A 10-MHz eGaN Isolated Class-Φ2 DCX

Derived from the class-E resonant converters, the isolated class-Φ 2 resonant converters have much reduced voltage stress of the control FET owing to a shunt branch paralleled with the switch to provide low pass path for the second harmonic voltage. With the increase of the input voltage, the revers...

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Veröffentlicht in:	IEEE transactions on power electronics 2017-03, Vol.32 (3), p.2029-2040
Hauptverfasser:	Zhang, Zhiliang, Xue-Wen Zou, Zhou, Dong, Zhou, Yuan, Ren, Xiaoyong
Format:	Artikel
Sprache:	eng
Schlagworte:	Conduction losses Converters DC transformer (DCX) Electric potential enhancement mode gallium nitride (eGaN) HEMT Gallium nitrides HEMTs High electron mobility transistors isolated resonant converter MODFETs multi-MHz Rectifiers Semiconductor devices Switches Switching Voltage control voltage following control Zero voltage switching
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