Nitrogen vacancy center in cubic silicon carbide: A promising qubit in the 1.5 μ m spectral range for photonic quantum networks
We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the E3→A23 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV−center in 3C-SiC has...
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| container_title | Physical review. B |
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| creator | Zargaleh, S. A. Hameau, S. Eble, B. Margaillan, F. von Bardeleben, H. J. Cantin, J. L. Gao, Weibo |
| description | We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the E3→A23 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV−center in 3C-SiC has a ZPL line at 1.468 μm in excellent agreement with theoretical predictions. The ZPL line can be observed up to T=100 K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin S=1 ground state and a spin S=1 excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5μm, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics. |
| doi_str_mv | 10.1103/PhysRevB.98.165203 |
| format | Article |
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A. ; Hameau, S. ; Eble, B. ; Margaillan, F. ; von Bardeleben, H. J. ; Cantin, J. L. ; Gao, Weibo</creator><creatorcontrib>Zargaleh, S. A. ; Hameau, S. ; Eble, B. ; Margaillan, F. ; von Bardeleben, H. J. ; Cantin, J. L. ; Gao, Weibo</creatorcontrib><description>We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the E3→A23 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV−center in 3C-SiC has a ZPL line at 1.468 μm in excellent agreement with theoretical predictions. The ZPL line can be observed up to T=100 K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin S=1 ground state and a spin S=1 excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5μm, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.</description><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.98.165203</identifier><language>eng</language><publisher>College Park: American Physical Society</publisher><subject>Diamonds ; Electron paramagnetic resonance ; Lattice vacancies ; Optical properties ; Photoluminescence ; Photonics ; Polarization (spin alignment) ; Qubits (quantum computing) ; Silicon carbide</subject><ispartof>Physical review. 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These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5μm, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.</description><subject>Diamonds</subject><subject>Electron paramagnetic resonance</subject><subject>Lattice vacancies</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Photonics</subject><subject>Polarization (spin alignment)</subject><subject>Qubits (quantum computing)</subject><subject>Silicon carbide</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNo9kMtKAzEUhoMoWGpfwFXAdWsuM5mJu1q8QVERXQ-ZzEmb2iZtkql054P5DD6TU6quzn_g4zuHH6FzSkaUEn75PN_FF9hej2Q5oiJnhB-hHsuEHEop5PF_zskpGsS4IIRQQWRBZA99PtoU_Awc3iqtnN5hDS5BwNZh3dZW42iXVvtuU6G2DVzhMV4Hv7LRuhnedEjas2kOmI5y_P2FVziuQaegljgoNwNsfMDruU_edbpNq1xqV9hB-vDhPZ6hE6OWEQa_s4_ebm9eJ_fD6dPdw2Q8HWrOsjTkUDBKylpnIHKTGyMFB16YQqqizkvRNCAlb5RRuszAECMaKrWuFaUCmDC8jy4O3u75TQsxVQvfBtedrBjljLGy7AR9xA6UDj7GAKZaB7tSYVdRUu3Lrv7KrmRZHcrmP083duY</recordid><startdate>20181015</startdate><enddate>20181015</enddate><creator>Zargaleh, S. 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L.</creatorcontrib><creatorcontrib>Gao, Weibo</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zargaleh, S. A.</au><au>Hameau, S.</au><au>Eble, B.</au><au>Margaillan, F.</au><au>von Bardeleben, H. J.</au><au>Cantin, J. L.</au><au>Gao, Weibo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nitrogen vacancy center in cubic silicon carbide: A promising qubit in the 1.5 μ m spectral range for photonic quantum networks</atitle><jtitle>Physical review. B</jtitle><date>2018-10-15</date><risdate>2018</risdate><volume>98</volume><issue>16</issue><spage>165203</spage><pages>165203-</pages><artnum>165203</artnum><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>We have investigated the optical properties of the (NV)− center in 3C-SiC to determine the photoluminscence zero phonon line (ZPL) associated with the E3→A23 intracenter transition. Combining electron paramagnetic resonance and photoluminescence spectroscopy, we show that the NV−center in 3C-SiC has a ZPL line at 1.468 μm in excellent agreement with theoretical predictions. The ZPL line can be observed up to T=100 K. The negatively charged NV center in 3C-SiC is the structural isomorphe of the NV center in diamond and has equally a spin S=1 ground state and a spin S=1 excited state, long spin lattice relaxation times and presents optically induced groudstate spin polarization. These properties make it already a strong competitor to the NV center in diamond, but as its optical domain is shifted in the near infrared at 1.5μm, the NV center in 3C-SiC is compatible with quantum photonic networks and silicon based microelectronics.</abstract><cop>College Park</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevB.98.165203</doi></addata></record> |
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| subjects | Diamonds Electron paramagnetic resonance Lattice vacancies Optical properties Photoluminescence Photonics Polarization (spin alignment) Qubits (quantum computing) Silicon carbide |
| title | Nitrogen vacancy center in cubic silicon carbide: A promising qubit in the 1.5 μ m spectral range for photonic quantum networks |
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