Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si^sub 1− x^ Ge ^sub x^ using bulk Ge-rich Si^sub 1− x^ Ge ^sub x^ crystals and oil-immersion Raman spectroscopy

The strain-free Raman shift of the Ge–Ge mode, ..., of Ge-rich Si1− x Ge x (x: Ge fraction) was determined accurately from the bulk Ge-rich Si1− x Ge x samples fabricated by the Czochralski (Cz) method. Using the obtained ..., the phonon deformation potentials (PDPs), p and q, and the strain-shift coefficient b LO of isotropic biaxial strained Ge-rich Si1− x Ge x thin films were extracted by oil-immersion Raman spectroscopy using Raman peak shifts of longitudinal and transverse optical (LO and TO) phonon modes. As a result, it was confirmed that these parameters are almost constant with small variations and that the strain-shift coefficient b LO is in good agreement with ab initio calculations. The parameters determined in this work are essential to realize accurate strain measurements using Raman spectroscopy for Ge-rich Si1− x Ge x devices. (ProQuest: ... denotes formulae omitted.)