Band gap-tuned MoS2(1−x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process

MoS2(1−x)Te2x thin films were fabricated by high-temperature co-sputtering deposition and post-deposition tellurization annealing using novel Te precursor (i-C3H7)2Te for the first time. As a result, high crystal quality MoS2(1−x)Te2x (6.5 nm) were successfully fabricated with the Te concentration x...

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Veröffentlicht in:	Journal of materials research 2017-08, Vol.32 (16), p.3021-3028
Hauptverfasser:	Hibino, Yusuke, Ishihara, Seiya, Sawamoto, Naomi, Ohashi, Takumi, Matsuura, Kentarou, Machida, Hideaki, Wakabayashi, Hitoshi, Ogura, Atsushi
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Annealing Bowing Composition Deposition Energy gap High temperature Investigations Invited Paper Materials research Molybdenum disulfide Parameters Physical properties Radio frequency Spectrum analysis Sputtering Thin films Transition metal compounds
Online-Zugang:	Volltext
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