Tetrahedrite (Cu12Sb4S13) thin films for photovoltaic and thermoelectric applications

•E-beam deposition of Cu12Sb4S13 thin films using mechanically alloyed single source material.•∼40–50 mA e-beam current is found optimal for Cu12Sb4S13 phase formation.•RBS and PIXE studies are used to determine composition of the films.•Optical band gap value of ∼1.8 eV with absorption coefficient...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Solar energy 2018-11, Vol.174, p.422-430
Hauptverfasser:	Prem Kumar, D.S., Ren, Minqin, Osipowicz, Thomas, Mallik, Ramesh Chandra, Malar, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Absorptivity Backscattering Ball milling Beam currents Copper Copper sulfides Diffraction EBPVD Electrical resistivity Electron beams Emission analysis Emission measurements Energy gap Evaporation Maximum power Optical absorption Optical properties P-type semiconductors Photovoltaic cells Photovoltaics Power factor Raman spectroscopy Seebeck effect Solar energy Spectrometry Spectrum analysis Tetrahedrite Thin films Transport properties X-ray diffraction
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!