The metal-insulator transition in ZrTe5 induced by temperature
The ZrTe5 is known as a high mobility thermoelectric material. In 2014, Weng et al. predicted theoretically that the monolayer ZrTe5 is also a 2D topological insulator. In early works, scientists were focused on the abnormal metal-insulator transition as the temperature decreases. However, the physi...
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| Veröffentlicht in: | AIP advances 2018-12, Vol.8 (12), p.125110-125110-7 |
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| creator | Wang, Wei Zhang, Xiaoqian Zhao, Yafei Xu, Huanfeng Lu, QiangSheng Liu, Chang Hu, Xiaoying Edmond Turcu, Ion Cristian He, Liang Zou, Wenqin Xu, Yongbing |
| description | The ZrTe5 is known as a high mobility thermoelectric material. In 2014, Weng et al. predicted theoretically that the monolayer ZrTe5 is also a 2D topological insulator. In early works, scientists were focused on the abnormal metal-insulator transition as the temperature decreases. However, the physics nature of this phenomenon is still under debate. Here we have explained this by temperature-induced swapping of the dominating carriers from holes to electrons, evidenced by magneto-transport and angle-resolved photoemission spectroscopy (ARPES) measurements on single crystal ZrTe5 samples. Both methods indicate that the Fermi level of ZrTe5 raises from the top of the valance band across the conduction band as the temperature decreases. This is also accompanied by changes of the lattice constants. Our first principle calculation suggests that the shift of the Fermi level comes from the band structure change caused by the temperature variation. |
| doi_str_mv | 10.1063/1.5064732 |
| format | Article |
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In 2014, Weng et al. predicted theoretically that the monolayer ZrTe5 is also a 2D topological insulator. In early works, scientists were focused on the abnormal metal-insulator transition as the temperature decreases. However, the physics nature of this phenomenon is still under debate. Here we have explained this by temperature-induced swapping of the dominating carriers from holes to electrons, evidenced by magneto-transport and angle-resolved photoemission spectroscopy (ARPES) measurements on single crystal ZrTe5 samples. Both methods indicate that the Fermi level of ZrTe5 raises from the top of the valance band across the conduction band as the temperature decreases. This is also accompanied by changes of the lattice constants. Our first principle calculation suggests that the shift of the Fermi level comes from the band structure change caused by the temperature variation.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.5064732</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Conduction bands ; Conduction cooling ; Electrons ; Fermi level ; First principles ; Lattice parameters ; Metal-insulator transition ; Photoelectric emission ; Single crystals ; Thermoelectric materials ; Topological insulators</subject><ispartof>AIP advances, 2018-12, Vol.8 (12), p.125110-125110-7</ispartof><rights>Author(s)</rights><rights>2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-1acd79a7f632e5140e3c770d367bf1ad8a693ff53af233a3e6907a95044b319e3</citedby><cites>FETCH-LOGICAL-c428t-1acd79a7f632e5140e3c770d367bf1ad8a693ff53af233a3e6907a95044b319e3</cites><orcidid>0000-0002-5279-0097</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,782,786,866,2106,27933,27934</link.rule.ids></links><search><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Zhang, Xiaoqian</creatorcontrib><creatorcontrib>Zhao, Yafei</creatorcontrib><creatorcontrib>Xu, Huanfeng</creatorcontrib><creatorcontrib>Lu, QiangSheng</creatorcontrib><creatorcontrib>Liu, Chang</creatorcontrib><creatorcontrib>Hu, Xiaoying</creatorcontrib><creatorcontrib>Edmond Turcu, Ion Cristian</creatorcontrib><creatorcontrib>He, Liang</creatorcontrib><creatorcontrib>Zou, Wenqin</creatorcontrib><creatorcontrib>Xu, Yongbing</creatorcontrib><title>The metal-insulator transition in ZrTe5 induced by temperature</title><title>AIP advances</title><description>The ZrTe5 is known as a high mobility thermoelectric material. In 2014, Weng et al. predicted theoretically that the monolayer ZrTe5 is also a 2D topological insulator. In early works, scientists were focused on the abnormal metal-insulator transition as the temperature decreases. However, the physics nature of this phenomenon is still under debate. Here we have explained this by temperature-induced swapping of the dominating carriers from holes to electrons, evidenced by magneto-transport and angle-resolved photoemission spectroscopy (ARPES) measurements on single crystal ZrTe5 samples. Both methods indicate that the Fermi level of ZrTe5 raises from the top of the valance band across the conduction band as the temperature decreases. This is also accompanied by changes of the lattice constants. Our first principle calculation suggests that the shift of the Fermi level comes from the band structure change caused by the temperature variation.</description><subject>Conduction bands</subject><subject>Conduction cooling</subject><subject>Electrons</subject><subject>Fermi level</subject><subject>First principles</subject><subject>Lattice parameters</subject><subject>Metal-insulator transition</subject><subject>Photoelectric emission</subject><subject>Single crystals</subject><subject>Thermoelectric materials</subject><subject>Topological insulators</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kE1LxDAQhosoKOrBf1DwpNA1yeSjvQiy-AULXtaLlzBtJ9plt1mTVPDf23VFBcG5zDA8PDO8WXbC2YQzDRd8opiWBsROdiC4KgsQQu_-mvez4xgXbCxZcVbKg-xy_kL5ihIui66PwxKTD3kK2Mcudb7Puz5_CnNS49AODbV5_Z4nWq0pYBoCHWV7DpeRjr_6YfZ4cz2f3hWzh9v76dWsaKQoU8GxaU2FxmkQpLhkBI0xrAVtasexLVFX4JwCdAIAgXTFDFaKSVkDrwgOs_utt_W4sOvQrTC8W4-d_Vz48GwxpK5ZkpWtAOWoZrpGqZuyRFcLNAIqbhQJNbpOt6518K8DxWQXfgj9-L4dg-KyAqFhpM62VBN8jIHc91XO7CZty-1X2iN7vmVj0yXc5PYNv_nwA9p16_6D_5o_AFTVi1g</recordid><startdate>201812</startdate><enddate>201812</enddate><creator>Wang, Wei</creator><creator>Zhang, Xiaoqian</creator><creator>Zhao, Yafei</creator><creator>Xu, Huanfeng</creator><creator>Lu, QiangSheng</creator><creator>Liu, Chang</creator><creator>Hu, Xiaoying</creator><creator>Edmond Turcu, Ion Cristian</creator><creator>He, Liang</creator><creator>Zou, Wenqin</creator><creator>Xu, Yongbing</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-5279-0097</orcidid></search><sort><creationdate>201812</creationdate><title>The metal-insulator transition in ZrTe5 induced by temperature</title><author>Wang, Wei ; Zhang, Xiaoqian ; Zhao, Yafei ; Xu, Huanfeng ; Lu, QiangSheng ; Liu, Chang ; Hu, Xiaoying ; Edmond Turcu, Ion Cristian ; He, Liang ; Zou, Wenqin ; Xu, Yongbing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-1acd79a7f632e5140e3c770d367bf1ad8a693ff53af233a3e6907a95044b319e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Conduction bands</topic><topic>Conduction cooling</topic><topic>Electrons</topic><topic>Fermi level</topic><topic>First principles</topic><topic>Lattice parameters</topic><topic>Metal-insulator transition</topic><topic>Photoelectric emission</topic><topic>Single crystals</topic><topic>Thermoelectric materials</topic><topic>Topological insulators</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Zhang, Xiaoqian</creatorcontrib><creatorcontrib>Zhao, Yafei</creatorcontrib><creatorcontrib>Xu, Huanfeng</creatorcontrib><creatorcontrib>Lu, QiangSheng</creatorcontrib><creatorcontrib>Liu, Chang</creatorcontrib><creatorcontrib>Hu, Xiaoying</creatorcontrib><creatorcontrib>Edmond Turcu, Ion Cristian</creatorcontrib><creatorcontrib>He, Liang</creatorcontrib><creatorcontrib>Zou, Wenqin</creatorcontrib><creatorcontrib>Xu, Yongbing</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Wei</au><au>Zhang, Xiaoqian</au><au>Zhao, Yafei</au><au>Xu, Huanfeng</au><au>Lu, QiangSheng</au><au>Liu, Chang</au><au>Hu, Xiaoying</au><au>Edmond Turcu, Ion Cristian</au><au>He, Liang</au><au>Zou, Wenqin</au><au>Xu, Yongbing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The metal-insulator transition in ZrTe5 induced by temperature</atitle><jtitle>AIP advances</jtitle><date>2018-12</date><risdate>2018</risdate><volume>8</volume><issue>12</issue><spage>125110</spage><epage>125110-7</epage><pages>125110-125110-7</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>The ZrTe5 is known as a high mobility thermoelectric material. In 2014, Weng et al. predicted theoretically that the monolayer ZrTe5 is also a 2D topological insulator. In early works, scientists were focused on the abnormal metal-insulator transition as the temperature decreases. However, the physics nature of this phenomenon is still under debate. Here we have explained this by temperature-induced swapping of the dominating carriers from holes to electrons, evidenced by magneto-transport and angle-resolved photoemission spectroscopy (ARPES) measurements on single crystal ZrTe5 samples. Both methods indicate that the Fermi level of ZrTe5 raises from the top of the valance band across the conduction band as the temperature decreases. This is also accompanied by changes of the lattice constants. Our first principle calculation suggests that the shift of the Fermi level comes from the band structure change caused by the temperature variation.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5064732</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-5279-0097</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Conduction bands Conduction cooling Electrons Fermi level First principles Lattice parameters Metal-insulator transition Photoelectric emission Single crystals Thermoelectric materials Topological insulators |
| title | The metal-insulator transition in ZrTe5 induced by temperature |
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