Optical in situ monitoring of plasma-enhanced atomic layer deposition process
An optical in situ process monitoring method for the early detection of anomalies in plasma process equipment is presented. Cyclic process steps of precursor treatment and plasma reaction for the deposition of an angstrom-scale film increase their complexity to ensure the process quality. However, a...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2018-06, Vol.57 (6S2), p.6 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 6S2 |
| container_start_page | 6 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 57 |
| creator | Arshad, Muhammad Zeeshan Jo, Kyung Jae Kim, Hyun Gi Hong, Sang Jeen |
| description | An optical in situ process monitoring method for the early detection of anomalies in plasma process equipment is presented. Cyclic process steps of precursor treatment and plasma reaction for the deposition of an angstrom-scale film increase their complexity to ensure the process quality. However, a small deviation in process parameters, for instance, gas flow rate, process temperature, or RF power, may jeopardize the deposited film quality. As a test vehicle for the process monitoring, we have investigated the aluminum-oxide (Al2O3) encapsulation process in plasma-enhanced atomic layer deposition (PEALD) to form a moisture and oxygen diffusion barrier in organic-light emitting diodes (OLEDs). By optical in situ monitoring, we successfully identified the reduction in oxygen flow rates in the reaction steps, which resulted in a 2.67 times increase in the water vapor transmission ratio (WVTR) of the deposited Al2O3 films. Therefore, we are convinced that the suggested in situ monitoring method is useful for the detection of process shifts or drifts that adversely affect PEALD film quality. |
| doi_str_mv | 10.7567/JJAP.57.06JF05 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2166999817</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2166999817</sourcerecordid><originalsourceid>FETCH-LOGICAL-c403t-93bf5f304184d16b9471c1a89543bcaf78f839da93a634fee5dbd037b4a8786c3</originalsourceid><addsrcrecordid>eNp1kM1LwzAYh4MoOKdXzwFvQmfSfDXHMZw6JhPUc0jTRFO6pibdYf-9HR0Iwk4vLzzP-_ED4BajmWBcPKxW87cZEzPEV0vEzsAEEyoyijg7BxOEcpxRmeeX4Cqlemg5o3gCXjdd741uoG9h8v0ObkPr-xB9-wWDg12j01Zntv3WrbEV1H3YegMbvbcRVrYLg-NDC7sYjE3pGlw43SR7c6xT8Ll8_Fg8Z-vN08tivs4MRaTPJCkdcwRRXNAK81JSgQ3WhWSUlEY7UbiCyEpLojmhzlpWlRUioqS6EAU3ZAruxrnD3p-dTb2qwy62w0qVY86llAUWAzUbKRNDStE61UW_1XGvMFKHyNQhMsWEGiMbBPpPML7Xhwf7qH1zWrsfNR-6v0PqWncHiL_nR1B1lTsBn5j8C7WmjAs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2166999817</pqid></control><display><type>article</type><title>Optical in situ monitoring of plasma-enhanced atomic layer deposition process</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Arshad, Muhammad Zeeshan ; Jo, Kyung Jae ; Kim, Hyun Gi ; Hong, Sang Jeen</creator><creatorcontrib>Arshad, Muhammad Zeeshan ; Jo, Kyung Jae ; Kim, Hyun Gi ; Hong, Sang Jeen</creatorcontrib><description>An optical in situ process monitoring method for the early detection of anomalies in plasma process equipment is presented. Cyclic process steps of precursor treatment and plasma reaction for the deposition of an angstrom-scale film increase their complexity to ensure the process quality. However, a small deviation in process parameters, for instance, gas flow rate, process temperature, or RF power, may jeopardize the deposited film quality. As a test vehicle for the process monitoring, we have investigated the aluminum-oxide (Al2O3) encapsulation process in plasma-enhanced atomic layer deposition (PEALD) to form a moisture and oxygen diffusion barrier in organic-light emitting diodes (OLEDs). By optical in situ monitoring, we successfully identified the reduction in oxygen flow rates in the reaction steps, which resulted in a 2.67 times increase in the water vapor transmission ratio (WVTR) of the deposited Al2O3 films. Therefore, we are convinced that the suggested in situ monitoring method is useful for the detection of process shifts or drifts that adversely affect PEALD film quality.</description><identifier>ISSN: 0021-4922</identifier><identifier>ISSN: 1347-4065</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.57.06JF05</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: The Japan Society of Applied Physics</publisher><subject>Aluminum oxide ; Anomalies ; Atomic layer epitaxy ; Diffusion barriers ; Diffusion layers ; Flow velocity ; Gas flow ; Monitoring ; Organic light emitting diodes ; Plasma ; Process parameters ; Test vehicles ; Water vapor</subject><ispartof>Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S2), p.6</ispartof><rights>2018 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Jun 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-93bf5f304184d16b9471c1a89543bcaf78f839da93a634fee5dbd037b4a8786c3</citedby><cites>FETCH-LOGICAL-c403t-93bf5f304184d16b9471c1a89543bcaf78f839da93a634fee5dbd037b4a8786c3</cites><orcidid>0000-0003-4398-0021 ; 0000-0024-0173-497X ; 0000-0003-4397-270X ; 0000-0002-6576-690X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.57.06JF05/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27922,27923,53844,53891</link.rule.ids></links><search><creatorcontrib>Arshad, Muhammad Zeeshan</creatorcontrib><creatorcontrib>Jo, Kyung Jae</creatorcontrib><creatorcontrib>Kim, Hyun Gi</creatorcontrib><creatorcontrib>Hong, Sang Jeen</creatorcontrib><title>Optical in situ monitoring of plasma-enhanced atomic layer deposition process</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>An optical in situ process monitoring method for the early detection of anomalies in plasma process equipment is presented. Cyclic process steps of precursor treatment and plasma reaction for the deposition of an angstrom-scale film increase their complexity to ensure the process quality. However, a small deviation in process parameters, for instance, gas flow rate, process temperature, or RF power, may jeopardize the deposited film quality. As a test vehicle for the process monitoring, we have investigated the aluminum-oxide (Al2O3) encapsulation process in plasma-enhanced atomic layer deposition (PEALD) to form a moisture and oxygen diffusion barrier in organic-light emitting diodes (OLEDs). By optical in situ monitoring, we successfully identified the reduction in oxygen flow rates in the reaction steps, which resulted in a 2.67 times increase in the water vapor transmission ratio (WVTR) of the deposited Al2O3 films. Therefore, we are convinced that the suggested in situ monitoring method is useful for the detection of process shifts or drifts that adversely affect PEALD film quality.</description><subject>Aluminum oxide</subject><subject>Anomalies</subject><subject>Atomic layer epitaxy</subject><subject>Diffusion barriers</subject><subject>Diffusion layers</subject><subject>Flow velocity</subject><subject>Gas flow</subject><subject>Monitoring</subject><subject>Organic light emitting diodes</subject><subject>Plasma</subject><subject>Process parameters</subject><subject>Test vehicles</subject><subject>Water vapor</subject><issn>0021-4922</issn><issn>1347-4065</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kM1LwzAYh4MoOKdXzwFvQmfSfDXHMZw6JhPUc0jTRFO6pibdYf-9HR0Iwk4vLzzP-_ED4BajmWBcPKxW87cZEzPEV0vEzsAEEyoyijg7BxOEcpxRmeeX4Cqlemg5o3gCXjdd741uoG9h8v0ObkPr-xB9-wWDg12j01Zntv3WrbEV1H3YegMbvbcRVrYLg-NDC7sYjE3pGlw43SR7c6xT8Ll8_Fg8Z-vN08tivs4MRaTPJCkdcwRRXNAK81JSgQ3WhWSUlEY7UbiCyEpLojmhzlpWlRUioqS6EAU3ZAruxrnD3p-dTb2qwy62w0qVY86llAUWAzUbKRNDStE61UW_1XGvMFKHyNQhMsWEGiMbBPpPML7Xhwf7qH1zWrsfNR-6v0PqWncHiL_nR1B1lTsBn5j8C7WmjAs</recordid><startdate>20180601</startdate><enddate>20180601</enddate><creator>Arshad, Muhammad Zeeshan</creator><creator>Jo, Kyung Jae</creator><creator>Kim, Hyun Gi</creator><creator>Hong, Sang Jeen</creator><general>The Japan Society of Applied Physics</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4398-0021</orcidid><orcidid>https://orcid.org/0000-0024-0173-497X</orcidid><orcidid>https://orcid.org/0000-0003-4397-270X</orcidid><orcidid>https://orcid.org/0000-0002-6576-690X</orcidid></search><sort><creationdate>20180601</creationdate><title>Optical in situ monitoring of plasma-enhanced atomic layer deposition process</title><author>Arshad, Muhammad Zeeshan ; Jo, Kyung Jae ; Kim, Hyun Gi ; Hong, Sang Jeen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-93bf5f304184d16b9471c1a89543bcaf78f839da93a634fee5dbd037b4a8786c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Aluminum oxide</topic><topic>Anomalies</topic><topic>Atomic layer epitaxy</topic><topic>Diffusion barriers</topic><topic>Diffusion layers</topic><topic>Flow velocity</topic><topic>Gas flow</topic><topic>Monitoring</topic><topic>Organic light emitting diodes</topic><topic>Plasma</topic><topic>Process parameters</topic><topic>Test vehicles</topic><topic>Water vapor</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Arshad, Muhammad Zeeshan</creatorcontrib><creatorcontrib>Jo, Kyung Jae</creatorcontrib><creatorcontrib>Kim, Hyun Gi</creatorcontrib><creatorcontrib>Hong, Sang Jeen</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Arshad, Muhammad Zeeshan</au><au>Jo, Kyung Jae</au><au>Kim, Hyun Gi</au><au>Hong, Sang Jeen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical in situ monitoring of plasma-enhanced atomic layer deposition process</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2018-06-01</date><risdate>2018</risdate><volume>57</volume><issue>6S2</issue><spage>6</spage><pages>6-</pages><issn>0021-4922</issn><issn>1347-4065</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>An optical in situ process monitoring method for the early detection of anomalies in plasma process equipment is presented. Cyclic process steps of precursor treatment and plasma reaction for the deposition of an angstrom-scale film increase their complexity to ensure the process quality. However, a small deviation in process parameters, for instance, gas flow rate, process temperature, or RF power, may jeopardize the deposited film quality. As a test vehicle for the process monitoring, we have investigated the aluminum-oxide (Al2O3) encapsulation process in plasma-enhanced atomic layer deposition (PEALD) to form a moisture and oxygen diffusion barrier in organic-light emitting diodes (OLEDs). By optical in situ monitoring, we successfully identified the reduction in oxygen flow rates in the reaction steps, which resulted in a 2.67 times increase in the water vapor transmission ratio (WVTR) of the deposited Al2O3 films. Therefore, we are convinced that the suggested in situ monitoring method is useful for the detection of process shifts or drifts that adversely affect PEALD film quality.</abstract><cop>Tokyo</cop><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.57.06JF05</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-4398-0021</orcidid><orcidid>https://orcid.org/0000-0024-0173-497X</orcidid><orcidid>https://orcid.org/0000-0003-4397-270X</orcidid><orcidid>https://orcid.org/0000-0002-6576-690X</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S2), p.6 |
| issn | 0021-4922 1347-4065 1347-4065 |
| language | eng |
| recordid | cdi_proquest_journals_2166999817 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Aluminum oxide Anomalies Atomic layer epitaxy Diffusion barriers Diffusion layers Flow velocity Gas flow Monitoring Organic light emitting diodes Plasma Process parameters Test vehicles Water vapor |
| title | Optical in situ monitoring of plasma-enhanced atomic layer deposition process |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T09%3A52%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20in%20situ%20monitoring%20of%20plasma-enhanced%20atomic%20layer%20deposition%20process&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Arshad,%20Muhammad%20Zeeshan&rft.date=2018-06-01&rft.volume=57&rft.issue=6S2&rft.spage=6&rft.pages=6-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.7567/JJAP.57.06JF05&rft_dat=%3Cproquest_cross%3E2166999817%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2166999817&rft_id=info:pmid/&rfr_iscdi=true |