Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films
Herein, ferroelastic domain switching from the nonpolar b-axis to the polar c-axis oriented domain in 7%-YO1.5-substituted HfO2 (YHO-7) epitaxial ferroelectric films is demonstrated. Scanning transmission electron microscopy (STEM) indicates that the polarization of a pristine film deposited on a Sn...
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Veröffentlicht in: | Applied physics letters 2018-11, Vol.113 (21) |
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creator | Shimizu, Takao Mimura, Takanori Kiguchi, Takanori Shiraishi, Takahisa Konno, Toyohiko Katsuya, Yoshio Sakata, Osami Funakubo, Hiroshi |
description | Herein, ferroelastic domain switching from the nonpolar b-axis to the polar c-axis oriented domain in 7%-YO1.5-substituted HfO2 (YHO-7) epitaxial ferroelectric films is demonstrated. Scanning transmission electron microscopy (STEM) indicates that the polarization of a pristine film deposited on a Sn-doped In2O3/(001)YSZ substrate by the pulsed laser deposition method tends to be along the in-plane direction to avoid a strong depolarization field with respect to the out-of-plane direction. Applying an electric field aids in ferroelastic domain switching in YHO-7 films. Such films exhibit ferroelectric characteristics with a relatively large saturated polarization around 30 μC/cm2 by polarization reorientation from the in-plane to the out-of-plane directions and an increased dielectric constant. The synchrotron X-ray diffraction measurements with a focused beam for the pristine and poled area indicate ferroelastic 90° domain switching as the odd number reflection disappears, which is only allowed in the nonpolar b-axis orientation. STEM observations also show a significant increase in the c-axis oriented domain. This observation of ferroelastic domain switching strongly supports the conclusion that the ferroelectricity of HfO2 originates from the non-centrosymmetric orthorhombic phase. |
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Scanning transmission electron microscopy (STEM) indicates that the polarization of a pristine film deposited on a Sn-doped In2O3/(001)YSZ substrate by the pulsed laser deposition method tends to be along the in-plane direction to avoid a strong depolarization field with respect to the out-of-plane direction. Applying an electric field aids in ferroelastic domain switching in YHO-7 films. Such films exhibit ferroelectric characteristics with a relatively large saturated polarization around 30 μC/cm2 by polarization reorientation from the in-plane to the out-of-plane directions and an increased dielectric constant. The synchrotron X-ray diffraction measurements with a focused beam for the pristine and poled area indicate ferroelastic 90° domain switching as the odd number reflection disappears, which is only allowed in the nonpolar b-axis orientation. STEM observations also show a significant increase in the c-axis oriented domain. This observation of ferroelastic domain switching strongly supports the conclusion that the ferroelectricity of HfO2 originates from the non-centrosymmetric orthorhombic phase.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5055258</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Depolarization ; Electric fields ; Ferroelectric materials ; Ferroelectricity ; Hafnium oxide ; Indium oxides ; Ion beams ; Orthorhombic phase ; Polarization ; Pulsed laser deposition ; Pulsed lasers ; Scanning electron microscopy ; Scanning transmission electron microscopy ; Substrates ; Switching ; Synchrotron radiation ; Thin films ; Tin ; Transmission electron microscopy ; X-ray diffraction ; Yttria-stabilized zirconia</subject><ispartof>Applied physics letters, 2018-11, Vol.113 (21)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c437t-dcca902358e11c6f01bd3080c6ddde4aa48f05b740fe63e4f9572b03d4b79f5d3</citedby><cites>FETCH-LOGICAL-c437t-dcca902358e11c6f01bd3080c6ddde4aa48f05b740fe63e4f9572b03d4b79f5d3</cites><orcidid>0000-0001-9508-7601 ; 0000-0001-5710-7448 ; 0000-0003-2626-0161</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.5055258$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Shimizu, Takao</creatorcontrib><creatorcontrib>Mimura, Takanori</creatorcontrib><creatorcontrib>Kiguchi, Takanori</creatorcontrib><creatorcontrib>Shiraishi, Takahisa</creatorcontrib><creatorcontrib>Konno, Toyohiko</creatorcontrib><creatorcontrib>Katsuya, Yoshio</creatorcontrib><creatorcontrib>Sakata, Osami</creatorcontrib><creatorcontrib>Funakubo, Hiroshi</creatorcontrib><title>Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films</title><title>Applied physics letters</title><description>Herein, ferroelastic domain switching from the nonpolar b-axis to the polar c-axis oriented domain in 7%-YO1.5-substituted HfO2 (YHO-7) epitaxial ferroelectric films is demonstrated. Scanning transmission electron microscopy (STEM) indicates that the polarization of a pristine film deposited on a Sn-doped In2O3/(001)YSZ substrate by the pulsed laser deposition method tends to be along the in-plane direction to avoid a strong depolarization field with respect to the out-of-plane direction. Applying an electric field aids in ferroelastic domain switching in YHO-7 films. Such films exhibit ferroelectric characteristics with a relatively large saturated polarization around 30 μC/cm2 by polarization reorientation from the in-plane to the out-of-plane directions and an increased dielectric constant. The synchrotron X-ray diffraction measurements with a focused beam for the pristine and poled area indicate ferroelastic 90° domain switching as the odd number reflection disappears, which is only allowed in the nonpolar b-axis orientation. STEM observations also show a significant increase in the c-axis oriented domain. This observation of ferroelastic domain switching strongly supports the conclusion that the ferroelectricity of HfO2 originates from the non-centrosymmetric orthorhombic phase.</description><subject>Applied physics</subject><subject>Depolarization</subject><subject>Electric fields</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Hafnium oxide</subject><subject>Indium oxides</subject><subject>Ion beams</subject><subject>Orthorhombic phase</subject><subject>Polarization</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Scanning electron microscopy</subject><subject>Scanning transmission electron microscopy</subject><subject>Substrates</subject><subject>Switching</subject><subject>Synchrotron radiation</subject><subject>Thin films</subject><subject>Tin</subject><subject>Transmission electron microscopy</subject><subject>X-ray diffraction</subject><subject>Yttria-stabilized zirconia</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp90E1LAzEQBuAgCtbqwX8Q8KSwdbLZbHaPUqwVhF70KCGbD03Zj5qkav-9kS16EDwNwzy8Ay9C5wRmBEp6TWYMGMtZdYAmBDjPKCHVIZoAAM3KmpFjdBLCOq0sp3SCnhfG-8G0RkXvlIs73BntZDQaNztsx6MM0Smsh066HocPF9Wr619wWpZ2lWeNDImbjYvy08kWx3TF1rVdOEVHVrbBnO3nFD0tbh_ny-xhdXc_v3nIVEF5zLRSsoacssoQokoLpNEUKlCl1toUUhaVBdbwAqwpqSlszXjeANVFw2vLNJ2iizF344e3rQlRrIet79NLkRPKeAWcQFKXo1J-CMEbKzbeddLvBAHx3Z4gYt9eslejDakUGd3Q_-D3wf9CsdH2P_w3-QuxWX51</recordid><startdate>20181119</startdate><enddate>20181119</enddate><creator>Shimizu, Takao</creator><creator>Mimura, Takanori</creator><creator>Kiguchi, Takanori</creator><creator>Shiraishi, Takahisa</creator><creator>Konno, Toyohiko</creator><creator>Katsuya, Yoshio</creator><creator>Sakata, Osami</creator><creator>Funakubo, Hiroshi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9508-7601</orcidid><orcidid>https://orcid.org/0000-0001-5710-7448</orcidid><orcidid>https://orcid.org/0000-0003-2626-0161</orcidid></search><sort><creationdate>20181119</creationdate><title>Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films</title><author>Shimizu, Takao ; 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Scanning transmission electron microscopy (STEM) indicates that the polarization of a pristine film deposited on a Sn-doped In2O3/(001)YSZ substrate by the pulsed laser deposition method tends to be along the in-plane direction to avoid a strong depolarization field with respect to the out-of-plane direction. Applying an electric field aids in ferroelastic domain switching in YHO-7 films. Such films exhibit ferroelectric characteristics with a relatively large saturated polarization around 30 μC/cm2 by polarization reorientation from the in-plane to the out-of-plane directions and an increased dielectric constant. The synchrotron X-ray diffraction measurements with a focused beam for the pristine and poled area indicate ferroelastic 90° domain switching as the odd number reflection disappears, which is only allowed in the nonpolar b-axis orientation. STEM observations also show a significant increase in the c-axis oriented domain. This observation of ferroelastic domain switching strongly supports the conclusion that the ferroelectricity of HfO2 originates from the non-centrosymmetric orthorhombic phase.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5055258</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-9508-7601</orcidid><orcidid>https://orcid.org/0000-0001-5710-7448</orcidid><orcidid>https://orcid.org/0000-0003-2626-0161</orcidid></addata></record> |
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subjects | Applied physics Depolarization Electric fields Ferroelectric materials Ferroelectricity Hafnium oxide Indium oxides Ion beams Orthorhombic phase Polarization Pulsed laser deposition Pulsed lasers Scanning electron microscopy Scanning transmission electron microscopy Substrates Switching Synchrotron radiation Thin films Tin Transmission electron microscopy X-ray diffraction Yttria-stabilized zirconia |
title | Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films |
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