Atomic-Scale Simulation for Pseudometallic Defect-Generation Kinetics and Effective NIEL in GaN

We have employed large-scale molecular dynamics simulations to study defect production, clustering, and its evolution in GaN for energies of a primary knock-on atom ranging from 500 eV to 40 keV. In the presence of proton radiation, a large number of atoms will be displaced during the collisional ph...

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