Correlated Variation of Electrical Characteristics of a Thin-Film Field-Effect Transistor during Modification of the Physical Properties of an InZnO:N Oxide Semiconductor Channel

We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on...

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Veröffentlicht in:	Technical physics letters 2018-10, Vol.44 (10), p.946-948
Hauptverfasser:	Cheremisin, A. B., Kuldin, N. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Classical and Continuum Physics Current voltage characteristics Field effect transistors Parameter modification Physical properties Physics Physics and Astronomy Semiconductor devices Thin film transistors Transistors
Online-Zugang:	Volltext
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