High-temperature electrical resistivity and loss tangent of langasite-family Ca^sub 3^Nb(Ga,Al)^sub 3^Si^sub 2^O^sub 14^ single crystals

Langasite-family Ca3Nb(Ga1− x Al x )3Si2O14 (CNGAS) (x = 0–0.6) single crystals were grown by a Czochralski technique along the x-axis. When the Al substituent was 0.5, electrical resistivity was greatly improved to 1010 Ω cm at 500 °C, which was more than two orders of magnitude higher than that of...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2018-11, Vol.57 (11), p.11UD04
Hauptverfasser:	Karaki, Tomoaki, Ito, Kiyoto, Fujii, Tadashi, Adachi, Masatoshi, Ohashi, Yuji, Kushibiki, Jun-ichi, Yoshikawa, Akira
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Crystal growth Czochralski method Electrical resistivity High temperature Niobium Silicon Single crystals Spectroellipsometry
Online-Zugang:	Volltext
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