A 0.4-to-4-GHz All-Digital RF Transmitter Package With a Band-Selecting Interposer Combining Three Wideband CMOS Transmitters

A single-output, band selecting interposer is designed to combine three identical all-digital CMOS transmitter (Tx) chips. The open-drain CMOS Txs are flip-chip connected to the primary windings of three frequency selecting transformers realized on a single PCB interposer. The secondary windings of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on microwave theory and techniques 2018-11, Vol.66 (11), p.4967-4984
Hauptverfasser: Kuo, Nai-Chung, Yang, Bonjern, Wang, Angie, Kong, Lingkai, Wu, Charles, Srini, Vason P., Alon, Elad, Nikolic, Borivoje, Niknejad, Ali M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 4984
container_issue 11
container_start_page 4967
container_title IEEE transactions on microwave theory and techniques
container_volume 66
creator Kuo, Nai-Chung
Yang, Bonjern
Wang, Angie
Kong, Lingkai
Wu, Charles
Srini, Vason P.
Alon, Elad
Nikolic, Borivoje
Niknejad, Ali M.
description A single-output, band selecting interposer is designed to combine three identical all-digital CMOS transmitter (Tx) chips. The open-drain CMOS Txs are flip-chip connected to the primary windings of three frequency selecting transformers realized on a single PCB interposer. The secondary windings of the three transformers are connected in series and they share a single output. Across 0.4 to 4 GHz, a peak power higher than 22.9 dBm is achieved collectively by the three sub-Txs with a drain efficiency (DE) better than 25%. The peak powers/DE of the three sub-Txs are 28.6 dBm/50%, 27.4 dBm/49%, and 24.7 dBm/34%, at 0.85, 2.1, and 3 GHz, respectively. This paper further demonstrates that the band selection can be achieved via reconfiguring the CMOS inverse Class-D switching power amplifiers. As demonstrated via continuous wave and 64-quadratic-amplitude modulation, WLAN, and LTE modulation tests, the reconfigurable Tx package exhibits high power and efficiency across all supported bands.
doi_str_mv 10.1109/TMTT.2018.2860007
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2130611562</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8434250</ieee_id><sourcerecordid>2130611562</sourcerecordid><originalsourceid>FETCH-LOGICAL-c245t-ebbbdb7c6847caeeeccc9d19ab840b56677cf1798abba4cddee6a3e68ee14a883</originalsourceid><addsrcrecordid>eNpNkM1OwzAQhC0EEqXwAIiLJc4OduI4zrEU-iO1KqJBHCPb2bYpaVLs9AAS746jVojTane_mV0NQreMBozR9CGbZ1kQUiaDUApKaXKGeiyOE5KKhJ6jHvUrknJJL9GVc1vf8pjKHvoZYBpw0jaEk_HkGw-qijyV67JVFX4d4cyq2u3KtgWLX5T5UGvA72W7wQo_qrogS6jAtGW9xtPaM_vGeXDY7HRZd8NsY6ETFKA9jYfzxfK_pbtGFytVObg51T56Gz1nwwmZLcbT4WBGTMjjloDWutCJEZInRgGAMSYtWKq05FTHQiSJWbEklUprxU1RAAgVgZAAjCspoz66P_rubfN5ANfm2-Zga38yD1lEBWOxCD3FjpSxjXMWVvneljtlv3JG8y7lvEs571LOTyl7zd1RU_q3_njJIx7GNPoFZJl5aA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2130611562</pqid></control><display><type>article</type><title>A 0.4-to-4-GHz All-Digital RF Transmitter Package With a Band-Selecting Interposer Combining Three Wideband CMOS Transmitters</title><source>IEEE Xplore</source><creator>Kuo, Nai-Chung ; Yang, Bonjern ; Wang, Angie ; Kong, Lingkai ; Wu, Charles ; Srini, Vason P. ; Alon, Elad ; Nikolic, Borivoje ; Niknejad, Ali M.</creator><creatorcontrib>Kuo, Nai-Chung ; Yang, Bonjern ; Wang, Angie ; Kong, Lingkai ; Wu, Charles ; Srini, Vason P. ; Alon, Elad ; Nikolic, Borivoje ; Niknejad, Ali M.</creatorcontrib><description>A single-output, band selecting interposer is designed to combine three identical all-digital CMOS transmitter (Tx) chips. The open-drain CMOS Txs are flip-chip connected to the primary windings of three frequency selecting transformers realized on a single PCB interposer. The secondary windings of the three transformers are connected in series and they share a single output. Across 0.4 to 4 GHz, a peak power higher than 22.9 dBm is achieved collectively by the three sub-Txs with a drain efficiency (DE) better than 25%. The peak powers/DE of the three sub-Txs are 28.6 dBm/50%, 27.4 dBm/49%, and 24.7 dBm/34%, at 0.85, 2.1, and 3 GHz, respectively. This paper further demonstrates that the band selection can be achieved via reconfiguring the CMOS inverse Class-D switching power amplifiers. As demonstrated via continuous wave and 64-quadratic-amplitude modulation, WLAN, and LTE modulation tests, the reconfigurable Tx package exhibits high power and efficiency across all supported bands.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2018.2860007</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amplitude modulation ; Broadband ; Capacitors ; Carrier aggregation ; CMOS ; CMOS power amplifier (PA) ; Coils (windings) ; Continuous radiation ; Impedance ; index terms ; interposer ; Local area networks ; multiband ; polar transmitter ; Power amplifiers ; Power efficiency ; RF-DAC ; Switches ; transformer ; Transformers ; Transmitters ; Wideband ; Windings ; Wireless networks</subject><ispartof>IEEE transactions on microwave theory and techniques, 2018-11, Vol.66 (11), p.4967-4984</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-ebbbdb7c6847caeeeccc9d19ab840b56677cf1798abba4cddee6a3e68ee14a883</cites><orcidid>0000-0002-9246-9791 ; 0000-0002-3723-1959 ; 0000-0003-0627-0020 ; 0000-0003-2324-1715</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8434250$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8434250$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kuo, Nai-Chung</creatorcontrib><creatorcontrib>Yang, Bonjern</creatorcontrib><creatorcontrib>Wang, Angie</creatorcontrib><creatorcontrib>Kong, Lingkai</creatorcontrib><creatorcontrib>Wu, Charles</creatorcontrib><creatorcontrib>Srini, Vason P.</creatorcontrib><creatorcontrib>Alon, Elad</creatorcontrib><creatorcontrib>Nikolic, Borivoje</creatorcontrib><creatorcontrib>Niknejad, Ali M.</creatorcontrib><title>A 0.4-to-4-GHz All-Digital RF Transmitter Package With a Band-Selecting Interposer Combining Three Wideband CMOS Transmitters</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>A single-output, band selecting interposer is designed to combine three identical all-digital CMOS transmitter (Tx) chips. The open-drain CMOS Txs are flip-chip connected to the primary windings of three frequency selecting transformers realized on a single PCB interposer. The secondary windings of the three transformers are connected in series and they share a single output. Across 0.4 to 4 GHz, a peak power higher than 22.9 dBm is achieved collectively by the three sub-Txs with a drain efficiency (DE) better than 25%. The peak powers/DE of the three sub-Txs are 28.6 dBm/50%, 27.4 dBm/49%, and 24.7 dBm/34%, at 0.85, 2.1, and 3 GHz, respectively. This paper further demonstrates that the band selection can be achieved via reconfiguring the CMOS inverse Class-D switching power amplifiers. As demonstrated via continuous wave and 64-quadratic-amplitude modulation, WLAN, and LTE modulation tests, the reconfigurable Tx package exhibits high power and efficiency across all supported bands.</description><subject>Amplitude modulation</subject><subject>Broadband</subject><subject>Capacitors</subject><subject>Carrier aggregation</subject><subject>CMOS</subject><subject>CMOS power amplifier (PA)</subject><subject>Coils (windings)</subject><subject>Continuous radiation</subject><subject>Impedance</subject><subject>index terms</subject><subject>interposer</subject><subject>Local area networks</subject><subject>multiband</subject><subject>polar transmitter</subject><subject>Power amplifiers</subject><subject>Power efficiency</subject><subject>RF-DAC</subject><subject>Switches</subject><subject>transformer</subject><subject>Transformers</subject><subject>Transmitters</subject><subject>Wideband</subject><subject>Windings</subject><subject>Wireless networks</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkM1OwzAQhC0EEqXwAIiLJc4OduI4zrEU-iO1KqJBHCPb2bYpaVLs9AAS746jVojTane_mV0NQreMBozR9CGbZ1kQUiaDUApKaXKGeiyOE5KKhJ6jHvUrknJJL9GVc1vf8pjKHvoZYBpw0jaEk_HkGw-qijyV67JVFX4d4cyq2u3KtgWLX5T5UGvA72W7wQo_qrogS6jAtGW9xtPaM_vGeXDY7HRZd8NsY6ETFKA9jYfzxfK_pbtGFytVObg51T56Gz1nwwmZLcbT4WBGTMjjloDWutCJEZInRgGAMSYtWKq05FTHQiSJWbEklUprxU1RAAgVgZAAjCspoz66P_rubfN5ANfm2-Zga38yD1lEBWOxCD3FjpSxjXMWVvneljtlv3JG8y7lvEs571LOTyl7zd1RU_q3_njJIx7GNPoFZJl5aA</recordid><startdate>20181101</startdate><enddate>20181101</enddate><creator>Kuo, Nai-Chung</creator><creator>Yang, Bonjern</creator><creator>Wang, Angie</creator><creator>Kong, Lingkai</creator><creator>Wu, Charles</creator><creator>Srini, Vason P.</creator><creator>Alon, Elad</creator><creator>Nikolic, Borivoje</creator><creator>Niknejad, Ali M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9246-9791</orcidid><orcidid>https://orcid.org/0000-0002-3723-1959</orcidid><orcidid>https://orcid.org/0000-0003-0627-0020</orcidid><orcidid>https://orcid.org/0000-0003-2324-1715</orcidid></search><sort><creationdate>20181101</creationdate><title>A 0.4-to-4-GHz All-Digital RF Transmitter Package With a Band-Selecting Interposer Combining Three Wideband CMOS Transmitters</title><author>Kuo, Nai-Chung ; Yang, Bonjern ; Wang, Angie ; Kong, Lingkai ; Wu, Charles ; Srini, Vason P. ; Alon, Elad ; Nikolic, Borivoje ; Niknejad, Ali M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-ebbbdb7c6847caeeeccc9d19ab840b56677cf1798abba4cddee6a3e68ee14a883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Amplitude modulation</topic><topic>Broadband</topic><topic>Capacitors</topic><topic>Carrier aggregation</topic><topic>CMOS</topic><topic>CMOS power amplifier (PA)</topic><topic>Coils (windings)</topic><topic>Continuous radiation</topic><topic>Impedance</topic><topic>index terms</topic><topic>interposer</topic><topic>Local area networks</topic><topic>multiband</topic><topic>polar transmitter</topic><topic>Power amplifiers</topic><topic>Power efficiency</topic><topic>RF-DAC</topic><topic>Switches</topic><topic>transformer</topic><topic>Transformers</topic><topic>Transmitters</topic><topic>Wideband</topic><topic>Windings</topic><topic>Wireless networks</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuo, Nai-Chung</creatorcontrib><creatorcontrib>Yang, Bonjern</creatorcontrib><creatorcontrib>Wang, Angie</creatorcontrib><creatorcontrib>Kong, Lingkai</creatorcontrib><creatorcontrib>Wu, Charles</creatorcontrib><creatorcontrib>Srini, Vason P.</creatorcontrib><creatorcontrib>Alon, Elad</creatorcontrib><creatorcontrib>Nikolic, Borivoje</creatorcontrib><creatorcontrib>Niknejad, Ali M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuo, Nai-Chung</au><au>Yang, Bonjern</au><au>Wang, Angie</au><au>Kong, Lingkai</au><au>Wu, Charles</au><au>Srini, Vason P.</au><au>Alon, Elad</au><au>Nikolic, Borivoje</au><au>Niknejad, Ali M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 0.4-to-4-GHz All-Digital RF Transmitter Package With a Band-Selecting Interposer Combining Three Wideband CMOS Transmitters</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2018-11-01</date><risdate>2018</risdate><volume>66</volume><issue>11</issue><spage>4967</spage><epage>4984</epage><pages>4967-4984</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A single-output, band selecting interposer is designed to combine three identical all-digital CMOS transmitter (Tx) chips. The open-drain CMOS Txs are flip-chip connected to the primary windings of three frequency selecting transformers realized on a single PCB interposer. The secondary windings of the three transformers are connected in series and they share a single output. Across 0.4 to 4 GHz, a peak power higher than 22.9 dBm is achieved collectively by the three sub-Txs with a drain efficiency (DE) better than 25%. The peak powers/DE of the three sub-Txs are 28.6 dBm/50%, 27.4 dBm/49%, and 24.7 dBm/34%, at 0.85, 2.1, and 3 GHz, respectively. This paper further demonstrates that the band selection can be achieved via reconfiguring the CMOS inverse Class-D switching power amplifiers. As demonstrated via continuous wave and 64-quadratic-amplitude modulation, WLAN, and LTE modulation tests, the reconfigurable Tx package exhibits high power and efficiency across all supported bands.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2018.2860007</doi><tpages>18</tpages><orcidid>https://orcid.org/0000-0002-9246-9791</orcidid><orcidid>https://orcid.org/0000-0002-3723-1959</orcidid><orcidid>https://orcid.org/0000-0003-0627-0020</orcidid><orcidid>https://orcid.org/0000-0003-2324-1715</orcidid></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0018-9480
ispartof IEEE transactions on microwave theory and techniques, 2018-11, Vol.66 (11), p.4967-4984
issn 0018-9480
1557-9670
language eng
recordid cdi_proquest_journals_2130611562
source IEEE Xplore
subjects Amplitude modulation
Broadband
Capacitors
Carrier aggregation
CMOS
CMOS power amplifier (PA)
Coils (windings)
Continuous radiation
Impedance
index terms
interposer
Local area networks
multiband
polar transmitter
Power amplifiers
Power efficiency
RF-DAC
Switches
transformer
Transformers
Transmitters
Wideband
Windings
Wireless networks
title A 0.4-to-4-GHz All-Digital RF Transmitter Package With a Band-Selecting Interposer Combining Three Wideband CMOS Transmitters
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T09%3A46%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%200.4-to-4-GHz%20All-Digital%20RF%20Transmitter%20Package%20With%20a%20Band-Selecting%20Interposer%20Combining%20Three%20Wideband%20CMOS%20Transmitters&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Kuo,%20Nai-Chung&rft.date=2018-11-01&rft.volume=66&rft.issue=11&rft.spage=4967&rft.epage=4984&rft.pages=4967-4984&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2018.2860007&rft_dat=%3Cproquest_RIE%3E2130611562%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2130611562&rft_id=info:pmid/&rft_ieee_id=8434250&rfr_iscdi=true