Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer
In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers forme...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2018-06, Vol.57 (6), p.06KB01 |
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creator | Kim, Yu-Jung Jeong, Jun-Kyo Park, Jung-Hyun Jeong, Byung-Jun Lee, Hi-Deok Lee, Ga-Won |
description | In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently. |
doi_str_mv | 10.7567/JJAP.57.06KB01 |
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The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.57.06KB01</identifier><language>eng</language><publisher>Tokyo: Japanese Journal of Applied Physics</publisher><subject>Indium ; Photoelectrons ; Semiconductor devices ; Spin coating ; Thin film transistors ; Thin films ; Transistors ; Ultraviolet radiation ; Zinc oxide ; Zinc oxides</subject><ispartof>Japanese Journal of Applied Physics, 2018-06, Vol.57 (6), p.06KB01</ispartof><rights>Copyright Japanese Journal of Applied Physics Jun 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kim, Yu-Jung</creatorcontrib><creatorcontrib>Jeong, Jun-Kyo</creatorcontrib><creatorcontrib>Park, Jung-Hyun</creatorcontrib><creatorcontrib>Jeong, Byung-Jun</creatorcontrib><creatorcontrib>Lee, Hi-Deok</creatorcontrib><creatorcontrib>Lee, Ga-Won</creatorcontrib><title>Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer</title><title>Japanese Journal of Applied Physics</title><description>In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently.</description><subject>Indium</subject><subject>Photoelectrons</subject><subject>Semiconductor devices</subject><subject>Spin coating</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Transistors</subject><subject>Ultraviolet radiation</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqNjctKxDAUhoMoWC9b1wdctyZtk-BSRZFxoeBlOUNmesqcIU3GXBydle_gG_okFvQBXP18fB_8jJ0IXmmp9NlkcvFQSV1xdXfJxQ4rRNPqsuVK7rKC81qU7Xld77ODGFcjKtmKgm0e0eIi0RvC88v359f9NOY5NFNIAU0a0CXofQByHeUBtuQW4N-pQ0hLctCTHcbSuEgx-RBhQ2kJ0ducyLtybiJ2MGSbaG0RzO-PNR8Yjtheb2zE4789ZKc3109Xt-U6-NeMMc1WPgc3qlktlOZCNko0_6t-AEUKVQk</recordid><startdate>20180601</startdate><enddate>20180601</enddate><creator>Kim, Yu-Jung</creator><creator>Jeong, Jun-Kyo</creator><creator>Park, Jung-Hyun</creator><creator>Jeong, Byung-Jun</creator><creator>Lee, Hi-Deok</creator><creator>Lee, Ga-Won</creator><general>Japanese Journal of Applied Physics</general><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180601</creationdate><title>Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer</title><author>Kim, Yu-Jung ; Jeong, Jun-Kyo ; Park, Jung-Hyun ; Jeong, Byung-Jun ; Lee, Hi-Deok ; Lee, Ga-Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_21670153613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Indium</topic><topic>Photoelectrons</topic><topic>Semiconductor devices</topic><topic>Spin coating</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Transistors</topic><topic>Ultraviolet radiation</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Yu-Jung</creatorcontrib><creatorcontrib>Jeong, Jun-Kyo</creatorcontrib><creatorcontrib>Park, Jung-Hyun</creatorcontrib><creatorcontrib>Jeong, Byung-Jun</creatorcontrib><creatorcontrib>Lee, Hi-Deok</creatorcontrib><creatorcontrib>Lee, Ga-Won</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Yu-Jung</au><au>Jeong, Jun-Kyo</au><au>Park, Jung-Hyun</au><au>Jeong, Byung-Jun</au><au>Lee, Hi-Deok</au><au>Lee, Ga-Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2018-06-01</date><risdate>2018</risdate><volume>57</volume><issue>6</issue><spage>06KB01</spage><pages>06KB01-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. 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subjects | Indium Photoelectrons Semiconductor devices Spin coating Thin film transistors Thin films Transistors Ultraviolet radiation Zinc oxide Zinc oxides |
title | Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer |
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