Effects of Copper Migration on the Reliability of Through-Silicon Via (TSV)

Non-destructive electrical characterization was performed to detect copper migration in a degraded through-silicon via structure after various stressing conditions, such as elevated temperature exposure, temperature cycling, and electrical biasing. They were performed either independently or as a co...

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Veröffentlicht in:	IEEE transactions on device and materials reliability 2018-12, Vol.18 (4), p.520-528
Hauptverfasser:	Chan, Jiawei Marvin, Lee, Kheng Chooi, Tan, Chuan Seng
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	Capacitance-voltage characteristics Copper Copper oxides Deceleration Degradation Dielectric breakdown Dielectrics Electric fields electrical characterization Electrical measurement Electrical properties Failure analysis Failure times High temperature Integrated circuits Interconnections Ions Migration Oxidation Photoelectrons Reliability Reliability analysis reliability testing Silicon Stress Temperature measurement Through-silicon vias Time dependence Valence X ray spectra
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