Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE
High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10−4 Ω·cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta d...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2018-12, Vol.57 (12), p.120306 |
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| container_issue | 12 |
| container_start_page | 120306 |
| container_title | Japanese Journal of Applied Physics |
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| creator | Kang, Seokjin Ju, Gun Wu Min, Jung-Wook Lee, Dong-Seon Lee, Yong Tak Kim, Hyo Jin Park, Kwangwook |
| description | High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10−4 Ω·cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications. |
| doi_str_mv | 10.7567/JJAP.57.120306 |
| format | Article |
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(NREL), Golden, CO (United States)</creatorcontrib><description>High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10−4 Ω·cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.57.120306</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: The Japan Society of Applied Physics</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Computer simulation ; Doping ; gallium arsenide ; III-V semiconductors ; Photovoltaic cells ; semiconducting gallium ; Silicon ; Solar cells ; Tunnel diodes</subject><ispartof>Japanese Journal of Applied Physics, 2018-12, Vol.57 (12), p.120306</ispartof><rights>2018 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Dec 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-aa985457e350d54186bbcc8a2c9345cdbbd98a22a3c4c4436b2937cfed5355a53</citedby><cites>FETCH-LOGICAL-c429t-aa985457e350d54186bbcc8a2c9345cdbbd98a22a3c4c4436b2937cfed5355a53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.57.120306/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>230,314,776,780,881,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1487332$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kang, Seokjin</creatorcontrib><creatorcontrib>Ju, Gun Wu</creatorcontrib><creatorcontrib>Min, Jung-Wook</creatorcontrib><creatorcontrib>Lee, Dong-Seon</creatorcontrib><creatorcontrib>Lee, Yong Tak</creatorcontrib><creatorcontrib>Kim, Hyo Jin</creatorcontrib><creatorcontrib>Park, Kwangwook</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10−4 Ω·cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Computer simulation</subject><subject>Doping</subject><subject>gallium arsenide</subject><subject>III-V semiconductors</subject><subject>Photovoltaic cells</subject><subject>semiconducting gallium</subject><subject>Silicon</subject><subject>Solar cells</subject><subject>Tunnel diodes</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLxDAUhYMoOD62roOuFDrm2bTL8a0oCuo6pEmqGdqmJhlk_r2RCm50de-F7xzOPQAcYDQXvBSnd3eLpzkXc0wQReUGmGHKRMFQyTfBDCGCC1YTsg12Ylzms-QMz4C9sEm5zhqoBtWto4t5MXC0ofWhV4O2sHO9S254g73V72pwsYe-hc8OGtslVRg_ZvW1WkSYVsNgO2icNxa-Bf85wGYNH84u98BWq7po93_mLni9unw5vynuH69vzxf3hWakToVSdcUZF5ZyZHK8qmwarStFdE0Z16ZpTJ0voqhmmjFaNqSmQrfWcMq54nQXHE6-PiYno3YpR9Y-p9JJYlYJSkmGjiZoDP5jZWOSS78K-fsoCS4FRXWFWabmE6WDjzHYVo7B9SqsJUbyu2_53bfkQk59Z8HxJHB-_HVcLtU4QT-cHE2b2ZM_2H-MvwCvBYzm</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Kang, Seokjin</creator><creator>Ju, Gun Wu</creator><creator>Min, Jung-Wook</creator><creator>Lee, Dong-Seon</creator><creator>Lee, Yong Tak</creator><creator>Kim, Hyo Jin</creator><creator>Park, Kwangwook</creator><general>The Japan Society of Applied Physics</general><general>Japanese Journal of Applied Physics</general><general>Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20181201</creationdate><title>Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE</title><author>Kang, Seokjin ; Ju, Gun Wu ; Min, Jung-Wook ; Lee, Dong-Seon ; Lee, Yong Tak ; Kim, Hyo Jin ; Park, Kwangwook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-aa985457e350d54186bbcc8a2c9345cdbbd98a22a3c4c4436b2937cfed5355a53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Computer simulation</topic><topic>Doping</topic><topic>gallium arsenide</topic><topic>III-V semiconductors</topic><topic>Photovoltaic cells</topic><topic>semiconducting gallium</topic><topic>Silicon</topic><topic>Solar cells</topic><topic>Tunnel diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kang, Seokjin</creatorcontrib><creatorcontrib>Ju, Gun Wu</creatorcontrib><creatorcontrib>Min, Jung-Wook</creatorcontrib><creatorcontrib>Lee, Dong-Seon</creatorcontrib><creatorcontrib>Lee, Yong Tak</creatorcontrib><creatorcontrib>Kim, Hyo Jin</creatorcontrib><creatorcontrib>Park, Kwangwook</creatorcontrib><creatorcontrib>National Renewable Energy Lab. 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(NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2018-12-01</date><risdate>2018</risdate><volume>57</volume><issue>12</issue><spage>120306</spage><pages>120306-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 × 10−4 Ω·cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.</abstract><cop>Tokyo</cop><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.57.120306</doi><tpages>5</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Computer simulation Doping gallium arsenide III-V semiconductors Photovoltaic cells semiconducting gallium Silicon Solar cells Tunnel diodes |
| title | Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE |
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