Annealing Impact on Interface Properties of Sprayed Al2O3-Based MIS Structure for Silicon Surface Passivation

Aluminum oxide (Al 2 O 3 ) films of different thicknesses were deposited on quartz and silicon (100) substrates by an ultrasonic spray method from a solution of aluminum acetylacetonate dissolved in N,N -dimethylformamide with different molar concentrations. The optical, morphological and electrical properties were investigated. Increasing the molar concentration leads to a refractive index decrease, an increase in the optical band gap from 5.26 eV to 5.52 eV and a change in the surface roughness of the films. The electrical parameters at the Al 2 O 3 /Si interface such as the flat band voltage ( V FB ), effective charge density ( Q eff ) and interface trap density ( D it ) were explored as a function of the molar concentration, film thickness and heat treatment. The latter, done by two annealing processes, namely, the post deposition annealing (PDA) and post metallization annealing (PMA) on the structure, lead to remarkable interface properties. It was found that the positive flat band voltage V FB shift is correlated with the generation of negative effective charge during PMA. A decrease of the D it distribution in the PMA samples with no significant effect in the case of PDA samples was clearly observed for different molar concentrations. Furthermore, as the Al 2 O 3 film thickness decreases, D it decreases in both PDA and PMA samples while the relatively high density Q eff and its negative charge polarity were obtained for thinner films. A noticeable passivation effect on the Al 2 O 3 /Si interface has been confirmed on samples that underwent the annealing process. These findings related specifically to the interface properties are promising for silicon surface passivation, in particular for solar cells applications.