Magnetic domain writing defined by electrical gating in Pt/Co film
There is a need to control magnetic properties at a desired location in a magnetic film towards a realization of fundamental devices, such as domain wall logic or magnonic applications. Here, we demonstrate the formation of a magnetic domain structure at a desired location in a Pt/Co film, using ele...
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| Veröffentlicht in: | Applied physics letters 2018-12, Vol.113 (25) |
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| container_issue | 25 |
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| container_title | Applied physics letters |
| container_volume | 113 |
| creator | Ando, Fuyuki Ishibashi, Mio Koyama, Tomohiro Shiota, Yoichi Moriyama, Takahiro Chiba, Daichi Ono, Teruo |
| description | There is a need to control magnetic properties at a desired location in a magnetic film towards a realization of fundamental devices, such as domain wall logic or magnonic applications. Here, we demonstrate the formation of a magnetic domain structure at a desired location in a Pt/Co film, using electrical gating with a meshed gate electrode and sweeping the applied magnetic field. As the magnetic properties can be changed by modulating the electron density at the surface of the Co layer, this method in principle provides higher speed and power-efficient operation in inducing a nanoscale domain structure or in configuring a volatile magnonic crystal. |
| doi_str_mv | 10.1063/1.5078553 |
| format | Article |
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| ispartof | Applied physics letters, 2018-12, Vol.113 (25) |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Cobalt Crystal structure Domain walls Electron density Magnetic domains Magnetic films Magnetic properties Magnetism |
| title | Magnetic domain writing defined by electrical gating in Pt/Co film |
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