Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si^sub 1− x^ Ge ^sub x^ using bulk Ge-rich Si^sub 1− x^ Ge ^sub x^ crystals and oil-immersion Raman spectroscopy

The strain-free Raman shift of the Ge–Ge mode, ..., of Ge-rich Si1− x Ge x (x: Ge fraction) was determined accurately from the bulk Ge-rich Si1− x Ge x samples fabricated by the Czochralski (Cz) method. Using the obtained ..., the phonon deformation potentials (PDPs), p and q, and the strain-shift c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2018-10, Vol.57 (10), p.106601
Hauptverfasser:	Yokogawa, Ryo, Takeuchi, Kazuma, Murakami, Tatsumi, Usuda, Koji, Yonenaga, Ichiro, Ogura, Atsushi
Format:	Artikel
Sprache:	eng
Schlagworte:	Coefficients Czochralski method Deformation Germanium Mathematical analysis Parameters Raman spectroscopy Silicon Spectrum analysis Strain Submerging Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!