Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates
The pulsed-laser single-event transient response of InGaAs FinFETs on bulk silicon substrates is investigated. Charge collection due to a source-drain shunt effect and drain-to-substrate junction charge collection contribute to the observed transients. The transient response of these silicon substra...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2019-01, Vol.66 (1), p.376-383 |
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| creator | Huiqi Gong Kai Ni En Xia Zhang Sternberg, Andrew L. Kozub, John A. Alles, Michael L. Reed, Robert A. Fleetwood, Daniel M. Schrimpf, Ronald D. Waldron, Niamh Kunert, Bernardette Linten, Dimitri |
| description | The pulsed-laser single-event transient response of InGaAs FinFETs on bulk silicon substrates is investigated. Charge collection due to a source-drain shunt effect and drain-to-substrate junction charge collection contribute to the observed transients. The transient response of these silicon substrate devices is compared to that of InGaAs FinFETs on semi-insulating substrates. Faster transients with reduced peak currents and peak widths are observed on the silicon substrate devices. Simulations show hole collection by the silicon substrate. This reduces the amount of source-barrier lowering and bipolar-amplification relative to other III-V devices. Moreover, the reduced hole lifetime in the GaAs buffer layer also contributes to the relative reduction of the bipolar amplification in these devices. |
| doi_str_mv | 10.1109/TNS.2018.2880982 |
| format | Article |
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Charge collection due to a source-drain shunt effect and drain-to-substrate junction charge collection contribute to the observed transients. The transient response of these silicon substrate devices is compared to that of InGaAs FinFETs on semi-insulating substrates. Faster transients with reduced peak currents and peak widths are observed on the silicon substrate devices. Simulations show hole collection by the silicon substrate. This reduces the amount of source-barrier lowering and bipolar-amplification relative to other III-V devices. Moreover, the reduced hole lifetime in the GaAs buffer layer also contributes to the relative reduction of the bipolar amplification in these devices.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2018.2880982</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amplification ; Bipolar amplification ; Buffer layers ; bulk silicon ; charge collection ; Collection ; Devices ; FinFETs ; GaAs ; III-V semiconductor materials ; Indium gallium arsenide ; Indium gallium arsenides ; InGaAs ; lifetime ; Logic gates ; pulsed laser ; Pulsed lasers ; Silicon ; Silicon substrates ; single-event transient (SET) ; Substrates ; technology computer-aided design (TCAD) ; Transient analysis</subject><ispartof>IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.376-383</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-d52902cebffddcc96cb7860bdf91051dde0f2cb30ba766d819d13e41a3d3e3463</citedby><cites>FETCH-LOGICAL-c291t-d52902cebffddcc96cb7860bdf91051dde0f2cb30ba766d819d13e41a3d3e3463</cites><orcidid>0000-0003-4257-7142 ; 0000-0002-3119-0850 ; 0000-0002-8021-2411 ; 0000-0002-3628-3431 ; 0000-0002-1116-8509 ; 0000-0001-7419-2701</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8532366$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8532366$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Huiqi Gong</creatorcontrib><creatorcontrib>Kai Ni</creatorcontrib><creatorcontrib>En Xia Zhang</creatorcontrib><creatorcontrib>Sternberg, Andrew L.</creatorcontrib><creatorcontrib>Kozub, John A.</creatorcontrib><creatorcontrib>Alles, Michael L.</creatorcontrib><creatorcontrib>Reed, Robert A.</creatorcontrib><creatorcontrib>Fleetwood, Daniel M.</creatorcontrib><creatorcontrib>Schrimpf, Ronald D.</creatorcontrib><creatorcontrib>Waldron, Niamh</creatorcontrib><creatorcontrib>Kunert, Bernardette</creatorcontrib><creatorcontrib>Linten, Dimitri</creatorcontrib><title>Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The pulsed-laser single-event transient response of InGaAs FinFETs on bulk silicon substrates is investigated. Charge collection due to a source-drain shunt effect and drain-to-substrate junction charge collection contribute to the observed transients. The transient response of these silicon substrate devices is compared to that of InGaAs FinFETs on semi-insulating substrates. Faster transients with reduced peak currents and peak widths are observed on the silicon substrate devices. Simulations show hole collection by the silicon substrate. This reduces the amount of source-barrier lowering and bipolar-amplification relative to other III-V devices. Moreover, the reduced hole lifetime in the GaAs buffer layer also contributes to the relative reduction of the bipolar amplification in these devices.</description><subject>Amplification</subject><subject>Bipolar amplification</subject><subject>Buffer layers</subject><subject>bulk silicon</subject><subject>charge collection</subject><subject>Collection</subject><subject>Devices</subject><subject>FinFETs</subject><subject>GaAs</subject><subject>III-V semiconductor materials</subject><subject>Indium gallium arsenide</subject><subject>Indium gallium arsenides</subject><subject>InGaAs</subject><subject>lifetime</subject><subject>Logic gates</subject><subject>pulsed laser</subject><subject>Pulsed lasers</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>single-event transient (SET)</subject><subject>Substrates</subject><subject>technology computer-aided design (TCAD)</subject><subject>Transient analysis</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFLAzEQhYMoWKt3wcuC562ZZJNNjrW0tVBUaD14CtkkK1vXbE12Bf-9KS2eZh7z3hv4ELoFPAHA8mH7vJkQDGJChMBSkDM0AsZEDqwU52iE0ymXhZSX6CrGXZIFw2yE3l-HNjqbr3V0IVt5Oxhns03jP1qXz3-c77Nt0D42aYtZ45NlqacxWzR-Md_GrPPZ49B-pkTbmCQ2QxX7oHsXr9FFrVP3zWmO0VtKzJ7y9ctyNZuuc0Mk9LllRGJiXFXX1hojualKwXFlawmYgbUO18RUFFe65NwKkBaoK0BTSx0tOB2j-2PvPnTfg4u92nVD8OmlIsBlURYgILnw0WVCF2NwtdqH5kuHXwVYHQCqBFAdAKoTwBS5O0Ya59y_XTBKKOf0D2MqbDA</recordid><startdate>201901</startdate><enddate>201901</enddate><creator>Huiqi Gong</creator><creator>Kai Ni</creator><creator>En Xia Zhang</creator><creator>Sternberg, Andrew L.</creator><creator>Kozub, John A.</creator><creator>Alles, Michael L.</creator><creator>Reed, Robert A.</creator><creator>Fleetwood, Daniel M.</creator><creator>Schrimpf, Ronald D.</creator><creator>Waldron, Niamh</creator><creator>Kunert, Bernardette</creator><creator>Linten, Dimitri</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Kai Ni ; En Xia Zhang ; Sternberg, Andrew L. ; Kozub, John A. ; Alles, Michael L. ; Reed, Robert A. ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Waldron, Niamh ; Kunert, Bernardette ; Linten, Dimitri</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-d52902cebffddcc96cb7860bdf91051dde0f2cb30ba766d819d13e41a3d3e3463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Amplification</topic><topic>Bipolar amplification</topic><topic>Buffer layers</topic><topic>bulk silicon</topic><topic>charge collection</topic><topic>Collection</topic><topic>Devices</topic><topic>FinFETs</topic><topic>GaAs</topic><topic>III-V semiconductor materials</topic><topic>Indium gallium arsenide</topic><topic>Indium gallium arsenides</topic><topic>InGaAs</topic><topic>lifetime</topic><topic>Logic gates</topic><topic>pulsed laser</topic><topic>Pulsed lasers</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>single-event transient (SET)</topic><topic>Substrates</topic><topic>technology computer-aided design (TCAD)</topic><topic>Transient analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huiqi Gong</creatorcontrib><creatorcontrib>Kai Ni</creatorcontrib><creatorcontrib>En Xia Zhang</creatorcontrib><creatorcontrib>Sternberg, Andrew L.</creatorcontrib><creatorcontrib>Kozub, John A.</creatorcontrib><creatorcontrib>Alles, Michael L.</creatorcontrib><creatorcontrib>Reed, Robert A.</creatorcontrib><creatorcontrib>Fleetwood, Daniel M.</creatorcontrib><creatorcontrib>Schrimpf, Ronald D.</creatorcontrib><creatorcontrib>Waldron, Niamh</creatorcontrib><creatorcontrib>Kunert, Bernardette</creatorcontrib><creatorcontrib>Linten, Dimitri</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huiqi Gong</au><au>Kai Ni</au><au>En Xia Zhang</au><au>Sternberg, Andrew L.</au><au>Kozub, John A.</au><au>Alles, Michael L.</au><au>Reed, Robert A.</au><au>Fleetwood, Daniel M.</au><au>Schrimpf, Ronald D.</au><au>Waldron, Niamh</au><au>Kunert, Bernardette</au><au>Linten, Dimitri</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2019-01</date><risdate>2019</risdate><volume>66</volume><issue>1</issue><spage>376</spage><epage>383</epage><pages>376-383</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The pulsed-laser single-event transient response of InGaAs FinFETs on bulk silicon substrates is investigated. Charge collection due to a source-drain shunt effect and drain-to-substrate junction charge collection contribute to the observed transients. The transient response of these silicon substrate devices is compared to that of InGaAs FinFETs on semi-insulating substrates. Faster transients with reduced peak currents and peak widths are observed on the silicon substrate devices. Simulations show hole collection by the silicon substrate. This reduces the amount of source-barrier lowering and bipolar-amplification relative to other III-V devices. 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| subjects | Amplification Bipolar amplification Buffer layers bulk silicon charge collection Collection Devices FinFETs GaAs III-V semiconductor materials Indium gallium arsenide Indium gallium arsenides InGaAs lifetime Logic gates pulsed laser Pulsed lasers Silicon Silicon substrates single-event transient (SET) Substrates technology computer-aided design (TCAD) Transient analysis |
| title | Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates |
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