Plasma Based Synthesis of Nanomaterials for Development of Plasmon Enhanced Infrared Responsive Optoelectronic Device
We report plasma based fabrication of an optoelectronic device with plasmon enhanced infrared sensitivity realized by integrating plasmonic gold nanoparticles (Au NPs) with an organic semiconductor matrix. A blend of plasma polymerized aniline (PPA)-Rubrene, prepared by a novel plasma based method a...
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| Veröffentlicht in: | Plasma chemistry and plasma processing 2019-01, Vol.39 (1), p.277-292 |
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| container_title | Plasma chemistry and plasma processing |
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| creator | Gogoi, Deepshikha Hussain, Amreen A. Pal, Arup R. |
| description | We report plasma based fabrication of an optoelectronic device with plasmon enhanced infrared sensitivity realized by integrating plasmonic gold nanoparticles (Au NPs) with an organic semiconductor matrix. A blend of plasma polymerized aniline (PPA)-Rubrene, prepared by a novel plasma based method acts as the semiconductor matrix for charge transport in the device geometry. Significantly improved photovoltaic property of the device with an open circuit voltage (V
OC
) of 1.08 V is obtained with the addition of Au NPs in the device. We experimentally demonstrate very efficient plasmon generated charge transfer between Au NPs and PPA-Rubrene system leading to significant enhancement of infrared responsivity of 2200% at the plasmon absorption band of Au. This study demonstrates how plasma based processes can be utilized to prepare plasmonic nano-materials and also to synthesize organic semiconductor materials suitable for development of plasmonic charge generating devices responsive to infrared region of the electromagnetic spectrum. |
| doi_str_mv | 10.1007/s11090-018-9945-8 |
| format | Article |
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OC
) of 1.08 V is obtained with the addition of Au NPs in the device. We experimentally demonstrate very efficient plasmon generated charge transfer between Au NPs and PPA-Rubrene system leading to significant enhancement of infrared responsivity of 2200% at the plasmon absorption band of Au. This study demonstrates how plasma based processes can be utilized to prepare plasmonic nano-materials and also to synthesize organic semiconductor materials suitable for development of plasmonic charge generating devices responsive to infrared region of the electromagnetic spectrum.</description><identifier>ISSN: 0272-4324</identifier><identifier>EISSN: 1572-8986</identifier><identifier>DOI: 10.1007/s11090-018-9945-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Absorption spectra ; Aniline ; Characterization and Evaluation of Materials ; Charge transport ; Chemistry ; Chemistry and Materials Science ; Classical Mechanics ; Gold ; Infrared radiation ; Inorganic Chemistry ; Mechanical Engineering ; Nanomaterials ; Nanoparticles ; Open circuit voltage ; Optoelectronic devices ; Original Paper ; Plasma ; Semiconductor materials ; Sensitivity enhancement</subject><ispartof>Plasma chemistry and plasma processing, 2019-01, Vol.39 (1), p.277-292</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Copyright Springer Science & Business Media 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-5bc4377491d9b674581a570bcd04585f59536cf859621e68413926c0a1acd6793</citedby><cites>FETCH-LOGICAL-c353t-5bc4377491d9b674581a570bcd04585f59536cf859621e68413926c0a1acd6793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11090-018-9945-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11090-018-9945-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Gogoi, Deepshikha</creatorcontrib><creatorcontrib>Hussain, Amreen A.</creatorcontrib><creatorcontrib>Pal, Arup R.</creatorcontrib><title>Plasma Based Synthesis of Nanomaterials for Development of Plasmon Enhanced Infrared Responsive Optoelectronic Device</title><title>Plasma chemistry and plasma processing</title><addtitle>Plasma Chem Plasma Process</addtitle><description>We report plasma based fabrication of an optoelectronic device with plasmon enhanced infrared sensitivity realized by integrating plasmonic gold nanoparticles (Au NPs) with an organic semiconductor matrix. A blend of plasma polymerized aniline (PPA)-Rubrene, prepared by a novel plasma based method acts as the semiconductor matrix for charge transport in the device geometry. Significantly improved photovoltaic property of the device with an open circuit voltage (V
OC
) of 1.08 V is obtained with the addition of Au NPs in the device. We experimentally demonstrate very efficient plasmon generated charge transfer between Au NPs and PPA-Rubrene system leading to significant enhancement of infrared responsivity of 2200% at the plasmon absorption band of Au. This study demonstrates how plasma based processes can be utilized to prepare plasmonic nano-materials and also to synthesize organic semiconductor materials suitable for development of plasmonic charge generating devices responsive to infrared region of the electromagnetic spectrum.</description><subject>Absorption spectra</subject><subject>Aniline</subject><subject>Characterization and Evaluation of Materials</subject><subject>Charge transport</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Gold</subject><subject>Infrared radiation</subject><subject>Inorganic Chemistry</subject><subject>Mechanical Engineering</subject><subject>Nanomaterials</subject><subject>Nanoparticles</subject><subject>Open circuit voltage</subject><subject>Optoelectronic devices</subject><subject>Original Paper</subject><subject>Plasma</subject><subject>Semiconductor materials</subject><subject>Sensitivity enhancement</subject><issn>0272-4324</issn><issn>1572-8986</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kMtOwzAURC0EEqXwAewssQ7YcfxaQilQqaKIx9pyHYemSuxgp5X69zgEiRWrO4s550oDwCVG1xghfhMxRhJlCItMyoJm4ghMMOV5JqRgx2CC8pQLkhen4CzGLUKJInwCdi-Njq2GdzraEr4dXL-xsY7QV_BZO9_q3oZaNxFWPsB7u7eN71rr-qHwg3oH526jnUn4wlVBhxRebey8i_XewlXXe9tY0wfvajMoamPPwUmVpPbi907Bx8P8ffaULVePi9ntMjOEkj6ja1MQzguJS7lmvKACa8rR2pQoZVpRSQkzlaCS5dgyUWAic2aQxtqUjEsyBVejtwv-a2djr7Z-F1x6qXLMkloyiVMLjy0TfIzBVqoLdavDQWGkhnXVuK5K66phXSUSk49MTF33acOf-X_oG6y5fTw</recordid><startdate>20190101</startdate><enddate>20190101</enddate><creator>Gogoi, Deepshikha</creator><creator>Hussain, Amreen A.</creator><creator>Pal, Arup R.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20190101</creationdate><title>Plasma Based Synthesis of Nanomaterials for Development of Plasmon Enhanced Infrared Responsive Optoelectronic Device</title><author>Gogoi, Deepshikha ; Hussain, Amreen A. ; Pal, Arup R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-5bc4377491d9b674581a570bcd04585f59536cf859621e68413926c0a1acd6793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Absorption spectra</topic><topic>Aniline</topic><topic>Characterization and Evaluation of Materials</topic><topic>Charge transport</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Classical Mechanics</topic><topic>Gold</topic><topic>Infrared radiation</topic><topic>Inorganic Chemistry</topic><topic>Mechanical Engineering</topic><topic>Nanomaterials</topic><topic>Nanoparticles</topic><topic>Open circuit voltage</topic><topic>Optoelectronic devices</topic><topic>Original Paper</topic><topic>Plasma</topic><topic>Semiconductor materials</topic><topic>Sensitivity enhancement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gogoi, Deepshikha</creatorcontrib><creatorcontrib>Hussain, Amreen A.</creatorcontrib><creatorcontrib>Pal, Arup R.</creatorcontrib><collection>CrossRef</collection><jtitle>Plasma chemistry and plasma processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gogoi, Deepshikha</au><au>Hussain, Amreen A.</au><au>Pal, Arup R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Plasma Based Synthesis of Nanomaterials for Development of Plasmon Enhanced Infrared Responsive Optoelectronic Device</atitle><jtitle>Plasma chemistry and plasma processing</jtitle><stitle>Plasma Chem Plasma Process</stitle><date>2019-01-01</date><risdate>2019</risdate><volume>39</volume><issue>1</issue><spage>277</spage><epage>292</epage><pages>277-292</pages><issn>0272-4324</issn><eissn>1572-8986</eissn><abstract>We report plasma based fabrication of an optoelectronic device with plasmon enhanced infrared sensitivity realized by integrating plasmonic gold nanoparticles (Au NPs) with an organic semiconductor matrix. A blend of plasma polymerized aniline (PPA)-Rubrene, prepared by a novel plasma based method acts as the semiconductor matrix for charge transport in the device geometry. Significantly improved photovoltaic property of the device with an open circuit voltage (V
OC
) of 1.08 V is obtained with the addition of Au NPs in the device. We experimentally demonstrate very efficient plasmon generated charge transfer between Au NPs and PPA-Rubrene system leading to significant enhancement of infrared responsivity of 2200% at the plasmon absorption band of Au. This study demonstrates how plasma based processes can be utilized to prepare plasmonic nano-materials and also to synthesize organic semiconductor materials suitable for development of plasmonic charge generating devices responsive to infrared region of the electromagnetic spectrum.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11090-018-9945-8</doi><tpages>16</tpages></addata></record> |
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| subjects | Absorption spectra Aniline Characterization and Evaluation of Materials Charge transport Chemistry Chemistry and Materials Science Classical Mechanics Gold Infrared radiation Inorganic Chemistry Mechanical Engineering Nanomaterials Nanoparticles Open circuit voltage Optoelectronic devices Original Paper Plasma Semiconductor materials Sensitivity enhancement |
| title | Plasma Based Synthesis of Nanomaterials for Development of Plasmon Enhanced Infrared Responsive Optoelectronic Device |
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