A reduced ABC model for the carrier imbalance problem in GaN/InGaN quantum wells
A reduction of the ABC model that deals with the carrier imbalance problem in GaN/InGaN quantum wells is proposed. It is shown that, after the definition of a proper effective carrier density, the band-to-band recombination rate can be expressed using only one probability coefficient, thus reducing...
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| Veröffentlicht in: | Applied physics. B, Lasers and optics Lasers and optics, 2019-03, Vol.125 (3), p.1-7, Article 37 |
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| container_title | Applied physics. B, Lasers and optics |
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| creator | Salis, M. Ricci, P. C. Carbonaro, C. M. |
| description | A reduction of the ABC model that deals with the carrier imbalance problem in GaN/InGaN quantum wells is proposed. It is shown that, after the definition of a proper effective carrier density, the band-to-band recombination rate can be expressed using only one probability coefficient, thus reducing the free parameters of the model with no loss of efficiency. On the contrary, the reduced model allows a more efficient description of the carrier density in the high current regime and expressing the carrier lifetime in a large range of current densities as
τ
∝
1
/
J
. In addition, by checking experimental data available in the literature, we show that the reduced model allows a better match of the internal quantum efficiency droop curve vs current density as compared to the ABC model and equivalent to more sophisticated package-based models. |
| doi_str_mv | 10.1007/s00340-019-7150-y |
| format | Article |
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τ
∝
1
/
J
. In addition, by checking experimental data available in the literature, we show that the reduced model allows a better match of the internal quantum efficiency droop curve vs current density as compared to the ABC model and equivalent to more sophisticated package-based models.</description><identifier>ISSN: 0946-2171</identifier><identifier>EISSN: 1432-0649</identifier><identifier>DOI: 10.1007/s00340-019-7150-y</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Applied physics ; Carrier density ; Carrier lifetime ; Carrier recombination ; Current density ; Engineering ; Gallium nitrides ; Indium gallium nitrides ; Lasers ; Optical Devices ; Optics ; Photonics ; Physical Chemistry ; Physics ; Physics and Astronomy ; Quantum efficiency ; Quantum Optics ; Quantum wells</subject><ispartof>Applied physics. B, Lasers and optics, 2019-03, Vol.125 (3), p.1-7, Article 37</ispartof><rights>Springer-Verlag GmbH Germany, part of Springer Nature 2019</rights><rights>Copyright Springer Nature B.V. 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-914804130900b718b40baca4b9681260b6291e6d02e4cdb28c074364c21715e33</citedby><cites>FETCH-LOGICAL-c316t-914804130900b718b40baca4b9681260b6291e6d02e4cdb28c074364c21715e33</cites><orcidid>0000-0003-4362-1117</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00340-019-7150-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00340-019-7150-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Salis, M.</creatorcontrib><creatorcontrib>Ricci, P. C.</creatorcontrib><creatorcontrib>Carbonaro, C. M.</creatorcontrib><title>A reduced ABC model for the carrier imbalance problem in GaN/InGaN quantum wells</title><title>Applied physics. B, Lasers and optics</title><addtitle>Appl. Phys. B</addtitle><description>A reduction of the ABC model that deals with the carrier imbalance problem in GaN/InGaN quantum wells is proposed. It is shown that, after the definition of a proper effective carrier density, the band-to-band recombination rate can be expressed using only one probability coefficient, thus reducing the free parameters of the model with no loss of efficiency. On the contrary, the reduced model allows a more efficient description of the carrier density in the high current regime and expressing the carrier lifetime in a large range of current densities as
τ
∝
1
/
J
. In addition, by checking experimental data available in the literature, we show that the reduced model allows a better match of the internal quantum efficiency droop curve vs current density as compared to the ABC model and equivalent to more sophisticated package-based models.</description><subject>Applied physics</subject><subject>Carrier density</subject><subject>Carrier lifetime</subject><subject>Carrier recombination</subject><subject>Current density</subject><subject>Engineering</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Lasers</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physical Chemistry</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum efficiency</subject><subject>Quantum Optics</subject><subject>Quantum wells</subject><issn>0946-2171</issn><issn>1432-0649</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kE9PwzAMxSMEEmPwAbhF4hxmN1naHMcEY9IEHOAcJWkGnfpnS1qhfXsyFYkTPtiX37P9HiG3CPcIkM8iABfAABXLcQ7seEYmKHjGQAp1TiaghGQZ5nhJrmLcQSpZFBPytqDBl4PzJV08LGnTlb6m2y7Q_stTZ0KofKBVY01tWufpPnS29g2tWroyL7N1mzo9DKbth4Z--7qO1-Ria-rob37nlHw8Pb4vn9nmdbVeLjbMcZQ9UygKEMhBAdgcCyvAGmeEVbLATIKVmUIvS8i8cKXNCge54FK4k4e553xK7sa96aXD4GOvd90Q2nRSJ0Ty5FuoROFIudDFGPxW70PVmHDUCPoUnB6D0yk4fQpOH5MmGzUxse2nD3-b_xf9AD1XbeA</recordid><startdate>20190301</startdate><enddate>20190301</enddate><creator>Salis, M.</creator><creator>Ricci, P. C.</creator><creator>Carbonaro, C. M.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-4362-1117</orcidid></search><sort><creationdate>20190301</creationdate><title>A reduced ABC model for the carrier imbalance problem in GaN/InGaN quantum wells</title><author>Salis, M. ; Ricci, P. C. ; Carbonaro, C. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-914804130900b718b40baca4b9681260b6291e6d02e4cdb28c074364c21715e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Carrier density</topic><topic>Carrier lifetime</topic><topic>Carrier recombination</topic><topic>Current density</topic><topic>Engineering</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Lasers</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physical Chemistry</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum efficiency</topic><topic>Quantum Optics</topic><topic>Quantum wells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Salis, M.</creatorcontrib><creatorcontrib>Ricci, P. C.</creatorcontrib><creatorcontrib>Carbonaro, C. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. B, Lasers and optics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Salis, M.</au><au>Ricci, P. C.</au><au>Carbonaro, C. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A reduced ABC model for the carrier imbalance problem in GaN/InGaN quantum wells</atitle><jtitle>Applied physics. B, Lasers and optics</jtitle><stitle>Appl. Phys. B</stitle><date>2019-03-01</date><risdate>2019</risdate><volume>125</volume><issue>3</issue><spage>1</spage><epage>7</epage><pages>1-7</pages><artnum>37</artnum><issn>0946-2171</issn><eissn>1432-0649</eissn><abstract>A reduction of the ABC model that deals with the carrier imbalance problem in GaN/InGaN quantum wells is proposed. It is shown that, after the definition of a proper effective carrier density, the band-to-band recombination rate can be expressed using only one probability coefficient, thus reducing the free parameters of the model with no loss of efficiency. On the contrary, the reduced model allows a more efficient description of the carrier density in the high current regime and expressing the carrier lifetime in a large range of current densities as
τ
∝
1
/
J
. In addition, by checking experimental data available in the literature, we show that the reduced model allows a better match of the internal quantum efficiency droop curve vs current density as compared to the ABC model and equivalent to more sophisticated package-based models.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00340-019-7150-y</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-4362-1117</orcidid></addata></record> |
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| ispartof | Applied physics. B, Lasers and optics, 2019-03, Vol.125 (3), p.1-7, Article 37 |
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| language | eng |
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| subjects | Applied physics Carrier density Carrier lifetime Carrier recombination Current density Engineering Gallium nitrides Indium gallium nitrides Lasers Optical Devices Optics Photonics Physical Chemistry Physics Physics and Astronomy Quantum efficiency Quantum Optics Quantum wells |
| title | A reduced ABC model for the carrier imbalance problem in GaN/InGaN quantum wells |
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