; Insulated-gate bipolar transistors (IGBT) ; Logic gates ; Metal oxides ; metal-oxide-semiconductor field-effect transistor (<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> scriptscriptstyle{\text{MOSFET}}</tex-math> </inline-formula>s) ; P-n junctions ; Parameter sensitivity ; Power semiconductor devices ; Semiconductor device measurement ; Semiconductors ; Service life assessment ; Temperature measurement ; Temperature sensors ; Threshold voltage ; Voltage measurement</subject><ispartof>IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2781-2793</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-912154ca555a4a719a74c3dacc1409b6fbee73b12eb4ccdb644a1fa173b699a83</citedby><cites>FETCH-LOGICAL-c359t-912154ca555a4a719a74c3dacc1409b6fbee73b12eb4ccdb644a1fa173b699a83</cites><orcidid>0000-0001-5227-4220 ; 0000-0001-8275-7848</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8370101$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8370101$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zeng, Guang</creatorcontrib><creatorcontrib>Cao, Haiyang</creatorcontrib><creatorcontrib>Chen, Weinan</creatorcontrib><creatorcontrib>Lutz, Josef</creatorcontrib><title>Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>Determination of chip temperature is a key element in the lifetime estimation of power devices. There are several temperature sensitive electrical parameters for this purpose, which allow accurate measuring of the chip temperature on fully packaged devices. Among all these parameters, the forward voltage of a p-n junction is probably the most widely used parameter for temperature determination of a power semiconductor device. In metal-oxide-semiconductor (MOS) gated power semiconductor devices, gate threshold voltage is an alternative parameter with high temperature resolution. In this paper, the p-n-junction forward voltage and the gate threshold voltage of MOS-gated power devices were investigated. The difference between temperature measurements via the two methods was analyzed.</description><subject>Current measurement</subject><subject>High temperature</subject><subject>Insulated-gate bipolar transistors (IGBT)</subject><subject>Logic gates</subject><subject>Metal oxides</subject><subject>metal-oxide-semiconductor field-effect transistor (<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> scriptscriptstyle{\text{MOSFET}}</tex-math> </inline-formula>s)</subject><subject>P-n junctions</subject><subject>Parameter sensitivity</subject><subject>Power semiconductor devices</subject><subject>Semiconductor device measurement</subject><subject>Semiconductors</subject><subject>Service life assessment</subject><subject>Temperature measurement</subject><subject>Temperature sensors</subject><subject>Threshold voltage</subject><subject>Voltage measurement</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1OwzAQhC0EEqXwAIhLJM4p3thJ7CPqH6BKcGi5Wo6zaVOlTrBTEG-PS6uedjU7Myt9hNwDHQFQ-bT8mC5GCQUxSgRPeCovyAAkh5gCzS_JgAqRxkJKdk1uvN9SCjylMCDNpK4qdGgNRrWNJvhdh22Juw6d7vcOg9Sj29VW93Vro5Wv7TrqYhu_7a35l2at-9GujD7bptdrjLQto7nuQ8vGod-0zfl0S64q3Xi8O80hWc2my_FLvHifv46fF7FhqexjCQmk3Og0TTXXOUidc8NKbQxwKousKhBzVkCCBTemLDLONVQagpZJqQUbksdjb-farz36Xm3bvbPhpUogzxlkgrPggqPLuNZ7h5XqXL3T7lcBVQeo6gBVHaCqE9SQeThmakQ8-wXLA2Zgf2_edAs</recordid><startdate>20190301</startdate><enddate>20190301</enddate><creator>Zeng, Guang</creator><creator>Cao, Haiyang</creator><creator>Chen, Weinan</creator><creator>Lutz, Josef</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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There are several temperature sensitive electrical parameters for this purpose, which allow accurate measuring of the chip temperature on fully packaged devices. Among all these parameters, the forward voltage of a p-n junction is probably the most widely used parameter for temperature determination of a power semiconductor device. In metal-oxide-semiconductor (MOS) gated power semiconductor devices, gate threshold voltage is an alternative parameter with high temperature resolution. In this paper, the p-n-junction forward voltage and the gate threshold voltage of MOS-gated power devices were investigated. The difference between temperature measurements via the two methods was analyzed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPEL.2018.2842459</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0001-5227-4220</orcidid><orcidid>https://orcid.org/0000-0001-8275-7848</orcidid></addata></record> |
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| ispartof | IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2781-2793 |
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| subjects | Current measurement High temperature Insulated-gate bipolar transistors (IGBT) Logic gates Metal oxides metal-oxide-semiconductor field-effect transistor (<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> scriptscriptstyle{\text{MOSFET}}</tex-math> </inline-formula>s) P-n junctions Parameter sensitivity Power semiconductor devices Semiconductor device measurement Semiconductors Service life assessment Temperature measurement Temperature sensors Threshold voltage Voltage measurement |
| title | Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage |
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