Grain growth kinetics and electrical properties of CuO doped SnO^sub 2^-based varistors
Up to now, attempts for developing coarse-grained SnO2-based varistors which exhibit high nonlinearity property at lower voltage have become a challenge without any prominent result because of its unknown grain growth mechanism. In this study, the effect of CuO addition to SnO2-based varistors as a...
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| Veröffentlicht in: | Journal of alloys and compounds 2019-01, Vol.770, p.784 |
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| container_title | Journal of alloys and compounds |
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| creator | Mahmoudi, Pezhman Nemati, Ali Shahraki, Mohammad Maleki |
| description | Up to now, attempts for developing coarse-grained SnO2-based varistors which exhibit high nonlinearity property at lower voltage have become a challenge without any prominent result because of its unknown grain growth mechanism. In this study, the effect of CuO addition to SnO2-based varistors as a grain growth enhancer additive on microstructural development, grain growth kinetics, and electrical properties was investigated. The characterization of grain growth kinetics showed that CuO addition encouraged grain growth and enhanced the grains size as it could be seen in the activation energy which decreased from 594 kJ/mol to 364 kJ/mol. In the samples with a low amount of CuO, the solute drag force is the controlling mechanism of grain growth. By further addition, the mechanism changed to the Sn4+ solution-precipitation in CuO-rich liquid phase. Also, the electrical properties of CuO doped samples showed that they are so promising for low voltage applications. |
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In this study, the effect of CuO addition to SnO2-based varistors as a grain growth enhancer additive on microstructural development, grain growth kinetics, and electrical properties was investigated. The characterization of grain growth kinetics showed that CuO addition encouraged grain growth and enhanced the grains size as it could be seen in the activation energy which decreased from 594 kJ/mol to 364 kJ/mol. In the samples with a low amount of CuO, the solute drag force is the controlling mechanism of grain growth. By further addition, the mechanism changed to the Sn4+ solution-precipitation in CuO-rich liquid phase. 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In this study, the effect of CuO addition to SnO2-based varistors as a grain growth enhancer additive on microstructural development, grain growth kinetics, and electrical properties was investigated. The characterization of grain growth kinetics showed that CuO addition encouraged grain growth and enhanced the grains size as it could be seen in the activation energy which decreased from 594 kJ/mol to 364 kJ/mol. In the samples with a low amount of CuO, the solute drag force is the controlling mechanism of grain growth. By further addition, the mechanism changed to the Sn4+ solution-precipitation in CuO-rich liquid phase. Also, the electrical properties of CuO doped samples showed that they are so promising for low voltage applications.</description><subject>Chemical precipitation</subject><subject>Coarsening</subject><subject>Drag</subject><subject>Electric properties</subject><subject>Electrical properties</subject><subject>Electronic devices</subject><subject>Grain growth</subject><subject>Kinetics</subject><subject>Liquid phases</subject><subject>Low voltage</subject><subject>Tin dioxide</subject><subject>Varistors</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqNjMsOgjAURBujifj4h5u4JqFUsayJjx0LTdxBChQtkhZ7i_6-XfgBLiaTnDOZCQko37NwmyTplARRGu9CzjifkwViF0URTRkNyO1khdJwt-bjHvBUWjpVIwjdgOxl7ayqRQ-DNYO0TkkE00I25tB40MBF5wWOFcRFWAn04C2sQmcsrsisFT3K9a-XZHM8XLNz6K9eo0RXdma02qsypoxyxmKf_1ZfWlBCnA</recordid><startdate>20190105</startdate><enddate>20190105</enddate><creator>Mahmoudi, Pezhman</creator><creator>Nemati, Ali</creator><creator>Shahraki, Mohammad Maleki</creator><general>Elsevier BV</general><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20190105</creationdate><title>Grain growth kinetics and electrical properties of CuO doped SnO^sub 2^-based varistors</title><author>Mahmoudi, Pezhman ; Nemati, Ali ; Shahraki, Mohammad Maleki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_21318332833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Chemical precipitation</topic><topic>Coarsening</topic><topic>Drag</topic><topic>Electric properties</topic><topic>Electrical properties</topic><topic>Electronic devices</topic><topic>Grain growth</topic><topic>Kinetics</topic><topic>Liquid phases</topic><topic>Low voltage</topic><topic>Tin dioxide</topic><topic>Varistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mahmoudi, Pezhman</creatorcontrib><creatorcontrib>Nemati, Ali</creatorcontrib><creatorcontrib>Shahraki, Mohammad Maleki</creatorcontrib><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mahmoudi, Pezhman</au><au>Nemati, Ali</au><au>Shahraki, Mohammad Maleki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Grain growth kinetics and electrical properties of CuO doped SnO^sub 2^-based varistors</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2019-01-05</date><risdate>2019</risdate><volume>770</volume><spage>784</spage><pages>784-</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>Up to now, attempts for developing coarse-grained SnO2-based varistors which exhibit high nonlinearity property at lower voltage have become a challenge without any prominent result because of its unknown grain growth mechanism. In this study, the effect of CuO addition to SnO2-based varistors as a grain growth enhancer additive on microstructural development, grain growth kinetics, and electrical properties was investigated. The characterization of grain growth kinetics showed that CuO addition encouraged grain growth and enhanced the grains size as it could be seen in the activation energy which decreased from 594 kJ/mol to 364 kJ/mol. In the samples with a low amount of CuO, the solute drag force is the controlling mechanism of grain growth. By further addition, the mechanism changed to the Sn4+ solution-precipitation in CuO-rich liquid phase. Also, the electrical properties of CuO doped samples showed that they are so promising for low voltage applications.</abstract><cop>Lausanne</cop><pub>Elsevier BV</pub></addata></record> |
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| ispartof | Journal of alloys and compounds, 2019-01, Vol.770, p.784 |
| issn | 0925-8388 1873-4669 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Chemical precipitation Coarsening Drag Electric properties Electrical properties Electronic devices Grain growth Kinetics Liquid phases Low voltage Tin dioxide Varistors |
| title | Grain growth kinetics and electrical properties of CuO doped SnO^sub 2^-based varistors |
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