Semiconducting single-walled carbon nanotube network-based double-gate thin-film transistors for high-performance aqueous chemical sensor applications
In this study, we fabricated a highly sensitive separative extended gate chemically modified field effect transistor (SEG-ChemFET) sensor using a semiconducting single-walled carbon nanotube (scSWCNT) network. To improve the stability and sensitivity of the scSWNT channel layer, we fabricated a doub...
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| Veröffentlicht in: | AIP advances 2018-11, Vol.8 (11), p.115312-115312-5 |
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| creator | Hong, Eun-Ki Cho, Won-Ju |
| description | In this study, we fabricated a highly sensitive separative extended gate chemically modified field effect transistor (SEG-ChemFET) sensor using a semiconducting single-walled carbon nanotube (scSWCNT) network. To improve the stability and sensitivity of the scSWNT channel layer, we fabricated a double-gate structure FET transducer with a passivated channel using top- and bottom-gate insulators and applied a separate sensing membrane. The scSWCNT network channel was formed by solution process. In order to increase the sensitivity, a low-k spin-on-glass (SOG) film and a stacked Ta2O5/SiO2 film were formed as top-gate and engineered bottom-gate insulators, respectively, which improved the coupling ratio. As a result, the fabricated scSWCNT ChemFET sensor exhibited sensitivity of 365.65 mV/pH sensitivity, which is much higher than the Nernst limit (59.5 mV/pH), a linearity of 99.88%, and a drift rate of 72.44 mV/h. Thus, we expect this research to have important applications for high-sensitivity biosensors. |
| doi_str_mv | 10.1063/1.5059376 |
| format | Article |
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To improve the stability and sensitivity of the scSWNT channel layer, we fabricated a double-gate structure FET transducer with a passivated channel using top- and bottom-gate insulators and applied a separate sensing membrane. The scSWCNT network channel was formed by solution process. In order to increase the sensitivity, a low-k spin-on-glass (SOG) film and a stacked Ta2O5/SiO2 film were formed as top-gate and engineered bottom-gate insulators, respectively, which improved the coupling ratio. As a result, the fabricated scSWCNT ChemFET sensor exhibited sensitivity of 365.65 mV/pH sensitivity, which is much higher than the Nernst limit (59.5 mV/pH), a linearity of 99.88%, and a drift rate of 72.44 mV/h. Thus, we expect this research to have important applications for high-sensitivity biosensors.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/1.5059376</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Biosensors ; Chemical sensors ; Drift rate ; Field effect transistors ; Insulators ; Linearity ; Organic chemistry ; Semiconductor devices ; Sensitivity ; Sensors ; Silicon dioxide ; Single wall carbon nanotubes ; Tantalum ; Tantalum oxides ; Thin film transistors</subject><ispartof>AIP advances, 2018-11, Vol.8 (11), p.115312-115312-5</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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To improve the stability and sensitivity of the scSWNT channel layer, we fabricated a double-gate structure FET transducer with a passivated channel using top- and bottom-gate insulators and applied a separate sensing membrane. The scSWCNT network channel was formed by solution process. In order to increase the sensitivity, a low-k spin-on-glass (SOG) film and a stacked Ta2O5/SiO2 film were formed as top-gate and engineered bottom-gate insulators, respectively, which improved the coupling ratio. As a result, the fabricated scSWCNT ChemFET sensor exhibited sensitivity of 365.65 mV/pH sensitivity, which is much higher than the Nernst limit (59.5 mV/pH), a linearity of 99.88%, and a drift rate of 72.44 mV/h. Thus, we expect this research to have important applications for high-sensitivity biosensors.</description><subject>Biosensors</subject><subject>Chemical sensors</subject><subject>Drift rate</subject><subject>Field effect transistors</subject><subject>Insulators</subject><subject>Linearity</subject><subject>Organic chemistry</subject><subject>Semiconductor devices</subject><subject>Sensitivity</subject><subject>Sensors</subject><subject>Silicon dioxide</subject><subject>Single wall carbon nanotubes</subject><subject>Tantalum</subject><subject>Tantalum oxides</subject><subject>Thin film transistors</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqdkUtPFTEUxydGEwmy8Bs0caXJYF_TTpeGIJKQsFDXzZk-7u11bju2HQhfhM9r4RJhzVn0nLa__M-r6z4SfEqwYF_J6YAHxaR40x1RMow9o1S8fRG_705K2eFmXBE88qPu_qfbB5OiXU0NcYNKO2bX38I8O4sM5ClFFCGmuk4ORVdvU_7TT1Dar03r1NgNVIfqNsTeh3mPaoZYQqkpF-RTRtuw2faLyy3eQzQOwd_VpbUgs31IDTMqLpYGwrLM7V5DiuVD987DXNzJkz_ufn8__3X2o7-6vrg8-3bVG07H2hOJiR-ddNIzPkjMlFdAhMSGUk6doWLylIyCCWkEYV4JKzlw5b2y1mPKjrvLg65NsNNLDnvIdzpB0I8PKW805BrM7DRmjEtrySCBcOyFEsbxwWLKDXeU46b16aC15NRaLFXv0ppjK19TwihXQuGxUZ8PlMmplOz8_6wE64ctaqKfttjYLwe2mFAfB_M6-CblZ1Av1rN_q9etCg</recordid><startdate>201811</startdate><enddate>201811</enddate><creator>Hong, Eun-Ki</creator><creator>Cho, Won-Ju</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-7198-4129</orcidid></search><sort><creationdate>201811</creationdate><title>Semiconducting single-walled carbon nanotube network-based double-gate thin-film transistors for high-performance aqueous chemical sensor applications</title><author>Hong, Eun-Ki ; Cho, Won-Ju</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-1701f8e7e7f3457039f9a1670c2242ec26bf2186367c613f96d74a49ff9ddf023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Biosensors</topic><topic>Chemical sensors</topic><topic>Drift rate</topic><topic>Field effect transistors</topic><topic>Insulators</topic><topic>Linearity</topic><topic>Organic chemistry</topic><topic>Semiconductor devices</topic><topic>Sensitivity</topic><topic>Sensors</topic><topic>Silicon dioxide</topic><topic>Single wall carbon nanotubes</topic><topic>Tantalum</topic><topic>Tantalum oxides</topic><topic>Thin film transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hong, Eun-Ki</creatorcontrib><creatorcontrib>Cho, Won-Ju</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hong, Eun-Ki</au><au>Cho, Won-Ju</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Semiconducting single-walled carbon nanotube network-based double-gate thin-film transistors for high-performance aqueous chemical sensor applications</atitle><jtitle>AIP advances</jtitle><date>2018-11</date><risdate>2018</risdate><volume>8</volume><issue>11</issue><spage>115312</spage><epage>115312-5</epage><pages>115312-115312-5</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>In this study, we fabricated a highly sensitive separative extended gate chemically modified field effect transistor (SEG-ChemFET) sensor using a semiconducting single-walled carbon nanotube (scSWCNT) network. To improve the stability and sensitivity of the scSWNT channel layer, we fabricated a double-gate structure FET transducer with a passivated channel using top- and bottom-gate insulators and applied a separate sensing membrane. The scSWCNT network channel was formed by solution process. In order to increase the sensitivity, a low-k spin-on-glass (SOG) film and a stacked Ta2O5/SiO2 film were formed as top-gate and engineered bottom-gate insulators, respectively, which improved the coupling ratio. As a result, the fabricated scSWCNT ChemFET sensor exhibited sensitivity of 365.65 mV/pH sensitivity, which is much higher than the Nernst limit (59.5 mV/pH), a linearity of 99.88%, and a drift rate of 72.44 mV/h. Thus, we expect this research to have important applications for high-sensitivity biosensors.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5059376</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-7198-4129</orcidid><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Biosensors Chemical sensors Drift rate Field effect transistors Insulators Linearity Organic chemistry Semiconductor devices Sensitivity Sensors Silicon dioxide Single wall carbon nanotubes Tantalum Tantalum oxides Thin film transistors |
| title | Semiconducting single-walled carbon nanotube network-based double-gate thin-film transistors for high-performance aqueous chemical sensor applications |
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