Metal-insulator transition in V2O3 thin film caused by tip-induced strain

We have demonstrated pressure-induced transition in a c-axis oriented vanadium sesquioxide (V2O3) thin film from a strongly correlated metal to a Mott insulator in a submicrometric region by inducing a local stress using contact atomic force microscopy. To have an access to a pressure range of sub-g...

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Veröffentlicht in:	Applied physics letters 2018-12, Vol.113 (24)
Hauptverfasser:	Alyabyeva, N., Sakai, J., Bavencoffe, M., Wolfman, J., Limelette, P., Funakubo, H., Ruyter, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Atomic force microscopy Chemical vapor deposition Contact pressure Contact stresses Current voltage characteristics Electric contacts Electron density Finite element method Insulators Ion beams Laser deposition Metal-insulator transition Organic chemistry Phase transitions Platinum Pulsed lasers Thin films Vanadium oxides
Online-Zugang:	Volltext
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