Tuning valence electron concentration in the Mo13Ge23-Ru2Ge3 pseudobinary system for enhancement of the thermoelectric properties
Nowotny Chimney-Ladder (NCL) compounds are attracting increased attention as good thermoelectric (TE) materials. Although the TE properties of Si-based NCL compounds such as higher manganese silicides are well investigated, those of Ge-based ones are scarcely studied. Here, we demonstrate that a ser...
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| Veröffentlicht in: | Journal of applied physics 2019-01, Vol.125 (2) |
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| creator | Sasaki, Takayuki Kuwahara, Shimpei Ohishi, Yuji Muta, Hiroaki Kurosaki, Ken |
| description | Nowotny Chimney-Ladder (NCL) compounds are attracting increased attention as good thermoelectric (TE) materials. Although the TE properties of Si-based NCL compounds such as higher manganese silicides are well investigated, those of Ge-based ones are scarcely studied. Here, we demonstrate that a series of the Ge-based NCL compounds in the Mo13Ge23-Ru2Ge3 pseudobinary system, i.e., Mo1-xRuxGe1.769, shows quite low lattice thermal conductivity as well as good electrical properties like a material called phonon-glass electron-crystal and thus it shows good TE properties. By tuning the valence electron concentration, the TE properties are optimized and the maximum zT, called materials dimensionless figure of merit, reaches 0.23 for x = 0.6 in Mo1-xRuxGe1.769, which is approximately 15 times higher than that of x = 0 in Mo1-xRuxGe1.769, i.e., Mo13Ge23. |
| doi_str_mv | 10.1063/1.5065417 |
| format | Article |
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Although the TE properties of Si-based NCL compounds such as higher manganese silicides are well investigated, those of Ge-based ones are scarcely studied. Here, we demonstrate that a series of the Ge-based NCL compounds in the Mo13Ge23-Ru2Ge3 pseudobinary system, i.e., Mo1-xRuxGe1.769, shows quite low lattice thermal conductivity as well as good electrical properties like a material called phonon-glass electron-crystal and thus it shows good TE properties. By tuning the valence electron concentration, the TE properties are optimized and the maximum zT, called materials dimensionless figure of merit, reaches 0.23 for x = 0.6 in Mo1-xRuxGe1.769, which is approximately 15 times higher than that of x = 0 in Mo1-xRuxGe1.769, i.e., Mo13Ge23.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.5065417</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Electrical properties ; Electrical resistivity ; Electrons ; Figure of merit ; Intermetallic compounds ; Manganese silicide ; Silicon compounds ; Thermal conductivity ; Thermoelectric materials ; Tuning</subject><ispartof>Journal of applied physics, 2019-01, Vol.125 (2)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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Although the TE properties of Si-based NCL compounds such as higher manganese silicides are well investigated, those of Ge-based ones are scarcely studied. Here, we demonstrate that a series of the Ge-based NCL compounds in the Mo13Ge23-Ru2Ge3 pseudobinary system, i.e., Mo1-xRuxGe1.769, shows quite low lattice thermal conductivity as well as good electrical properties like a material called phonon-glass electron-crystal and thus it shows good TE properties. By tuning the valence electron concentration, the TE properties are optimized and the maximum zT, called materials dimensionless figure of merit, reaches 0.23 for x = 0.6 in Mo1-xRuxGe1.769, which is approximately 15 times higher than that of x = 0 in Mo1-xRuxGe1.769, i.e., Mo13Ge23.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5065417</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3015-3206</orcidid></addata></record> |
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| subjects | Applied physics Electrical properties Electrical resistivity Electrons Figure of merit Intermetallic compounds Manganese silicide Silicon compounds Thermal conductivity Thermoelectric materials Tuning |
| title | Tuning valence electron concentration in the Mo13Ge23-Ru2Ge3 pseudobinary system for enhancement of the thermoelectric properties |
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