Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers forme...

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Veröffentlicht in:Japanese Journal of Applied Physics 2018-06, Vol.57 (6), p.06KB01
Hauptverfasser: Kim, Yu-Jung, Jeong, Jun-Kyo, Park, Jung-Hyun, Jeong, Byung-Jun, Lee, Hi-Deok, Lee, Ga-Won
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container_issue 6
container_start_page 06KB01
container_title Japanese Journal of Applied Physics
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creator Kim, Yu-Jung
Jeong, Jun-Kyo
Park, Jung-Hyun
Jeong, Byung-Jun
Lee, Hi-Deok
Lee, Ga-Won
description In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently.
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subjects Indium
Photoelectrons
Semiconductor devices
Spin coating
Thin film transistors
Thin films
Transistors
Ultraviolet radiation
Zinc oxide
Zinc oxides
title Selective UV–O^sub 3^ treatment for indium zinc oxide thin film transistors with solution-based multiple active layer
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