Back Migration Based Long Lifetime Approach for Organic Light‐Emitting Diode

Lifetime is one critical reliability issue in electronics, especially in organic devices including organic light emitting diodes (OLEDs), solar cells, thin film batteries, thin film transistors, and memories, etc. Many causes that contribute to device failures have been found out. So far, several me...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2019-01, Vol.216 (2), p.n/a
Hauptverfasser: Jou, Jwo‐Huei, Tai, Tzu‐Chieh, Su, Yu‐Ting, Yu, Hui‐Huan, Chiang, Chi‐Heng, Chavhan, Sudam D., Lin, You‐Ting, Shyue, Jing‐Jong, Liang, Tzu‐Wei
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page n/a
container_issue 2
container_start_page
container_title Physica status solidi. A, Applications and materials science
container_volume 216
creator Jou, Jwo‐Huei
Tai, Tzu‐Chieh
Su, Yu‐Ting
Yu, Hui‐Huan
Chiang, Chi‐Heng
Chavhan, Sudam D.
Lin, You‐Ting
Shyue, Jing‐Jong
Liang, Tzu‐Wei
description Lifetime is one critical reliability issue in electronics, especially in organic devices including organic light emitting diodes (OLEDs), solar cells, thin film batteries, thin film transistors, and memories, etc. Many causes that contribute to device failures have been found out. So far, several methods for improvement in the device lifetime have been proposed, albeit effective approaches are still under developing and the ideal will be the one that enables cost‐effective fabrication with ease of processing. Here an easy‐to‐apply method based on the back migration to improve the lifetime of OLED as well as LED devices are presented. That is done by simply applying a reverse bias voltage with an appropriate magnitude. For example, lifetime of a studied white OLED device at 9500 cd m−2 can be increased from 288 to 685 h, an increment of 137%, as a reverse bias of 10 V is applied to the pristine device for 2 h. It can be further increased to 857 h, an increment of 197%, as the reverse bias is kept for 4 h. The lifetime can still be improved for non‐pristine devices. Reverse poling causes back‐diffusion of electrode atoms and OLED materials, and reduces the growth of spikes on both electrodes. White OLED device lifetime at 9500 cd m−2 is increased from 288 to 857 h, an increment of 197%, by applying a 10 V reverse bias for 4 h.
doi_str_mv 10.1002/pssa.201800390
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2169584279</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2169584279</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3170-b9d5b9df6c08c6476171ac33cee55511f65cee79552de847e4a6f85e051267763</originalsourceid><addsrcrecordid>eNqFkLFOwzAQhi0EEqWwMkdiTjknsR2PbWkBKVCkwmwZx0ld2jjYqVA3HoFn5ElwVVRGhtP90n3_3elH6BLDAAMk1633cpAAzgFSDkeoh3OaxDTF_PigAU7RmfdLgIxkDPfQ40iqt-jB1E52xjbRSHpdRoVt6qgwle7MWkfDtnVWqkVUWRfNXC0bo8K0XnTfn1-Ttek6E_AbY0t9jk4qufL64rf30ct08jy-i4vZ7f14WMQqxQziV16SUBVVkCuaMYoZlipNldaEEIwrSoJknJCk1HnGdCZplRMNBCeUMZr20dV-b_jsfaN9J5Z245pwUiSYcpJnCeOBGuwp5az3TleidWYt3VZgELvMxC4zccgsGPje8GFWevsPLZ7m8-Gf9wc2XXAb</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2169584279</pqid></control><display><type>article</type><title>Back Migration Based Long Lifetime Approach for Organic Light‐Emitting Diode</title><source>Access via Wiley Online Library</source><creator>Jou, Jwo‐Huei ; Tai, Tzu‐Chieh ; Su, Yu‐Ting ; Yu, Hui‐Huan ; Chiang, Chi‐Heng ; Chavhan, Sudam D. ; Lin, You‐Ting ; Shyue, Jing‐Jong ; Liang, Tzu‐Wei</creator><creatorcontrib>Jou, Jwo‐Huei ; Tai, Tzu‐Chieh ; Su, Yu‐Ting ; Yu, Hui‐Huan ; Chiang, Chi‐Heng ; Chavhan, Sudam D. ; Lin, You‐Ting ; Shyue, Jing‐Jong ; Liang, Tzu‐Wei</creatorcontrib><description>Lifetime is one critical reliability issue in electronics, especially in organic devices including organic light emitting diodes (OLEDs), solar cells, thin film batteries, thin film transistors, and memories, etc. Many causes that contribute to device failures have been found out. So far, several methods for improvement in the device lifetime have been proposed, albeit effective approaches are still under developing and the ideal will be the one that enables cost‐effective fabrication with ease of processing. Here an easy‐to‐apply method based on the back migration to improve the lifetime of OLED as well as LED devices are presented. That is done by simply applying a reverse bias voltage with an appropriate magnitude. For example, lifetime of a studied white OLED device at 9500 cd m−2 can be increased from 288 to 685 h, an increment of 137%, as a reverse bias of 10 V is applied to the pristine device for 2 h. It can be further increased to 857 h, an increment of 197%, as the reverse bias is kept for 4 h. The lifetime can still be improved for non‐pristine devices. Reverse poling causes back‐diffusion of electrode atoms and OLED materials, and reduces the growth of spikes on both electrodes. White OLED device lifetime at 9500 cd m−2 is increased from 288 to 857 h, an increment of 197%, by applying a 10 V reverse bias for 4 h.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201800390</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Bias ; electronic devices ; lifetime ; Migration ; Organic Light‐Emitting Diodes ; Photovoltaic cells ; reverse bias ; Semiconductor devices ; Service life assessment ; Solar cells ; Thin film transistors ; Thin films</subject><ispartof>Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (2), p.n/a</ispartof><rights>2018 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><rights>2019 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3170-b9d5b9df6c08c6476171ac33cee55511f65cee79552de847e4a6f85e051267763</citedby><cites>FETCH-LOGICAL-c3170-b9d5b9df6c08c6476171ac33cee55511f65cee79552de847e4a6f85e051267763</cites><orcidid>0000-0001-7134-4968</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.201800390$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.201800390$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,782,786,1419,27933,27934,45583,45584</link.rule.ids></links><search><creatorcontrib>Jou, Jwo‐Huei</creatorcontrib><creatorcontrib>Tai, Tzu‐Chieh</creatorcontrib><creatorcontrib>Su, Yu‐Ting</creatorcontrib><creatorcontrib>Yu, Hui‐Huan</creatorcontrib><creatorcontrib>Chiang, Chi‐Heng</creatorcontrib><creatorcontrib>Chavhan, Sudam D.</creatorcontrib><creatorcontrib>Lin, You‐Ting</creatorcontrib><creatorcontrib>Shyue, Jing‐Jong</creatorcontrib><creatorcontrib>Liang, Tzu‐Wei</creatorcontrib><title>Back Migration Based Long Lifetime Approach for Organic Light‐Emitting Diode</title><title>Physica status solidi. A, Applications and materials science</title><description>Lifetime is one critical reliability issue in electronics, especially in organic devices including organic light emitting diodes (OLEDs), solar cells, thin film batteries, thin film transistors, and memories, etc. Many causes that contribute to device failures have been found out. So far, several methods for improvement in the device lifetime have been proposed, albeit effective approaches are still under developing and the ideal will be the one that enables cost‐effective fabrication with ease of processing. Here an easy‐to‐apply method based on the back migration to improve the lifetime of OLED as well as LED devices are presented. That is done by simply applying a reverse bias voltage with an appropriate magnitude. For example, lifetime of a studied white OLED device at 9500 cd m−2 can be increased from 288 to 685 h, an increment of 137%, as a reverse bias of 10 V is applied to the pristine device for 2 h. It can be further increased to 857 h, an increment of 197%, as the reverse bias is kept for 4 h. The lifetime can still be improved for non‐pristine devices. Reverse poling causes back‐diffusion of electrode atoms and OLED materials, and reduces the growth of spikes on both electrodes. White OLED device lifetime at 9500 cd m−2 is increased from 288 to 857 h, an increment of 197%, by applying a 10 V reverse bias for 4 h.</description><subject>Bias</subject><subject>electronic devices</subject><subject>lifetime</subject><subject>Migration</subject><subject>Organic Light‐Emitting Diodes</subject><subject>Photovoltaic cells</subject><subject>reverse bias</subject><subject>Semiconductor devices</subject><subject>Service life assessment</subject><subject>Solar cells</subject><subject>Thin film transistors</subject><subject>Thin films</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFkLFOwzAQhi0EEqWwMkdiTjknsR2PbWkBKVCkwmwZx0ld2jjYqVA3HoFn5ElwVVRGhtP90n3_3elH6BLDAAMk1633cpAAzgFSDkeoh3OaxDTF_PigAU7RmfdLgIxkDPfQ40iqt-jB1E52xjbRSHpdRoVt6qgwle7MWkfDtnVWqkVUWRfNXC0bo8K0XnTfn1-Ttek6E_AbY0t9jk4qufL64rf30ct08jy-i4vZ7f14WMQqxQziV16SUBVVkCuaMYoZlipNldaEEIwrSoJknJCk1HnGdCZplRMNBCeUMZr20dV-b_jsfaN9J5Z245pwUiSYcpJnCeOBGuwp5az3TleidWYt3VZgELvMxC4zccgsGPje8GFWevsPLZ7m8-Gf9wc2XXAb</recordid><startdate>20190123</startdate><enddate>20190123</enddate><creator>Jou, Jwo‐Huei</creator><creator>Tai, Tzu‐Chieh</creator><creator>Su, Yu‐Ting</creator><creator>Yu, Hui‐Huan</creator><creator>Chiang, Chi‐Heng</creator><creator>Chavhan, Sudam D.</creator><creator>Lin, You‐Ting</creator><creator>Shyue, Jing‐Jong</creator><creator>Liang, Tzu‐Wei</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-7134-4968</orcidid></search><sort><creationdate>20190123</creationdate><title>Back Migration Based Long Lifetime Approach for Organic Light‐Emitting Diode</title><author>Jou, Jwo‐Huei ; Tai, Tzu‐Chieh ; Su, Yu‐Ting ; Yu, Hui‐Huan ; Chiang, Chi‐Heng ; Chavhan, Sudam D. ; Lin, You‐Ting ; Shyue, Jing‐Jong ; Liang, Tzu‐Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3170-b9d5b9df6c08c6476171ac33cee55511f65cee79552de847e4a6f85e051267763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Bias</topic><topic>electronic devices</topic><topic>lifetime</topic><topic>Migration</topic><topic>Organic Light‐Emitting Diodes</topic><topic>Photovoltaic cells</topic><topic>reverse bias</topic><topic>Semiconductor devices</topic><topic>Service life assessment</topic><topic>Solar cells</topic><topic>Thin film transistors</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jou, Jwo‐Huei</creatorcontrib><creatorcontrib>Tai, Tzu‐Chieh</creatorcontrib><creatorcontrib>Su, Yu‐Ting</creatorcontrib><creatorcontrib>Yu, Hui‐Huan</creatorcontrib><creatorcontrib>Chiang, Chi‐Heng</creatorcontrib><creatorcontrib>Chavhan, Sudam D.</creatorcontrib><creatorcontrib>Lin, You‐Ting</creatorcontrib><creatorcontrib>Shyue, Jing‐Jong</creatorcontrib><creatorcontrib>Liang, Tzu‐Wei</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jou, Jwo‐Huei</au><au>Tai, Tzu‐Chieh</au><au>Su, Yu‐Ting</au><au>Yu, Hui‐Huan</au><au>Chiang, Chi‐Heng</au><au>Chavhan, Sudam D.</au><au>Lin, You‐Ting</au><au>Shyue, Jing‐Jong</au><au>Liang, Tzu‐Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Back Migration Based Long Lifetime Approach for Organic Light‐Emitting Diode</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><date>2019-01-23</date><risdate>2019</risdate><volume>216</volume><issue>2</issue><epage>n/a</epage><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>Lifetime is one critical reliability issue in electronics, especially in organic devices including organic light emitting diodes (OLEDs), solar cells, thin film batteries, thin film transistors, and memories, etc. Many causes that contribute to device failures have been found out. So far, several methods for improvement in the device lifetime have been proposed, albeit effective approaches are still under developing and the ideal will be the one that enables cost‐effective fabrication with ease of processing. Here an easy‐to‐apply method based on the back migration to improve the lifetime of OLED as well as LED devices are presented. That is done by simply applying a reverse bias voltage with an appropriate magnitude. For example, lifetime of a studied white OLED device at 9500 cd m−2 can be increased from 288 to 685 h, an increment of 137%, as a reverse bias of 10 V is applied to the pristine device for 2 h. It can be further increased to 857 h, an increment of 197%, as the reverse bias is kept for 4 h. The lifetime can still be improved for non‐pristine devices. Reverse poling causes back‐diffusion of electrode atoms and OLED materials, and reduces the growth of spikes on both electrodes. White OLED device lifetime at 9500 cd m−2 is increased from 288 to 857 h, an increment of 197%, by applying a 10 V reverse bias for 4 h.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/pssa.201800390</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-7134-4968</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 1862-6300
ispartof Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (2), p.n/a
issn 1862-6300
1862-6319
language eng
recordid cdi_proquest_journals_2169584279
source Access via Wiley Online Library
subjects Bias
electronic devices
lifetime
Migration
Organic Light‐Emitting Diodes
Photovoltaic cells
reverse bias
Semiconductor devices
Service life assessment
Solar cells
Thin film transistors
Thin films
title Back Migration Based Long Lifetime Approach for Organic Light‐Emitting Diode
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-03T11%3A29%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Back%20Migration%20Based%20Long%20Lifetime%20Approach%20for%20Organic%20Light%E2%80%90Emitting%20Diode&rft.jtitle=Physica%20status%20solidi.%20A,%20Applications%20and%20materials%20science&rft.au=Jou,%20Jwo%E2%80%90Huei&rft.date=2019-01-23&rft.volume=216&rft.issue=2&rft.epage=n/a&rft.issn=1862-6300&rft.eissn=1862-6319&rft_id=info:doi/10.1002/pssa.201800390&rft_dat=%3Cproquest_cross%3E2169584279%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2169584279&rft_id=info:pmid/&rfr_iscdi=true