Annealing Impact on Interface Properties of Sprayed Al2O3-Based MIS Structure for Silicon Surface Passivation

Aluminum oxide (Al 2 O 3 ) films of different thicknesses were deposited on quartz and silicon (100) substrates by an ultrasonic spray method from a solution of aluminum acetylacetonate dissolved in N,N -dimethylformamide with different molar concentrations. The optical, morphological and electrical...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of electronic materials 2019-02, Vol.48 (2), p.916-924
Hauptverfasser:	Zougar, L., Sali, S., Kermadi, S., Boucheham, A., Boumaour, M., Kechouane, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum oxide Annealing Characterization and Evaluation of Materials Charge density Chemistry and Materials Science Electric potential Electrical properties Electronics and Microelectronics Film thickness Heat treatment Instrumentation Interfacial properties Materials Science Metallizing Optical and Electronic Materials Optical properties Passivity Photovoltaic cells Polarity Refractivity Silicon substrates Solar cells Solid State Physics Surface roughness Ultrasonic testing
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!