Correlated Variation of Electrical Characteristics of a Thin-Film Field-Effect Transistor during Modification of the Physical Properties of an InZnO:N Oxide Semiconductor Channel
We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on...
Gespeichert in:
| Veröffentlicht in: | Technical physics letters 2018-10, Vol.44 (10), p.946-948 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 948 |
|---|---|
| container_issue | 10 |
| container_start_page | 946 |
| container_title | Technical physics letters |
| container_volume | 44 |
| creator | Cheremisin, A. B. Kuldin, N. A. |
| description | We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on the phenomenon of photoinduced charge accumulation in the semiconductor. It is established that the slopes and intercepts of the capacitance–voltage (
C
G
–
V
G
) and transmission (
I
D
–
V
G
) curves of the TFT under illumination exhibit correlated similar variations. The obtained results justify joint use of the
C
G
–
V
G
and
I
D
–
V
G
curves in the analysis of peculiarities of the energy band structure of oxide semiconductors. |
| doi_str_mv | 10.1134/S1063785018100188 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2156961642</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2156961642</sourcerecordid><originalsourceid>FETCH-LOGICAL-c268t-f28e5b2cd0e4324805514e7656498a1196b0a0c306d7b93317fcfab64043be653</originalsourceid><addsrcrecordid>eNp1kcFOwzAMhisEEjB4AG6ROBeSps1abmjaAAkY0gYHLlWaOixTlwwnk-C1eEJSBuKAuNiW_P-fLTtJThg9Y4zn5zNGBR-WBWUlozGUO8kBoxVNRcH5bl8Lnvb9_eTQ-yWltMyK6iD5GDlE6GSAljxJNDIYZ4nTZNyBCmiU7MhoIVGqAGh8MMr3XUnmC2PTielWZGKga9Ox1tFA5iitjzqHpN2gsS_kzrVGR84POCyAPCze_Rf6Ad0aMBjYUi25sc92enFPpm-mBTKDlVHOthvVA-Me1kJ3lOxp2Xk4_s6D5HEyno-u09vp1c3o8jZVmShDqrMSiiZTLYWcZ3lJi4LlMBSFyKtSMlaJhkqqOBXtsKk4Z0OttGxETnPeQDzbIDndctfoXjfgQ710G7RxZJ2xQlSCiTyLKrZVKXTeI-h6jWYl8b1mtO5fU_95TfRkW49f9ycC_CX_b_oEerOR5Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2156961642</pqid></control><display><type>article</type><title>Correlated Variation of Electrical Characteristics of a Thin-Film Field-Effect Transistor during Modification of the Physical Properties of an InZnO:N Oxide Semiconductor Channel</title><source>SpringerLink Journals - AutoHoldings</source><creator>Cheremisin, A. B. ; Kuldin, N. A.</creator><creatorcontrib>Cheremisin, A. B. ; Kuldin, N. A.</creatorcontrib><description>We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on the phenomenon of photoinduced charge accumulation in the semiconductor. It is established that the slopes and intercepts of the capacitance–voltage (
C
G
–
V
G
) and transmission (
I
D
–
V
G
) curves of the TFT under illumination exhibit correlated similar variations. The obtained results justify joint use of the
C
G
–
V
G
and
I
D
–
V
G
curves in the analysis of peculiarities of the energy band structure of oxide semiconductors.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785018100188</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Classical and Continuum Physics ; Current voltage characteristics ; Field effect transistors ; Parameter modification ; Physical properties ; Physics ; Physics and Astronomy ; Semiconductor devices ; Thin film transistors ; Transistors</subject><ispartof>Technical physics letters, 2018-10, Vol.44 (10), p.946-948</ispartof><rights>Pleiades Publishing, Ltd. 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-f28e5b2cd0e4324805514e7656498a1196b0a0c306d7b93317fcfab64043be653</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063785018100188$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063785018100188$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids></links><search><creatorcontrib>Cheremisin, A. B.</creatorcontrib><creatorcontrib>Kuldin, N. A.</creatorcontrib><title>Correlated Variation of Electrical Characteristics of a Thin-Film Field-Effect Transistor during Modification of the Physical Properties of an InZnO:N Oxide Semiconductor Channel</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on the phenomenon of photoinduced charge accumulation in the semiconductor. It is established that the slopes and intercepts of the capacitance–voltage (
C
G
–
V
G
) and transmission (
I
D
–
V
G
) curves of the TFT under illumination exhibit correlated similar variations. The obtained results justify joint use of the
C
G
–
V
G
and
I
D
–
V
G
curves in the analysis of peculiarities of the energy band structure of oxide semiconductors.</description><subject>Classical and Continuum Physics</subject><subject>Current voltage characteristics</subject><subject>Field effect transistors</subject><subject>Parameter modification</subject><subject>Physical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>Transistors</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kcFOwzAMhisEEjB4AG6ROBeSps1abmjaAAkY0gYHLlWaOixTlwwnk-C1eEJSBuKAuNiW_P-fLTtJThg9Y4zn5zNGBR-WBWUlozGUO8kBoxVNRcH5bl8Lnvb9_eTQ-yWltMyK6iD5GDlE6GSAljxJNDIYZ4nTZNyBCmiU7MhoIVGqAGh8MMr3XUnmC2PTielWZGKga9Ox1tFA5iitjzqHpN2gsS_kzrVGR84POCyAPCze_Rf6Ad0aMBjYUi25sc92enFPpm-mBTKDlVHOthvVA-Me1kJ3lOxp2Xk4_s6D5HEyno-u09vp1c3o8jZVmShDqrMSiiZTLYWcZ3lJi4LlMBSFyKtSMlaJhkqqOBXtsKk4Z0OttGxETnPeQDzbIDndctfoXjfgQ710G7RxZJ2xQlSCiTyLKrZVKXTeI-h6jWYl8b1mtO5fU_95TfRkW49f9ycC_CX_b_oEerOR5Q</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>Cheremisin, A. B.</creator><creator>Kuldin, N. A.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20181001</creationdate><title>Correlated Variation of Electrical Characteristics of a Thin-Film Field-Effect Transistor during Modification of the Physical Properties of an InZnO:N Oxide Semiconductor Channel</title><author>Cheremisin, A. B. ; Kuldin, N. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-f28e5b2cd0e4324805514e7656498a1196b0a0c306d7b93317fcfab64043be653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Classical and Continuum Physics</topic><topic>Current voltage characteristics</topic><topic>Field effect transistors</topic><topic>Parameter modification</topic><topic>Physical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cheremisin, A. B.</creatorcontrib><creatorcontrib>Kuldin, N. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cheremisin, A. B.</au><au>Kuldin, N. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlated Variation of Electrical Characteristics of a Thin-Film Field-Effect Transistor during Modification of the Physical Properties of an InZnO:N Oxide Semiconductor Channel</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2018-10-01</date><risdate>2018</risdate><volume>44</volume><issue>10</issue><spage>946</spage><epage>948</epage><pages>946-948</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on the phenomenon of photoinduced charge accumulation in the semiconductor. It is established that the slopes and intercepts of the capacitance–voltage (
C
G
–
V
G
) and transmission (
I
D
–
V
G
) curves of the TFT under illumination exhibit correlated similar variations. The obtained results justify joint use of the
C
G
–
V
G
and
I
D
–
V
G
curves in the analysis of peculiarities of the energy band structure of oxide semiconductors.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785018100188</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7850 |
| ispartof | Technical physics letters, 2018-10, Vol.44 (10), p.946-948 |
| issn | 1063-7850 1090-6533 |
| language | eng |
| recordid | cdi_proquest_journals_2156961642 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Classical and Continuum Physics Current voltage characteristics Field effect transistors Parameter modification Physical properties Physics Physics and Astronomy Semiconductor devices Thin film transistors Transistors |
| title | Correlated Variation of Electrical Characteristics of a Thin-Film Field-Effect Transistor during Modification of the Physical Properties of an InZnO:N Oxide Semiconductor Channel |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T18%3A34%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Correlated%20Variation%20of%20Electrical%20Characteristics%20of%20a%20Thin-Film%20Field-Effect%20Transistor%20during%20Modification%20of%20the%20Physical%20Properties%20of%20an%20InZnO:N%20Oxide%20Semiconductor%20Channel&rft.jtitle=Technical%20physics%20letters&rft.au=Cheremisin,%20A.%20B.&rft.date=2018-10-01&rft.volume=44&rft.issue=10&rft.spage=946&rft.epage=948&rft.pages=946-948&rft.issn=1063-7850&rft.eissn=1090-6533&rft_id=info:doi/10.1134/S1063785018100188&rft_dat=%3Cproquest_cross%3E2156961642%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2156961642&rft_id=info:pmid/&rfr_iscdi=true |