Spin-dependent giant junction magnetoresistance in simple Fe/p-Si(001) Schottky heretrojunction at low temperature
We report on the giant junction magnetoresistance observed at low temperature in Fe/p-Si Schottky heterojunction. The device shows good rectifying characteristics at room temperature and a dual—Schottky as well as magnetic diode—characteristics at low temperature, below 50 K. Formation of a magnetic...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2019, Vol.125 (1), p.1-9, Article 60 |
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| creator | Sarkar, Anirban Adhikari, Rajdeep Das, Amal Kumar |
| description | We report on the giant junction magnetoresistance observed at low temperature in Fe/p-Si Schottky heterojunction. The device shows good rectifying characteristics at room temperature and a dual—Schottky as well as magnetic diode—characteristics at low temperature, below 50 K. Formation of a magnetic field-dependent potential barrier due to electrical injection of spin-polarized carriers from the ferromagnetic electrode into the semiconductor is speculated to result in such large junction resistance. The magnetoresistance value is of the order of
10
4
%
at 10 K and saturates at
∼
0.5
kOe
, showing dual functionality—working as a magnetic diode as well as a magnetoresistive element. |
| doi_str_mv | 10.1007/s00339-018-2360-4 |
| format | Article |
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10
4
%
at 10 K and saturates at
∼
0.5
kOe
, showing dual functionality—working as a magnetic diode as well as a magnetoresistive element.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-018-2360-4</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Ferromagnetism ; Heterojunctions ; Low temperature ; Machines ; Magnetoresistance ; Magnetoresistivity ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Potential barriers ; Processes ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2019, Vol.125 (1), p.1-9, Article 60</ispartof><rights>Springer-Verlag GmbH Germany, part of Springer Nature 2019</rights><rights>Copyright Springer Science & Business Media 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-14c3f03a02a95d8f0b4a659cf1cd04c119d9038db1dae30baa722dbac49cfb7b3</citedby><cites>FETCH-LOGICAL-c316t-14c3f03a02a95d8f0b4a659cf1cd04c119d9038db1dae30baa722dbac49cfb7b3</cites><orcidid>0000-0002-2744-0378</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-018-2360-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-018-2360-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Sarkar, Anirban</creatorcontrib><creatorcontrib>Adhikari, Rajdeep</creatorcontrib><creatorcontrib>Das, Amal Kumar</creatorcontrib><title>Spin-dependent giant junction magnetoresistance in simple Fe/p-Si(001) Schottky heretrojunction at low temperature</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>We report on the giant junction magnetoresistance observed at low temperature in Fe/p-Si Schottky heterojunction. The device shows good rectifying characteristics at room temperature and a dual—Schottky as well as magnetic diode—characteristics at low temperature, below 50 K. Formation of a magnetic field-dependent potential barrier due to electrical injection of spin-polarized carriers from the ferromagnetic electrode into the semiconductor is speculated to result in such large junction resistance. The magnetoresistance value is of the order of
10
4
%
at 10 K and saturates at
∼
0.5
kOe
, showing dual functionality—working as a magnetic diode as well as a magnetoresistive element.</description><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Ferromagnetism</subject><subject>Heterojunctions</subject><subject>Low temperature</subject><subject>Machines</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Potential barriers</subject><subject>Processes</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAQhi0EEqXwA9gsscBgev5oPkZUUUCqxFCYLce5tCmNE2xHqP-eVEEwccPd8rzvSQ8h1xzuOUA6CwBS5gx4xoRMgKkTMuFKCgaJhFMygVylLJN5ck4uQtjBMEqICfHrrnasxA5diS7STW2GveudjXXraGM2DmPrMdQhGmeR1o6Guun2SJc469i6vgXgd3Rtt22MHwe6RY_Rt78NJtJ9-0UjNh16E3uPl-SsMvuAVz93St6Xj2-LZ7Z6fXpZPKyYlTyJjCsrK5AGhMnnZVZBoUwyz23FbQnKcp6XOcisLHhpUEJhTCpEWRirBqZICzklN2Nv59vPHkPUu7b3bnipBU9ExkWSqYHiI2V9G4LHSne-bow_aA76qFaPavWgVh_V6mNGjJkwsG6D_q_5_9A3B3J90w</recordid><startdate>2019</startdate><enddate>2019</enddate><creator>Sarkar, Anirban</creator><creator>Adhikari, Rajdeep</creator><creator>Das, Amal Kumar</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-2744-0378</orcidid></search><sort><creationdate>2019</creationdate><title>Spin-dependent giant junction magnetoresistance in simple Fe/p-Si(001) Schottky heretrojunction at low temperature</title><author>Sarkar, Anirban ; Adhikari, Rajdeep ; Das, Amal Kumar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-14c3f03a02a95d8f0b4a659cf1cd04c119d9038db1dae30baa722dbac49cfb7b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Ferromagnetism</topic><topic>Heterojunctions</topic><topic>Low temperature</topic><topic>Machines</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Potential barriers</topic><topic>Processes</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarkar, Anirban</creatorcontrib><creatorcontrib>Adhikari, Rajdeep</creatorcontrib><creatorcontrib>Das, Amal Kumar</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sarkar, Anirban</au><au>Adhikari, Rajdeep</au><au>Das, Amal Kumar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin-dependent giant junction magnetoresistance in simple Fe/p-Si(001) Schottky heretrojunction at low temperature</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2019</date><risdate>2019</risdate><volume>125</volume><issue>1</issue><spage>1</spage><epage>9</epage><pages>1-9</pages><artnum>60</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>We report on the giant junction magnetoresistance observed at low temperature in Fe/p-Si Schottky heterojunction. The device shows good rectifying characteristics at room temperature and a dual—Schottky as well as magnetic diode—characteristics at low temperature, below 50 K. Formation of a magnetic field-dependent potential barrier due to electrical injection of spin-polarized carriers from the ferromagnetic electrode into the semiconductor is speculated to result in such large junction resistance. The magnetoresistance value is of the order of
10
4
%
at 10 K and saturates at
∼
0.5
kOe
, showing dual functionality—working as a magnetic diode as well as a magnetoresistive element.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-018-2360-4</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-2744-0378</orcidid></addata></record> |
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| source | SpringerNature Journals |
| subjects | Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Ferromagnetism Heterojunctions Low temperature Machines Magnetoresistance Magnetoresistivity Manufacturing Materials science Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Potential barriers Processes Surfaces and Interfaces Thin Films |
| title | Spin-dependent giant junction magnetoresistance in simple Fe/p-Si(001) Schottky heretrojunction at low temperature |
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