Room-temperature photoluminescence lifetime for the near-band-edge emission of (000 1 ¯ ) p-type GaN fabricated by sequential ion-implantation of Mg and H

Photoluminescence (PL) spectra of (000 1 ¯ ) N-polar p-type GaN fabricated by using the sequential ion-implantation of Mg and H with subsequent high temperature annealing exhibited the near-band-edge (NBE) emission at 300 K. The longest PL lifetime ( τ PL ) for the NBE emission of the sample with Mg...

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Veröffentlicht in:	Applied physics letters 2018-11, Vol.113 (19)
Hauptverfasser:	Shima, K., Iguchi, H., Narita, T., Kataoka, K., Kojima, K., Uedono, A., Chichibu, S. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption cross sections Annealing Applied physics Beta decay Clustering Defects Divacancies Electron capture Ion implantation Magnesium Photoluminescence Positron annihilation Room temperature Spectrum analysis Vacancies
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