Photoelectric Properties of Zinc Oxide Films Diffusion-Doped by Gallium and Lithium for Creation of Nonlinear Electric Elements
A technique for local diffusion doping of the certain areas of the ZnO film of donor (Ga) and acceptor (Li) impurities has been developed to produce the films with the topological pattern of doping regions. The diffusion process, electrophysical and photoelectric properties of diffusion-doped sample...
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| Veröffentlicht in: | Journal of contemporary physics 2018-10, Vol.53 (4), p.358-366 |
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| container_title | Journal of contemporary physics |
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| creator | Hovsepyan, R. K. Aghamalyan, N. R. Kafadaryan, E. A. Mnatsakanyan, G. G. Arakelyan, A. A. Petrosyan, S. I. Badalyan, G. R. |
| description | A technique for local diffusion doping of the certain areas of the ZnO film of donor (Ga) and acceptor (Li) impurities has been developed to produce the films with the topological pattern of doping regions. The diffusion process, electrophysical and photoelectric properties of diffusion-doped samples of the planar MSM structures based on the Al–ZnO–Al, Al–ZnO:Ga–Al and Al–ZnO:Li–Al with the metallic aluminum as contacts are investigated. It is shown that the diffusion introduction of the impurity of gallium suppresses the photosensitivity, and the diffusion introduction of lithium into the ZnO films increases the photosensitivity as compared to the undoped areas of the same film. |
| doi_str_mv | 10.3103/S1068337218040114 |
| format | Article |
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K. ; Aghamalyan, N. R. ; Kafadaryan, E. A. ; Mnatsakanyan, G. G. ; Arakelyan, A. A. ; Petrosyan, S. I. ; Badalyan, G. R.</creator><creatorcontrib>Hovsepyan, R. K. ; Aghamalyan, N. R. ; Kafadaryan, E. A. ; Mnatsakanyan, G. G. ; Arakelyan, A. A. ; Petrosyan, S. I. ; Badalyan, G. R.</creatorcontrib><description>A technique for local diffusion doping of the certain areas of the ZnO film of donor (Ga) and acceptor (Li) impurities has been developed to produce the films with the topological pattern of doping regions. The diffusion process, electrophysical and photoelectric properties of diffusion-doped samples of the planar MSM structures based on the Al–ZnO–Al, Al–ZnO:Ga–Al and Al–ZnO:Li–Al with the metallic aluminum as contacts are investigated. It is shown that the diffusion introduction of the impurity of gallium suppresses the photosensitivity, and the diffusion introduction of lithium into the ZnO films increases the photosensitivity as compared to the undoped areas of the same film.</description><identifier>ISSN: 1068-3372</identifier><identifier>EISSN: 1934-9378</identifier><identifier>DOI: 10.3103/S1068337218040114</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminum ; Diffusion ; Doping ; Electric contacts ; Gallium ; Impurities ; Lithium ; Oxide coatings ; Particle and Nuclear Physics ; Photoelectric effect ; Photoelectricity ; Photosensitivity ; Physics ; Physics and Astronomy ; Zinc oxide ; Zinc oxides</subject><ispartof>Journal of contemporary physics, 2018-10, Vol.53 (4), p.358-366</ispartof><rights>Allerton Press, Inc. 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-fc3dedc12f7a3710bcc894dbc1d8b244ba990e71f207b6d5634c9daa950ba90b3</citedby><cites>FETCH-LOGICAL-c316t-fc3dedc12f7a3710bcc894dbc1d8b244ba990e71f207b6d5634c9daa950ba90b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3103/S1068337218040114$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3103/S1068337218040114$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Hovsepyan, R. 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It is shown that the diffusion introduction of the impurity of gallium suppresses the photosensitivity, and the diffusion introduction of lithium into the ZnO films increases the photosensitivity as compared to the undoped areas of the same film.</description><subject>Aluminum</subject><subject>Diffusion</subject><subject>Doping</subject><subject>Electric contacts</subject><subject>Gallium</subject><subject>Impurities</subject><subject>Lithium</subject><subject>Oxide coatings</subject><subject>Particle and Nuclear Physics</subject><subject>Photoelectric effect</subject><subject>Photoelectricity</subject><subject>Photosensitivity</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>1068-3372</issn><issn>1934-9378</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEUhYMoWKs_wF3A9ejNZJ5LaWsVii2oGzdDJg-bMpPUJAW78q-boYoLcXUPnO-cCwehSwLXlAC9eSJQVJSWKakgA0KyIzQiNc2SmpbVcdTRTgb_FJ15vwHI8-iO0OdqbYOVneTBaY5Xzm6lC1p6bBV-1Ybj5YcWEt_prvd4qpXaeW1NMo2cwO0ez1nX6V2PmRF4ocN60Mo6PHGShUgOPY_WdNpI5vDs51EUvTTBn6MTxTovL77vGL3czZ4n98liOX-Y3C4STkkREsWpkIKTVJWMlgRazqs6Ey0nomrTLGtZXYMsiUqhbAuRFzTjtWCsziFa0NIxujr0bp1930kfmo3dORNfNimhZQ4VpBApcqC4s947qZqt0z1z-4ZAM-zc_Nk5ZtJDxkfWvEn32_x_6AvmYIC2</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>Hovsepyan, R. 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Phys</stitle><date>2018-10-01</date><risdate>2018</risdate><volume>53</volume><issue>4</issue><spage>358</spage><epage>366</epage><pages>358-366</pages><issn>1068-3372</issn><eissn>1934-9378</eissn><abstract>A technique for local diffusion doping of the certain areas of the ZnO film of donor (Ga) and acceptor (Li) impurities has been developed to produce the films with the topological pattern of doping regions. The diffusion process, electrophysical and photoelectric properties of diffusion-doped samples of the planar MSM structures based on the Al–ZnO–Al, Al–ZnO:Ga–Al and Al–ZnO:Li–Al with the metallic aluminum as contacts are investigated. It is shown that the diffusion introduction of the impurity of gallium suppresses the photosensitivity, and the diffusion introduction of lithium into the ZnO films increases the photosensitivity as compared to the undoped areas of the same film.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.3103/S1068337218040114</doi><tpages>9</tpages></addata></record> |
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| language | eng |
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| source | SpringerNature Journals |
| subjects | Aluminum Diffusion Doping Electric contacts Gallium Impurities Lithium Oxide coatings Particle and Nuclear Physics Photoelectric effect Photoelectricity Photosensitivity Physics Physics and Astronomy Zinc oxide Zinc oxides |
| title | Photoelectric Properties of Zinc Oxide Films Diffusion-Doped by Gallium and Lithium for Creation of Nonlinear Electric Elements |
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