A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker
This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two series-connected SiC MOSFETs with the proposed circuit only require a single standard gate d...
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| Veröffentlicht in: | IEEE transactions on industrial electronics (1982) 2017-10, Vol.64 (10), p.8299-8309 |
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| container_title | IEEE transactions on industrial electronics (1982) |
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| creator | Ren, Yu Yang, Xu Zhang, Fan Wang, Kangping Chen, Wenjie Wang, Laili Pei, Yunqing |
| description | This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two series-connected SiC MOSFETs with the proposed circuit only require a single standard gate driver to achieve the gate control and voltage balancing during both steady-state and switching transition. Moreover, the proposed circuit is only composed of ten passive components. Therefore, the proposed circuit provides a low-cost and highly reliable method to increase the blocking voltage of the SiC MOSFET. The operation principles of the proposed circuit are theoretically analyzed. In addition, the high-blocking-voltage device is not only required in switching-mode power supply (SMPS) but also in dc-breaker applications. The proposed circuit is then modified to make it suitable to the dc-breaker applications. The simulation and experimental results validate the effectiveness and superiority of the proposed circuit in both SMPS and dc-breaker applications. |
| doi_str_mv | 10.1109/TIE.2017.2711579 |
| format | Article |
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Two series-connected SiC MOSFETs with the proposed circuit only require a single standard gate driver to achieve the gate control and voltage balancing during both steady-state and switching transition. Moreover, the proposed circuit is only composed of ten passive components. Therefore, the proposed circuit provides a low-cost and highly reliable method to increase the blocking voltage of the SiC MOSFET. The operation principles of the proposed circuit are theoretically analyzed. In addition, the high-blocking-voltage device is not only required in switching-mode power supply (SMPS) but also in dc-breaker applications. The proposed circuit is then modified to make it suitable to the dc-breaker applications. The simulation and experimental results validate the effectiveness and superiority of the proposed circuit in both SMPS and dc-breaker applications.</description><identifier>ISSN: 0278-0046</identifier><identifier>EISSN: 1557-9948</identifier><identifier>DOI: 10.1109/TIE.2017.2711579</identifier><identifier>CODEN: ITIED6</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>DC circuit breaker ; Electric potential ; Field effect transistors ; gate control ; Logic gates ; MOSFET ; MOSFETs ; Passive components ; Semiconductor devices ; series connection ; SiC MOSFET ; Silicon ; Silicon carbide ; Steady-state ; Switched mode power supplies ; Switching ; Topology ; voltage balancing</subject><ispartof>IEEE transactions on industrial electronics (1982), 2017-10, Vol.64 (10), p.8299-8309</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-b3a84e8d913032649f31d2993c9c57b317cbdcce1b8feb82199183936d068d2e3</citedby><cites>FETCH-LOGICAL-c291t-b3a84e8d913032649f31d2993c9c57b317cbdcce1b8feb82199183936d068d2e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7938421$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7938421$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ren, Yu</creatorcontrib><creatorcontrib>Yang, Xu</creatorcontrib><creatorcontrib>Zhang, Fan</creatorcontrib><creatorcontrib>Wang, Kangping</creatorcontrib><creatorcontrib>Chen, Wenjie</creatorcontrib><creatorcontrib>Wang, Laili</creatorcontrib><creatorcontrib>Pei, Yunqing</creatorcontrib><title>A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker</title><title>IEEE transactions on industrial electronics (1982)</title><addtitle>TIE</addtitle><description>This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two series-connected SiC MOSFETs with the proposed circuit only require a single standard gate driver to achieve the gate control and voltage balancing during both steady-state and switching transition. Moreover, the proposed circuit is only composed of ten passive components. Therefore, the proposed circuit provides a low-cost and highly reliable method to increase the blocking voltage of the SiC MOSFET. The operation principles of the proposed circuit are theoretically analyzed. In addition, the high-blocking-voltage device is not only required in switching-mode power supply (SMPS) but also in dc-breaker applications. The proposed circuit is then modified to make it suitable to the dc-breaker applications. The simulation and experimental results validate the effectiveness and superiority of the proposed circuit in both SMPS and dc-breaker applications.</description><subject>DC circuit breaker</subject><subject>Electric potential</subject><subject>Field effect transistors</subject><subject>gate control</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Passive components</subject><subject>Semiconductor devices</subject><subject>series connection</subject><subject>SiC MOSFET</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Steady-state</subject><subject>Switched mode power supplies</subject><subject>Switching</subject><subject>Topology</subject><subject>voltage balancing</subject><issn>0278-0046</issn><issn>1557-9948</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMFPwjAUhxujiYjeTbw08TzsazfWHmEikmA4gF6XrnsjxbHNthz47x1CPL388n7fe8lHyCOwEQBTL5vFbMQZpCOeAiSpuiIDSJI0UiqW12TAeCojxuLxLbnzfscYxAkkA3Kc0Kzdd9oEOtcB-9AE19ZUNyX9auugtxhNda0bY5stzawzBxto1Tq6RmfRRz3QoAlY0rXN6Mdq_Tbb-D98ETyddF1tjQ62bahtqKavGZ061N_o7slNpWuPD5c5JJ89mr1Hy9V8kU2WkeEKQlQILWOUpQLBBB_HqhJQcqWEUSZJCwGpKUpjEApZYSE5KAVSKDEu2ViWHMWQPJ_vdq79OaAP-a49uKZ_mXNI45hJnoi-xc4t41rvHVZ55-xeu2MOLD8JznvB-UlwfhHcI09nxCLif71fyJiD-AVN6HTq</recordid><startdate>201710</startdate><enddate>201710</enddate><creator>Ren, Yu</creator><creator>Yang, Xu</creator><creator>Zhang, Fan</creator><creator>Wang, Kangping</creator><creator>Chen, Wenjie</creator><creator>Wang, Laili</creator><creator>Pei, Yunqing</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201710</creationdate><title>A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker</title><author>Ren, Yu ; Yang, Xu ; Zhang, Fan ; Wang, Kangping ; Chen, Wenjie ; Wang, Laili ; Pei, Yunqing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-b3a84e8d913032649f31d2993c9c57b317cbdcce1b8feb82199183936d068d2e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>DC circuit breaker</topic><topic>Electric potential</topic><topic>Field effect transistors</topic><topic>gate control</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Passive components</topic><topic>Semiconductor devices</topic><topic>series connection</topic><topic>SiC MOSFET</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>Steady-state</topic><topic>Switched mode power supplies</topic><topic>Switching</topic><topic>Topology</topic><topic>voltage balancing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ren, Yu</creatorcontrib><creatorcontrib>Yang, Xu</creatorcontrib><creatorcontrib>Zhang, Fan</creatorcontrib><creatorcontrib>Wang, Kangping</creatorcontrib><creatorcontrib>Chen, Wenjie</creatorcontrib><creatorcontrib>Wang, Laili</creatorcontrib><creatorcontrib>Pei, Yunqing</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on industrial electronics (1982)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ren, Yu</au><au>Yang, Xu</au><au>Zhang, Fan</au><au>Wang, Kangping</au><au>Chen, Wenjie</au><au>Wang, Laili</au><au>Pei, Yunqing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker</atitle><jtitle>IEEE transactions on industrial electronics (1982)</jtitle><stitle>TIE</stitle><date>2017-10</date><risdate>2017</risdate><volume>64</volume><issue>10</issue><spage>8299</spage><epage>8309</epage><pages>8299-8309</pages><issn>0278-0046</issn><eissn>1557-9948</eissn><coden>ITIED6</coden><abstract>This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two series-connected SiC MOSFETs with the proposed circuit only require a single standard gate driver to achieve the gate control and voltage balancing during both steady-state and switching transition. Moreover, the proposed circuit is only composed of ten passive components. Therefore, the proposed circuit provides a low-cost and highly reliable method to increase the blocking voltage of the SiC MOSFET. The operation principles of the proposed circuit are theoretically analyzed. In addition, the high-blocking-voltage device is not only required in switching-mode power supply (SMPS) but also in dc-breaker applications. The proposed circuit is then modified to make it suitable to the dc-breaker applications. The simulation and experimental results validate the effectiveness and superiority of the proposed circuit in both SMPS and dc-breaker applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TIE.2017.2711579</doi><tpages>11</tpages></addata></record> |
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| ispartof | IEEE transactions on industrial electronics (1982), 2017-10, Vol.64 (10), p.8299-8309 |
| issn | 0278-0046 1557-9948 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | DC circuit breaker Electric potential Field effect transistors gate control Logic gates MOSFET MOSFETs Passive components Semiconductor devices series connection SiC MOSFET Silicon Silicon carbide Steady-state Switched mode power supplies Switching Topology voltage balancing |
| title | A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker |
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