Effects of oxygen ion implantation on single-crystalline MgB2 thin films
We studied the effects of oxygen (O) ion irradiation on superconducting properties of single-crystalline MgB2 thin films with various thicknesses (130, 410, 850, and 1300 nm). Low irradiation energy was used to implant ions into the films. The correlation thickness of the top-implanted layer and the...
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creator | Pham, Duong Jung, Soon-Gil Tran, Duc H. Park, Tuson Kang, Won Nam |
description | We studied the effects of oxygen (O) ion irradiation on superconducting properties of single-crystalline MgB2 thin films with various thicknesses (130, 410, 850, and 1300 nm). Low irradiation energy was used to implant ions into the films. The correlation thickness of the top-implanted layer and the thickness of the bottom-clean layer could be adjusted by controlling irradiating energy. An interesting exponential dependence of Tc on the thickness ratio of these layers was found possibly due to the conventional proximity effect. The MgO, which is known as an effective pinning source for MgB2, was induced in implanted films. Thus, despite the use of low irradiation energy, the field performance critical current density, Jc(H), was significantly improved in most cases of irradiated films. The pinning force density (Fp) showed a crossover from surface pinning to a normal point pinning mechanism. These results indicate that the superconducting and the pinning mechanism in single-crystalline MgB2 could be well managed by the oxygen ion implantation. |
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Low irradiation energy was used to implant ions into the films. The correlation thickness of the top-implanted layer and the thickness of the bottom-clean layer could be adjusted by controlling irradiating energy. An interesting exponential dependence of Tc on the thickness ratio of these layers was found possibly due to the conventional proximity effect. The MgO, which is known as an effective pinning source for MgB2, was induced in implanted films. Thus, despite the use of low irradiation energy, the field performance critical current density, Jc(H), was significantly improved in most cases of irradiated films. The pinning force density (Fp) showed a crossover from surface pinning to a normal point pinning mechanism. These results indicate that the superconducting and the pinning mechanism in single-crystalline MgB2 could be well managed by the oxygen ion implantation.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5061772</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Borides ; Clean energy ; Critical current density ; Crossovers ; Crystal structure ; Crystallinity ; Dependence ; Ion implantation ; Ion irradiation ; Magnesium compounds ; Oxygen ions ; Pinning ; Proximity effect (electricity) ; Single crystals ; Superconductivity ; Thickness ratio ; Thin films</subject><ispartof>Journal of applied physics, 2019-01, Vol.125 (2)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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Low irradiation energy was used to implant ions into the films. The correlation thickness of the top-implanted layer and the thickness of the bottom-clean layer could be adjusted by controlling irradiating energy. An interesting exponential dependence of Tc on the thickness ratio of these layers was found possibly due to the conventional proximity effect. The MgO, which is known as an effective pinning source for MgB2, was induced in implanted films. Thus, despite the use of low irradiation energy, the field performance critical current density, Jc(H), was significantly improved in most cases of irradiated films. The pinning force density (Fp) showed a crossover from surface pinning to a normal point pinning mechanism. These results indicate that the superconducting and the pinning mechanism in single-crystalline MgB2 could be well managed by the oxygen ion implantation.</description><subject>Applied physics</subject><subject>Borides</subject><subject>Clean energy</subject><subject>Critical current density</subject><subject>Crossovers</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Dependence</subject><subject>Ion implantation</subject><subject>Ion irradiation</subject><subject>Magnesium compounds</subject><subject>Oxygen ions</subject><subject>Pinning</subject><subject>Proximity effect (electricity)</subject><subject>Single crystals</subject><subject>Superconductivity</subject><subject>Thickness ratio</subject><subject>Thin films</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqd0EtLAzEQAOAgCtbqwX-w4ElhaybZvI5a6gMqXvQcYjapW7abNUnF_nu3bMG7MMMw8DHDDEKXgGeAOb2FGcMchCBHaAJYqlIwho_RBGMCpVRCnaKzlNYYA0iqJuhp4b2zORXBF-Fnt3Jd0YQhN31rumzyvhkiNd2qdaWNu5RN2zadK15W96TIn01X-KbdpHN04k2b3MWhTtH7w-Jt_lQuXx-f53fL0lJCc2md4NYYxbGiTgFYbuvKWcmor4iQpKKmtkJQxwnY6sMbboXElNWV4pwxRafoapzbx_C1dSnrddjGblipCXAmhQTKBnU9KhtDStF53cdmY-JOA9b7R2nQh0cN9ma0yTbjxf_D3yH-Qd3Xnv4CimJ1eg</recordid><startdate>20190114</startdate><enddate>20190114</enddate><creator>Pham, Duong</creator><creator>Jung, Soon-Gil</creator><creator>Tran, Duc H.</creator><creator>Park, Tuson</creator><creator>Kang, Won Nam</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6517-0543</orcidid></search><sort><creationdate>20190114</creationdate><title>Effects of oxygen ion implantation on single-crystalline MgB2 thin films</title><author>Pham, Duong ; Jung, Soon-Gil ; Tran, Duc H. ; Park, Tuson ; Kang, Won Nam</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-ce76caa96093e911c6cd4ec853f4278243adc773e621c4bfa6c78035d49665593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Borides</topic><topic>Clean energy</topic><topic>Critical current density</topic><topic>Crossovers</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Dependence</topic><topic>Ion implantation</topic><topic>Ion irradiation</topic><topic>Magnesium compounds</topic><topic>Oxygen ions</topic><topic>Pinning</topic><topic>Proximity effect (electricity)</topic><topic>Single crystals</topic><topic>Superconductivity</topic><topic>Thickness ratio</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pham, Duong</creatorcontrib><creatorcontrib>Jung, Soon-Gil</creatorcontrib><creatorcontrib>Tran, Duc H.</creatorcontrib><creatorcontrib>Park, Tuson</creatorcontrib><creatorcontrib>Kang, Won Nam</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pham, Duong</au><au>Jung, Soon-Gil</au><au>Tran, Duc H.</au><au>Park, Tuson</au><au>Kang, Won Nam</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of oxygen ion implantation on single-crystalline MgB2 thin films</atitle><jtitle>Journal of applied physics</jtitle><date>2019-01-14</date><risdate>2019</risdate><volume>125</volume><issue>2</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We studied the effects of oxygen (O) ion irradiation on superconducting properties of single-crystalline MgB2 thin films with various thicknesses (130, 410, 850, and 1300 nm). Low irradiation energy was used to implant ions into the films. The correlation thickness of the top-implanted layer and the thickness of the bottom-clean layer could be adjusted by controlling irradiating energy. An interesting exponential dependence of Tc on the thickness ratio of these layers was found possibly due to the conventional proximity effect. The MgO, which is known as an effective pinning source for MgB2, was induced in implanted films. Thus, despite the use of low irradiation energy, the field performance critical current density, Jc(H), was significantly improved in most cases of irradiated films. The pinning force density (Fp) showed a crossover from surface pinning to a normal point pinning mechanism. These results indicate that the superconducting and the pinning mechanism in single-crystalline MgB2 could be well managed by the oxygen ion implantation.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5061772</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-6517-0543</orcidid></addata></record> |
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subjects | Applied physics Borides Clean energy Critical current density Crossovers Crystal structure Crystallinity Dependence Ion implantation Ion irradiation Magnesium compounds Oxygen ions Pinning Proximity effect (electricity) Single crystals Superconductivity Thickness ratio Thin films |
title | Effects of oxygen ion implantation on single-crystalline MgB2 thin films |
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