Band alignment of indium–gallium–zinc oxide/β-Ga^sub 2^O^sub 3^ (201) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

The energy band offsets between indium–gallium–zinc oxide (IGZO) and β-Ga2O3 were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The Ga 2p spectra from the heterojunction contributed by the upper IGZO film and the β-Ga2O3 substrate were deconvoluted into two sub-peaks with the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2018-10, Vol.57 (10), p.100312
Hauptverfasser:	Huan, Ya-Wei, Wang, Xing-Lu, Liu, Wen-Jun, Dong, Hong, Long, Shi-Bing, Sun, Shun-Ming, Yang, Jian-Guo, Wu, Su-Dong, Yu, Wen-Jie, Horng, Ray-Hua, Xia, Chang-Tai, Yu, Hong-Yu, Lu, Hong-Liang, Sun, Qing-Qing, Ding, Shi-Jin, Zhang, David Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Conduction bands Gallium oxides Heterojunctions Indium Indium gallium zinc oxide Offsets Photoelectrons Spectrum analysis Substrates Ultraviolet spectra X ray photoelectron spectroscopy Zinc oxide Zinc oxides
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!