Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of \text{I}_{ \mathrm{\scriptscriptstyle ON}} enhancement and 27% \text{V}_{T} reduction under the...

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Veröffentlicht in:	IEEE transactions on electron devices 2019-02, Vol.66 (2), p.1082-1086
Hauptverfasser:	Cheng, Chun-Hu, Fan, Chia-Chi, Liu, Chien, Hsu, Hsiao-Hsuan, Chen, Hsuan-Han, Hsu, Chih-Chieh, Wang, Shih-An, Chang, Chun-Yen
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Capacitance Capacitors Crystallization Electrical measurement Ferroelectric materials Ferroelectricity Ferroelectrics Field effect transistors gate stress (GS) Hysteresis Logic gates negative capacitance (NC) Nitrogen Orthorhombic phase Phase transitions Semiconductor devices Stress Transistors
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