Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps

The microscopic structural and optical characteristics of AlGaN-based light-emitting diodes grown on AlN templates with macrosteps were evaluated. Cross-sectional transmission electron microscopy in the high-angle annular dark field scanning mode and microscopic energy dispersive X-ray spectroscopy...

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Veröffentlicht in:	Applied physics letters 2019-01, Vol.114 (1)
Hauptverfasser:	Kojima, K., Nagasawa, Y., Hirano, A., Ippommatsu, M., Honda, Y., Amano, H., Akasaki, I., Chichibu, S. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Aluminum nitride Applied physics Cathodoluminescence Cladding Diodes Energy dispersive X ray spectroscopy Inhomogeneity Localization Optical properties Organic light emitting diodes Quantum efficiency Quantum wells Spectrum analysis Transmission electron microscopy
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