Electrical switching properties and structural characteristics of GeSe-GeTe films

Germanium chalcogenides, especially GeSe and GeTe alloys, have recently gained popularity because of their Ovonic threshold (volatile) and memory (non-volatile) switching properties, with great potential for electric storage applications. Materials designed in a pseudo-binary way may possess superio...

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Veröffentlicht in:	Nanoscale 2019-01, Vol.11 (4), p.1595-163
Hauptverfasser:	Ren, Kun, Zhu, Min, Song, Wenxiong, Lv, Shilong, Xia, Mengjiao, Wang, Yong, Lu, Yaoyao, Ji, Zhenguo, Song, Zhitang
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Computer memory Crystallization Electric properties Mapping Phase transitions Properties (attributes) State of the art Switching
Online-Zugang:	Volltext
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