A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

New packaging solutions and power module structures are required to fully utilize the benefits of emerging commercially available wide bandgap semiconductor devices. Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry...

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Veröffentlicht in:	IEEE transactions on power electronics 2019-03, Vol.34 (3), p.2494-2504
Hauptverfasser:	Jorgensen, Asger Bjorn, Beczkowski, Szymon, Uhrenfeldt, Christian, Petersen, Niels Hogholt, Jorgensen, Soren, Munk-Nielsen, Stig
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit design Circuit simulation Circuits Computer simulation Copper Driver circuits Gallium nitride Gallium nitrides Gate drivers Gates (circuits) Hybrid structures Inductance Logic gates Mathematical models Modules Multichip modules Packaging Parasitics (electronics) power semiconductor switches semiconductor device packaging Semiconductor devices Simulation Switches Switching Transistors Wide bandgap semiconductors
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