Improved Electrical Contact Properties of MoS2‐Graphene Lateral Heterostructure

2D materials have been extensively investigated in view of their excellent electrical/optical properties, with particular attention directed at the fabrication of vertical or lateral heterostructures. Although such heterostructures exhibit unexpected or enhanced properties compared to those of singly used 2D materials, their fabrication is challenged by the difficulty of realizing spatial control and large area integration. Herein, MoS2 is grown on patterned graphene at variable temperatures, combining the concept of lateral heterostructure with chemical vapor deposition to realize large area growth with precise spatial control, and probe the spatial distribution of graphene and MoS2 by a number of instrumental techniques. The prepared MoS2‐graphene lateral heterostructure is employed to construct field effect transistors with graphene as the source/drain and MoS2 as the channel, and the performance of these transistors (on/off ratio ≈109, maximum field effect mobility = 8.5 cm2 V−1 s−1) is shown to exceed that of their MoS2‐only counterparts. In this work, a MoS2‐graphene lateral heterostructure is synthesized by means of chemical vapor deposition, investigating the effect of MoS2 growth temperature on vertical/lateral heterostructure. The field effect mobility of field effect transistors (FETs) based on the fabricated heterostructure exceeds that of FETs based on only MoS2, which is ascribed to the decreased contact resistance resulting from the use of the graphene as source/drain.