Tetrahedrite (Cu12Sb4S13) thin films for photovoltaic and thermoelectric applications
•E-beam deposition of Cu12Sb4S13 thin films using mechanically alloyed single source material.•∼40–50 mA e-beam current is found optimal for Cu12Sb4S13 phase formation.•RBS and PIXE studies are used to determine composition of the films.•Optical band gap value of ∼1.8 eV with absorption coefficient...
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| Veröffentlicht in: | Solar energy 2018-11, Vol.174, p.422-430 |
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| creator | Prem Kumar, D.S. Ren, Minqin Osipowicz, Thomas Mallik, Ramesh Chandra Malar, P. |
| description | •E-beam deposition of Cu12Sb4S13 thin films using mechanically alloyed single source material.•∼40–50 mA e-beam current is found optimal for Cu12Sb4S13 phase formation.•RBS and PIXE studies are used to determine composition of the films.•Optical band gap value of ∼1.8 eV with absorption coefficient of ∼105 cm−1 is observed for near stoichiometric films.•Thermoelectric measurements shows the maximum power factor of 2.30 μW/cm-K2 at 495 K for Cu12Sb4S13.
In this paper we have demonstrated the growth of Cu12Sb4S13 thin film through e-beam evaporation from a single source. The source material was pre-synthesised via ball mill method starting from a stoichiometric mixture of elements (Cu, Sb and S) taken in the atomic ratio of 12:4:13. The films were deposited at different beam currents viz. 40, 50 and 60 mA. The bulk material and thin films were studied using X-ray diffraction (XRD) and Raman spectroscopy to evaluate phase formation. The films grown at beam current values of 40 mA showed the presence of Cu12Sb4S13 phase along with Cu3SbS4 and CuS secondary phases. The films grown at 50 mA and 60 mA are showing Cu3SbS4 phase as main phase. These results are in agreement with the Raman studies. The composition of as grown films was analysed using Rutherford backscattered spectrometry (RBS) and proton induced X-ray emission (PIXE) measurements. The Cu content in the films is decreasing with increase in the beam current, whereas the Sb and S content shows increment. The optical absorption measurement was used to determine the optical band gap. The films show a direct band gap value of ∼1.8 eV with an optical absorption coefficient of ∼105 cm−1. Temperature dependant Seebeck coefficient and electrical resistivity values were measured for the thin films and the power factor values were calculated. The positive Seebeck coefficient values obtained indicate p-type semiconducting nature of the films. The maximum power factor of 2.30 μW/cm-K2 at 495 K was obtained for films grown at 40 mA e-beam current. The electrical and optical properties are significantly influenced by the presence of secondary phases and compositional deviation. |
| doi_str_mv | 10.1016/j.solener.2018.08.080 |
| format | Article |
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In this paper we have demonstrated the growth of Cu12Sb4S13 thin film through e-beam evaporation from a single source. The source material was pre-synthesised via ball mill method starting from a stoichiometric mixture of elements (Cu, Sb and S) taken in the atomic ratio of 12:4:13. The films were deposited at different beam currents viz. 40, 50 and 60 mA. The bulk material and thin films were studied using X-ray diffraction (XRD) and Raman spectroscopy to evaluate phase formation. The films grown at beam current values of 40 mA showed the presence of Cu12Sb4S13 phase along with Cu3SbS4 and CuS secondary phases. The films grown at 50 mA and 60 mA are showing Cu3SbS4 phase as main phase. These results are in agreement with the Raman studies. The composition of as grown films was analysed using Rutherford backscattered spectrometry (RBS) and proton induced X-ray emission (PIXE) measurements. The Cu content in the films is decreasing with increase in the beam current, whereas the Sb and S content shows increment. The optical absorption measurement was used to determine the optical band gap. The films show a direct band gap value of ∼1.8 eV with an optical absorption coefficient of ∼105 cm−1. Temperature dependant Seebeck coefficient and electrical resistivity values were measured for the thin films and the power factor values were calculated. The positive Seebeck coefficient values obtained indicate p-type semiconducting nature of the films. The maximum power factor of 2.30 μW/cm-K2 at 495 K was obtained for films grown at 40 mA e-beam current. The electrical and optical properties are significantly influenced by the presence of secondary phases and compositional deviation.</description><identifier>ISSN: 0038-092X</identifier><identifier>EISSN: 1471-1257</identifier><identifier>DOI: 10.1016/j.solener.2018.08.080</identifier><language>eng</language><publisher>New York: Elsevier Ltd</publisher><subject>Absorption ; Absorptivity ; Backscattering ; Ball milling ; Beam currents ; Copper ; Copper sulfides ; Diffraction ; EBPVD ; Electrical resistivity ; Electron beams ; Emission analysis ; Emission measurements ; Energy gap ; Evaporation ; Maximum power ; Optical absorption ; Optical properties ; P-type semiconductors ; Photovoltaic cells ; Photovoltaics ; Power factor ; Raman spectroscopy ; Seebeck effect ; Solar energy ; Spectrometry ; Spectrum analysis ; Tetrahedrite ; Thin films ; Transport properties ; X-ray diffraction</subject><ispartof>Solar energy, 2018-11, Vol.174, p.422-430</ispartof><rights>2018 Elsevier Ltd</rights><rights>Copyright Pergamon Press Inc. Nov 1, 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-dfa529910410569dc5dae86d37bfb5681645c6d55e20d8adde341ed2ad63a6583</citedby><cites>FETCH-LOGICAL-c403t-dfa529910410569dc5dae86d37bfb5681645c6d55e20d8adde341ed2ad63a6583</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038092X18308508$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Prem Kumar, D.S.</creatorcontrib><creatorcontrib>Ren, Minqin</creatorcontrib><creatorcontrib>Osipowicz, Thomas</creatorcontrib><creatorcontrib>Mallik, Ramesh Chandra</creatorcontrib><creatorcontrib>Malar, P.</creatorcontrib><title>Tetrahedrite (Cu12Sb4S13) thin films for photovoltaic and thermoelectric applications</title><title>Solar energy</title><description>•E-beam deposition of Cu12Sb4S13 thin films using mechanically alloyed single source material.•∼40–50 mA e-beam current is found optimal for Cu12Sb4S13 phase formation.•RBS and PIXE studies are used to determine composition of the films.•Optical band gap value of ∼1.8 eV with absorption coefficient of ∼105 cm−1 is observed for near stoichiometric films.•Thermoelectric measurements shows the maximum power factor of 2.30 μW/cm-K2 at 495 K for Cu12Sb4S13.
In this paper we have demonstrated the growth of Cu12Sb4S13 thin film through e-beam evaporation from a single source. The source material was pre-synthesised via ball mill method starting from a stoichiometric mixture of elements (Cu, Sb and S) taken in the atomic ratio of 12:4:13. The films were deposited at different beam currents viz. 40, 50 and 60 mA. The bulk material and thin films were studied using X-ray diffraction (XRD) and Raman spectroscopy to evaluate phase formation. The films grown at beam current values of 40 mA showed the presence of Cu12Sb4S13 phase along with Cu3SbS4 and CuS secondary phases. The films grown at 50 mA and 60 mA are showing Cu3SbS4 phase as main phase. These results are in agreement with the Raman studies. The composition of as grown films was analysed using Rutherford backscattered spectrometry (RBS) and proton induced X-ray emission (PIXE) measurements. The Cu content in the films is decreasing with increase in the beam current, whereas the Sb and S content shows increment. The optical absorption measurement was used to determine the optical band gap. The films show a direct band gap value of ∼1.8 eV with an optical absorption coefficient of ∼105 cm−1. Temperature dependant Seebeck coefficient and electrical resistivity values were measured for the thin films and the power factor values were calculated. The positive Seebeck coefficient values obtained indicate p-type semiconducting nature of the films. The maximum power factor of 2.30 μW/cm-K2 at 495 K was obtained for films grown at 40 mA e-beam current. The electrical and optical properties are significantly influenced by the presence of secondary phases and compositional deviation.</description><subject>Absorption</subject><subject>Absorptivity</subject><subject>Backscattering</subject><subject>Ball milling</subject><subject>Beam currents</subject><subject>Copper</subject><subject>Copper sulfides</subject><subject>Diffraction</subject><subject>EBPVD</subject><subject>Electrical resistivity</subject><subject>Electron beams</subject><subject>Emission analysis</subject><subject>Emission measurements</subject><subject>Energy gap</subject><subject>Evaporation</subject><subject>Maximum power</subject><subject>Optical absorption</subject><subject>Optical properties</subject><subject>P-type semiconductors</subject><subject>Photovoltaic cells</subject><subject>Photovoltaics</subject><subject>Power factor</subject><subject>Raman spectroscopy</subject><subject>Seebeck effect</subject><subject>Solar energy</subject><subject>Spectrometry</subject><subject>Spectrum analysis</subject><subject>Tetrahedrite</subject><subject>Thin films</subject><subject>Transport properties</subject><subject>X-ray diffraction</subject><issn>0038-092X</issn><issn>1471-1257</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNqFUE1Lw0AQXUTBWv0JQsCLHhJnkuwmPYkUv6DgoS14W7a7E7olzcbdreC_N6G9CwMD8z6G9xi7RcgQUDzusuBa6shnOWCdwThwxiZYVphizqtzNgEo6hRm-dcluwphB4AV1tWErVcUvdqS8TZScj8_YL7clEssHpK4tV3S2HYfksb5pN-66H5cG5XVierMgJPfO2pJRz-e-r61WkXrunDNLhrVBro57Slbv76s5u_p4vPtY_68SHUJRUxNo3g-myGUCFzMjOZGUS1MUW2aDRc1ipJrYTinHEytjKGiRDK5MqJQgtfFlN0dfXvvvg8Uoty5g--GlzJHzqEuBYqBxY8s7V0InhrZe7tX_lciyLFBuZOnBuXYoIRxYNA9HXU0RPixAxq0pU6TsX4ILY2z_zj8AROefLQ</recordid><startdate>20181101</startdate><enddate>20181101</enddate><creator>Prem Kumar, D.S.</creator><creator>Ren, Minqin</creator><creator>Osipowicz, Thomas</creator><creator>Mallik, Ramesh Chandra</creator><creator>Malar, P.</creator><general>Elsevier Ltd</general><general>Pergamon Press Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>KR7</scope><scope>L7M</scope><scope>SOI</scope></search><sort><creationdate>20181101</creationdate><title>Tetrahedrite (Cu12Sb4S13) thin films for photovoltaic and thermoelectric applications</title><author>Prem Kumar, D.S. ; Ren, Minqin ; Osipowicz, Thomas ; Mallik, Ramesh Chandra ; Malar, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-dfa529910410569dc5dae86d37bfb5681645c6d55e20d8adde341ed2ad63a6583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Absorption</topic><topic>Absorptivity</topic><topic>Backscattering</topic><topic>Ball milling</topic><topic>Beam currents</topic><topic>Copper</topic><topic>Copper sulfides</topic><topic>Diffraction</topic><topic>EBPVD</topic><topic>Electrical resistivity</topic><topic>Electron beams</topic><topic>Emission analysis</topic><topic>Emission measurements</topic><topic>Energy gap</topic><topic>Evaporation</topic><topic>Maximum power</topic><topic>Optical absorption</topic><topic>Optical properties</topic><topic>P-type semiconductors</topic><topic>Photovoltaic cells</topic><topic>Photovoltaics</topic><topic>Power factor</topic><topic>Raman spectroscopy</topic><topic>Seebeck effect</topic><topic>Solar energy</topic><topic>Spectrometry</topic><topic>Spectrum analysis</topic><topic>Tetrahedrite</topic><topic>Thin films</topic><topic>Transport properties</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Prem Kumar, D.S.</creatorcontrib><creatorcontrib>Ren, Minqin</creatorcontrib><creatorcontrib>Osipowicz, Thomas</creatorcontrib><creatorcontrib>Mallik, Ramesh Chandra</creatorcontrib><creatorcontrib>Malar, P.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Solar energy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Prem Kumar, D.S.</au><au>Ren, Minqin</au><au>Osipowicz, Thomas</au><au>Mallik, Ramesh Chandra</au><au>Malar, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tetrahedrite (Cu12Sb4S13) thin films for photovoltaic and thermoelectric applications</atitle><jtitle>Solar energy</jtitle><date>2018-11-01</date><risdate>2018</risdate><volume>174</volume><spage>422</spage><epage>430</epage><pages>422-430</pages><issn>0038-092X</issn><eissn>1471-1257</eissn><abstract>•E-beam deposition of Cu12Sb4S13 thin films using mechanically alloyed single source material.•∼40–50 mA e-beam current is found optimal for Cu12Sb4S13 phase formation.•RBS and PIXE studies are used to determine composition of the films.•Optical band gap value of ∼1.8 eV with absorption coefficient of ∼105 cm−1 is observed for near stoichiometric films.•Thermoelectric measurements shows the maximum power factor of 2.30 μW/cm-K2 at 495 K for Cu12Sb4S13.
In this paper we have demonstrated the growth of Cu12Sb4S13 thin film through e-beam evaporation from a single source. The source material was pre-synthesised via ball mill method starting from a stoichiometric mixture of elements (Cu, Sb and S) taken in the atomic ratio of 12:4:13. The films were deposited at different beam currents viz. 40, 50 and 60 mA. The bulk material and thin films were studied using X-ray diffraction (XRD) and Raman spectroscopy to evaluate phase formation. The films grown at beam current values of 40 mA showed the presence of Cu12Sb4S13 phase along with Cu3SbS4 and CuS secondary phases. The films grown at 50 mA and 60 mA are showing Cu3SbS4 phase as main phase. These results are in agreement with the Raman studies. The composition of as grown films was analysed using Rutherford backscattered spectrometry (RBS) and proton induced X-ray emission (PIXE) measurements. The Cu content in the films is decreasing with increase in the beam current, whereas the Sb and S content shows increment. The optical absorption measurement was used to determine the optical band gap. The films show a direct band gap value of ∼1.8 eV with an optical absorption coefficient of ∼105 cm−1. Temperature dependant Seebeck coefficient and electrical resistivity values were measured for the thin films and the power factor values were calculated. The positive Seebeck coefficient values obtained indicate p-type semiconducting nature of the films. The maximum power factor of 2.30 μW/cm-K2 at 495 K was obtained for films grown at 40 mA e-beam current. The electrical and optical properties are significantly influenced by the presence of secondary phases and compositional deviation.</abstract><cop>New York</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.solener.2018.08.080</doi><tpages>9</tpages></addata></record> |
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| subjects | Absorption Absorptivity Backscattering Ball milling Beam currents Copper Copper sulfides Diffraction EBPVD Electrical resistivity Electron beams Emission analysis Emission measurements Energy gap Evaporation Maximum power Optical absorption Optical properties P-type semiconductors Photovoltaic cells Photovoltaics Power factor Raman spectroscopy Seebeck effect Solar energy Spectrometry Spectrum analysis Tetrahedrite Thin films Transport properties X-ray diffraction |
| title | Tetrahedrite (Cu12Sb4S13) thin films for photovoltaic and thermoelectric applications |
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