Fano Resonance Excited All-Optical XOR, XNOR, and NOT Gates with High Contrast Ratio
We have presented all-optical XOR, XNOR, and NOT gates using metal-insulator-metal (MIM)-coupled ring resonator. The performance of the device is evaluated by finite difference in time-domain (FDTD) method. The proposed gate utilizes a unique phenomenon of Fano resonance to excite logic OFF/ON state...
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| Veröffentlicht in: | Plasmonics (Norwell, Mass.) Mass.), 2018-12, Vol.13 (6), p.1987-1994 |
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| container_end_page | 1994 |
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| container_issue | 6 |
| container_start_page | 1987 |
| container_title | Plasmonics (Norwell, Mass.) |
| container_volume | 13 |
| creator | Zafar, Rukhsar Nawaz, Sarfaraz Salim, Mohammad |
| description | We have presented all-optical XOR, XNOR, and NOT gates using metal-insulator-metal (MIM)-coupled ring resonator. The performance of the device is evaluated by finite difference in time-domain (FDTD) method. The proposed gate utilizes a unique phenomenon of Fano resonance to excite logic OFF/ON state. Fano resonance has quite asymmetric resonance profile and the transmission spectrum of Fano profile abruptly drops to a minimum value at the resonance condition. Due to this unique resonance phenomenon, a large value of contrast ratio is obtained. The proposed XNOR gate offers a contrast ratio (C.R.) of 20.66 dB while XOR and NOT gates offer C.R. 12.8 and 18.8 dB respectively. The variation of contrast ratio is also studied against different input wavelength and it is reported that the obtained value of contrast ratio is an optimum value for the proposed structure. The device is compact sized with small dimension 0.31
λ
0
2
, where
λ
0
= 1.55 μm. The proposed device opens up the avenues for designing on-chip optical gates in the field of high-speed optical communication networks. |
| doi_str_mv | 10.1007/s11468-018-0714-6 |
| format | Article |
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λ
0
2
, where
λ
0
= 1.55 μm. The proposed device opens up the avenues for designing on-chip optical gates in the field of high-speed optical communication networks.</description><identifier>ISSN: 1557-1955</identifier><identifier>EISSN: 1557-1963</identifier><identifier>DOI: 10.1007/s11468-018-0714-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Biochemistry ; Biological and Medical Physics ; Biophysics ; Biotechnology ; Chemistry ; Chemistry and Materials Science ; Communication networks ; Fano resonance ; Finite difference method ; Gates ; Insulators ; LCDs ; Liquid crystal displays ; Nanotechnology ; Optical communication ; Time domain analysis</subject><ispartof>Plasmonics (Norwell, Mass.), 2018-12, Vol.13 (6), p.1987-1994</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-dfb72b6f7ea7adf1ab23a398747ba0f98dfb34b240b41ef9721f2569ce9346663</citedby><cites>FETCH-LOGICAL-c316t-dfb72b6f7ea7adf1ab23a398747ba0f98dfb34b240b41ef9721f2569ce9346663</cites><orcidid>0000-0003-2678-8388</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11468-018-0714-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11468-018-0714-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Zafar, Rukhsar</creatorcontrib><creatorcontrib>Nawaz, Sarfaraz</creatorcontrib><creatorcontrib>Salim, Mohammad</creatorcontrib><title>Fano Resonance Excited All-Optical XOR, XNOR, and NOT Gates with High Contrast Ratio</title><title>Plasmonics (Norwell, Mass.)</title><addtitle>Plasmonics</addtitle><description>We have presented all-optical XOR, XNOR, and NOT gates using metal-insulator-metal (MIM)-coupled ring resonator. The performance of the device is evaluated by finite difference in time-domain (FDTD) method. The proposed gate utilizes a unique phenomenon of Fano resonance to excite logic OFF/ON state. Fano resonance has quite asymmetric resonance profile and the transmission spectrum of Fano profile abruptly drops to a minimum value at the resonance condition. Due to this unique resonance phenomenon, a large value of contrast ratio is obtained. The proposed XNOR gate offers a contrast ratio (C.R.) of 20.66 dB while XOR and NOT gates offer C.R. 12.8 and 18.8 dB respectively. The variation of contrast ratio is also studied against different input wavelength and it is reported that the obtained value of contrast ratio is an optimum value for the proposed structure. The device is compact sized with small dimension 0.31
λ
0
2
, where
λ
0
= 1.55 μm. The proposed device opens up the avenues for designing on-chip optical gates in the field of high-speed optical communication networks.</description><subject>Biochemistry</subject><subject>Biological and Medical Physics</subject><subject>Biophysics</subject><subject>Biotechnology</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Communication networks</subject><subject>Fano resonance</subject><subject>Finite difference method</subject><subject>Gates</subject><subject>Insulators</subject><subject>LCDs</subject><subject>Liquid crystal displays</subject><subject>Nanotechnology</subject><subject>Optical communication</subject><subject>Time domain analysis</subject><issn>1557-1955</issn><issn>1557-1963</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKw0AUhgdRsFYfwN2AW6Nzkrl0lqX0IpQGQoXuhkky06bEpM5MUd_ehIiuXJzL4jv_gQ-heyBPQIh49gCUTyICXQmgEb9AI2BMRCB5cvm7M3aNbrw_EkIp5XSEtgvdtDgzvm10Uxg8_yyqYEo8resoPYWq0DXepdkj3m36rpsSb9ItXupgPP6owgGvqv0Bz9omOO0DznSo2lt0ZXXtzd3PHKPXxXw7W0XrdPkym66jIgEeotLmIs65FUYLXVrQeZzoRE4EFbkmVk46IKF5TElOwVgpYrAx47IwMqGc82SMHobck2vfz8YHdWzPruleqhgYYZJSJjsKBqpwrffOWHVy1Zt2XwqI6uWpQZ7q5KlenuqT4-HGd2yzN-4v-f-jb2KBb5Q</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Zafar, Rukhsar</creator><creator>Nawaz, Sarfaraz</creator><creator>Salim, Mohammad</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-2678-8388</orcidid></search><sort><creationdate>20181201</creationdate><title>Fano Resonance Excited All-Optical XOR, XNOR, and NOT Gates with High Contrast Ratio</title><author>Zafar, Rukhsar ; Nawaz, Sarfaraz ; Salim, Mohammad</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-dfb72b6f7ea7adf1ab23a398747ba0f98dfb34b240b41ef9721f2569ce9346663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Biochemistry</topic><topic>Biological and Medical Physics</topic><topic>Biophysics</topic><topic>Biotechnology</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Communication networks</topic><topic>Fano resonance</topic><topic>Finite difference method</topic><topic>Gates</topic><topic>Insulators</topic><topic>LCDs</topic><topic>Liquid crystal displays</topic><topic>Nanotechnology</topic><topic>Optical communication</topic><topic>Time domain analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zafar, Rukhsar</creatorcontrib><creatorcontrib>Nawaz, Sarfaraz</creatorcontrib><creatorcontrib>Salim, Mohammad</creatorcontrib><collection>CrossRef</collection><jtitle>Plasmonics (Norwell, Mass.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zafar, Rukhsar</au><au>Nawaz, Sarfaraz</au><au>Salim, Mohammad</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fano Resonance Excited All-Optical XOR, XNOR, and NOT Gates with High Contrast Ratio</atitle><jtitle>Plasmonics (Norwell, Mass.)</jtitle><stitle>Plasmonics</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>13</volume><issue>6</issue><spage>1987</spage><epage>1994</epage><pages>1987-1994</pages><issn>1557-1955</issn><eissn>1557-1963</eissn><abstract>We have presented all-optical XOR, XNOR, and NOT gates using metal-insulator-metal (MIM)-coupled ring resonator. The performance of the device is evaluated by finite difference in time-domain (FDTD) method. The proposed gate utilizes a unique phenomenon of Fano resonance to excite logic OFF/ON state. Fano resonance has quite asymmetric resonance profile and the transmission spectrum of Fano profile abruptly drops to a minimum value at the resonance condition. Due to this unique resonance phenomenon, a large value of contrast ratio is obtained. The proposed XNOR gate offers a contrast ratio (C.R.) of 20.66 dB while XOR and NOT gates offer C.R. 12.8 and 18.8 dB respectively. The variation of contrast ratio is also studied against different input wavelength and it is reported that the obtained value of contrast ratio is an optimum value for the proposed structure. The device is compact sized with small dimension 0.31
λ
0
2
, where
λ
0
= 1.55 μm. The proposed device opens up the avenues for designing on-chip optical gates in the field of high-speed optical communication networks.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11468-018-0714-6</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-2678-8388</orcidid></addata></record> |
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| issn | 1557-1955 1557-1963 |
| language | eng |
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| source | SpringerLink Journals |
| subjects | Biochemistry Biological and Medical Physics Biophysics Biotechnology Chemistry Chemistry and Materials Science Communication networks Fano resonance Finite difference method Gates Insulators LCDs Liquid crystal displays Nanotechnology Optical communication Time domain analysis |
| title | Fano Resonance Excited All-Optical XOR, XNOR, and NOT Gates with High Contrast Ratio |
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